Reaction mechanism and rate constants of the CH+CH4 reaction: a theoretical study

Ab initio and density functional calculations have been performed to elucidate the mechanism of CH radical insertion into methane. The results show that the reaction can be viewed to occur via two stages. On the first stage, the CH radical approaches methane without large structural changes to acquire proper positioning for the subsequent stage, where H-migration occurs from CH₄ to CH, along with a C–C bond formation. Where the first stage ends and the second begins, a tight transition state was located using the B3LYP/6-311G(d,p) and MP4(SDQ)/6-311++G(d,p) methods. Using a rigid rotor – harmonic oscillator approach within transition state theory, we show that at the MP5/6-311++G(d,p)//MP4(SDQ)/6-311++G(d,p) level the calculated rate constants are in a reasonably good agreement with experiment in a broad temperature range of 145–581 K. Even at low temperatures, the insertion reaction bottleneck is found about the location of the tight transition state, rather than at long separations between the CH and CH₄ reactants. In addition, high level CCSD(T)-F12/CBS calculations of the remainder of the C₂H₅ potential energy surface predict the CH+CH₄ reaction to proceed via the initial insertion step to the ethyl radical which then can emit a hydrogen atom to form highly exothermic C₂H₄+H products.     

基于粗糙集理论的知识约简及应用实例

在保持分类能力不变的前提下 ,通过利用粗糙集理论中的知识约简方法 ,在保护知识库分类不变的条件下 ,删除其中不相关或不重要的知识 ,从而导出问题的决策 .利用基于决策表的粗糙集模型算法 ,实例分析如何数字化表示决策表 ,并对其进行属性约简和属性值的约简 ,从而提取决策规则 .     

风险企业的委托-代理模型

传统的委托—代理理论在解释风险企业家的行为时遇到了困难。通过对传统的委托—代理理论进行重新构造和拓展，本提出逆反努力法则，验证了隐藏行动的道德风险的存在，并通过Newton迭代法和图形学方法对风险企业家的长期努力水平进行计算，发现努力水平对努力效应指数n表现出协同效应。     

拓扑学在模型论中的一个应用

本文利用拓扑学方法研究了ω-范畴理论的性质，并对模型个数问题进行了讨论，获得了ω-范畴的新结果，并得到了关于模型个数的几个结果．     

N2H4在NiFe(111)合金表面吸附稳定性和电子结构的第一性原理研究

采用基于色散校正的密度泛函理论进行了第一性原理研究, 详细分析了肼(N₂H₄)在Ni₈Fe₈/Ni(111)合金表面稳定吸附构型的吸附稳定性和电子结构及成键性质. 通过比较发现, 肼分子以桥接方式吸附在表面的两个Fe原子上是最稳定的吸附构型, 其吸附能为-1.578 eV/N₂H₄. 同时发现, 肼分子在这一表面上吸附稳定性的趋势为: 桥位比顶位吸附更有利, 且在Fe原子上比在Ni原子上的吸附作用更强. 进一步分析了不同吸附位点上稳定吸附构型的电子结构、电荷密度转移以及电子局域化情况. 结果发现: 相同吸附位点的电子态密度图基本一致, 并且N原子的p轨道和与之相互作用的表面原子的d轨道之间存在态密度上的重叠; 吸附后电荷密度则主要从肼分子转移到表面原子之上; 在电子局域化函数切面图中也发现吸附后电子被局域到肼分子的N原子和相邻的表面原子之间. 这些电子结构的表征都充分说明肼分子与表面原子之间通过电荷转移形成了强烈的配位共价作用.     

Generalized hyperelliptic surfaces

This article presents some results on the surfaces of general type whose Albanese morphism is a holomorphic fibre bundle.

     

of Hamiltonian manifolds

Let be a connected, compact symplectic manifold equipped with a Hamiltonian action. We prove that, as fundamental groups of topological spaces, , where is the symplectic quotient at any value in the image of the moment map .

     

Hard-sphere binary-collision operators

The time displacement operator is described for a system of hard-sphere particles. We show how to avoid needing a representation for this operator in unphysical regions of phase space, and how to construct a useful representation in terms of binary collision operators in the physical region. The various binary collision operators used for hard-sphere systems are derived for the case of a system of two spheres, and the results are generalized toN-particle systems.Dedicated to Prof. E. G. D. Cohen on the occasion of his 65th birthday.     

LocalH-theorem for a kinetic variational theory

A localH-theorem is derived for a recently proposed extension of Enskog kinetic theory to a dense model fluid composed of particles with interactions extending beyond a hard core.On leave from: Katedra Fizyki, Uniwersytetu Szczecinskiego, 70-451 Szczecin, Poland.     

An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO

P-type conductivity in MOCVD grown ZnO was obtained by directional thermal diffusion of arsenic from semi-insulating GaAs substrate. The films were single crystalline in nature and oriented along (002) direction. Ab initio calculations in the framework of density functional theory have been carried out with different chemical states of arsenic in ZnO. Present calculations suggested As_Zn–2V_Zn defect is a shallow acceptor and results in ferromagnetism in ZnO. The magnetic measurements of the samples indeed showed ferromagnetic ordering at room temperature. X-ray photoelