硫化锌掺钴对电子结构和光学性质的影响

根据密度泛函理论对钴掺硫化锌周围的品格进行了结构优化,计算得到了钴杂质周围的晶体结构、电子态密度分布和吸收光谱.计算结果表明,由于Co原子掺入ZnS晶格常数减小,导致晶格畸变;带隙变窄;吸收峰展宽至更长波长区域.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

混合序列加权和的完全收敛性和强收敛性

讨论了 ρ混合序列加权和的完全收敛性和强收敛性 ,推广了Stout和Thrum定理     

关于区间图的一些有效并行算法

本文基于SIMD-CREW-PRAM一种可同时读但不可同时写的共享计算模型,给出了有关区间图的一些有效的并行算法。如找最大加权集团,最小集团覆盖,等权区间图的最大独立集及最小支配集,真区间图的哈密顿回路及最小带宽。所有这些算法都是最优的,其时间复杂性为O(logn)和处理器数为O(n)。     

Theory and Application of Characteristic Finite Element Domain Decomposition Procedures for Coupled System of Dynamics of Fluids in Porous Media

For a coupled system of multiplayer dynamics of fluids in porous media,the characteristic finiteelement domain decomposition procedures applicable to parallel arithmetic are put forward.Techniques suchas calculus of variations,domain decomposition,characteristic method,negative norm estimate,energy methodand the theory of prior estimates are adopted.Optimal order estimates in L~2 norm are derived for the error inthe approximate solution.     

荧光XAFS研究Si可稀浓度杂质的区域结构

荧光ＸＡＦＳ研究Ｓｉ晶体中等电子，缺电子和富电子杂质原子的区域环境结构。结果表明杂质原子的电子构型决定了杂质原子对Ｓｉ区域晶格形变的影响。相对于共价键长ＲＳｉ－Ｓｉ（０．２４０ｎｍ）来说，富电子杂质Ａｓ导致Ｓｉ晶格在Ｓｉ（１１１）方向的ＲＡｓ－Ｓｉ键长产生０．００４ｎｍ的反应增长，等电子杂质Ｇｅ的Ｒ－Ｇｒｅ－Ｓｉ和缺电子杂质Ｇａ和ＲＧａ－Ｓｉ键长收缩０．００２ｎｍ。     

线性时滞系统实用稳定性的一个简明判据

利用比较的方法，获得了线性时滞系统实用稳定性的一个简单判定定理．     

氧化苯乙烯和氧化二苯乙烯的区域选择性和立体选择性开环

本文报道 NaBH_4-CoCl_2可使氧化苯乙烯类化合物发生区域选择性开环,主要生成β-苯乙醇衍生物。对于氧化二苯乙烯类化合物,由于受到苯环的空间阻碍,使其开环能力减弱,如反式氧化二苯乙烯比顺式异构体更难于开环。