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51.
Phonon effects in tunnelling through a double quantum dot molecule are investigated by use of a recently developed technique, which is based on an exact mapping of a many-body electron-phonon interaction problem onto a multichannel one-body problem. The molecule is sandwiched between two ideal electrodes and the electron at each dot of the molecule interacts independently with Einstein phonons. Single-electron transmission rates through the molecule are computed and the nonlinear spectrum obtained shows a structure with many more satellite peaks due to the excitations of phonons. The strength of resonant peaks is found to be strongly dependent on the number of excited phonons. The effects of electron-phonon interaction on the current and shot noise, depending on the voltage bias applied at the two electrodes as well as the potential energy of the molecule, are discussed.  相似文献   
52.
Second-harmonic generation (SHG)-based nonlinear optical microscopy is used for spatially resolved imaging of the polarization switching in lead zirconium titanate ferroelectric thin films. The local SHG hysteresis loops reveal a strong dependence on film composition and structure. The SHG microscopy results are in good agreement with the efficiency of electrostatic force microscopy writing and allow us to predict the microscopic dielectric memory efficiency, both in contact and contact-less ways. Received: 15 January 2001 / Revised version: 27 March 2002 / Published online: 6 June 2002  相似文献   
53.
The generation of harmonics of the voltage response is considered when an AC current is applied through a superconducting film above Tc. It is shown that almost at all temperatures the mechanism of the temperature oscillations created by the AC current and the temperature dependence of the resistance dominates over the isothermal nonlinear electric conductivity. Only in a narrow critical region close to Tc the latter is essential for the generation of the harmonics. A detailed investigation of harmonics generation provides an accurate method for measuring the thermal boundary conductance between the film and the insulating substrate. The critical behaviour of the third harmonic will give a new method for the determination of the lifetime of metastable Cooper pairs above Tc. The comparison of the calculated fifth harmonics of the voltage with the experiment is proposed as an important test for the applicability of the employed theoretical models. Received 8 September 2001  相似文献   
54.
Deconvolution of the IR absorption spectrum of -D glucose in the spectral range 1500–450 cm–1 has been carried out. The results of the deconvolution were compared with the IR and Raman spectra recorded at room and low temperatures and with the data obtained by theoretical calculations for the frequencies of the normal vibrations of the -D glucose molecule in the crystalline state. It is shown that deconvolution of the IR spectra recorded at room temperature makes it possible to separate the bands observed experimentally only at a very low temperature of the sample and a number of components that were not resolved earlier. The number of bands separated on deconvolution of the IR spectra of -D glucose in the spectral range 1500–450 cm–1 is more than twice the number of visible absorption maxima in the usual spectrum. The results of deconvolution of the IR spectrum of -D glucose are in good agreement with the data of theoretical calculations for the frequencies of the normal vibrations of the -D glucose molecule in the crystalline state. The existence of the factor-group (Davydov) splitting of a number of frequencies of the nondegenerate fundamental vibrations of molecules in a crystal cell has been revealed in the IR spectrum of -D glucose. It was concluded that the model of an isolated molecule is insufficient for detailed theoretical interpretation of the vibrational spectra of carbohydrates.  相似文献   
55.
This paper presents a rationale for comparative use of length fraction and number fraction statistics in grain boundary analysis from orientation maps generated by electron back-scatter diffraction (EBSD). The length and number fraction statistics for 3 n coincidence site lattice (CSL) boundaries were measured and compared. The length fraction of 3 boundaries was 0.48 whereas the number fraction was significantly less, 0.36. A simple model was generated to estimate both the length fraction and number fraction of annealing twins (a subset of 3). The model showed that the number fraction of twins is 0.68, 0.75, 0.79 and 0.82 of the length fraction for 1, 2, 3 and 4 twins-per-grain respectively. For the experimental data the number fraction was 0.76 of the length fraction, implying that there were on average two twins-per-grain. In contrast to the 3 case, the length fraction for 9 and 27 boundaries was less than the number fraction. There are more inaccuracies involved in obtaining the number fraction than in obtaining the length fraction from EBSD maps, therefore the length fraction should be recommended as the standard reporting method. However a knowledge of the distribution in the microstructure of 3 n segments is often crucial to the inquiry in addition to the length fraction.  相似文献   
56.
Bound state pion production in40Ca and120Sn nuclei in (p,2p) and (n,d) reactions is investigated. The differential and total cross sections have been obtained. It is shown that the cross sections are determined by the overlap function of the bound states of the nucleon and pion, and as consequence,s-wave part of the pion-nucleus optical potential. The contributions from the nucleons and deuteron distortions are evaluated.The authors would like to express their gratitude to R.A. Eramzhyan, S.N. Gninenko, V.B. Kopeliovich, V.M. Lobashev, B.B. Matveev and E. Oset for very useful and stimulating discussions.  相似文献   
57.
SrBi2Ta2O9 (SBT) thin films were prepared on p-type Si(100) substrates with Al2O3 buffer layers. Both the SBT films and the Al2O3 buffer layers were deposited by a pulsed laser deposition technique using a KrF excimer laser. An Al prelayer was used to prevent Si surface oxidization in the initial growth stage. It is shown that Al2O3 buffer layers effectively prevented interdiffusion between SBT and Si substrates. Furthermore, the capacitance–voltage (C-V) characteristics of the SBT/Al2O3/Si heterostructures show a hysteresis loop with a clockwise trace, demonstrating the ferroelectric switching properties of SBT films and showing a memory window of 1.6 V at 1 MHz. Received: 17 July 2000 / Accepted: 16 August 2000 / Published online: 30 November 2000  相似文献   
58.
A dynamical percolative model explaining the universality of 1/ f γ noise is reported. Exponents γ ranging from 0 to 2 are obtained under the hypothesis that noise originates from random switching events between two ON-OFF states in elemental parts (switchers) of a physical system. The usual noise behaviour with γ very close to 1 in an arbitrarily wide frequency range is obtained assuming a statistical distribution of switcher relaxation time τ proportional to τ -1 , as in McWhorter's model. The impact of these results with respect to recent self-organised criticality models is discussed. Received 6 November 2000 and Received in final form 22 May 2001  相似文献   
59.
A new type of hydrodynamic bearing is presented. Instead of physically forming a wedged space by two plates, the bearing consists of two parallel plates, with regions of different wettability on one of the surfaces. With the introduction of such a wettability-patterned surface, the hydrodynamic pressure can be built up because the local slip length over different regions in the bearing is different and results in similar velocity profiles to that in a traditional wedged bearing. Molecular dynamics simulation results indicate that the hydrodynamic pressure is proportional to the shear velocity. However, as the shear velocity exceeds a critical value, the slip length becomes infinite and the hydrodynamic bearing loses its function.  相似文献   
60.
Using the hydrodynamic model of a semiconductor plasma, the influence of carrier heating on the parametric dispersion and amplification has been analytically investigated in a doped III-V semiconductor, viz. n-InSb. The origin of the phenomena lies in the effective second-order optical susceptibility (χe(2)) arising due to the induced nonlinear current density of the medium. Using the coupled-mode theory, the threshold value of pump electric field (|E0T|para) and parametric gain coefficient (αpara) are obtained via χe(2). The relevant experiment has not been performed. Proper selection of the doping level not only lowers |E0T|para required for the onset of parametric excitation but also enhances αpara. The carrier heating induced by the intense pump modifies the electron collision frequency and hence the nonlinearity of the medium, which in turn further lowers |E0T|para and enhances αpara by a factor of ∼103 and ∼2×102, respectively. The results strongly suggest that the incorporation of carrier heating by the pump in the analysis leads to a better understanding of parametric processes in solids and gaseous plasmas, which can be of great use in the generation of squeezed states.  相似文献   
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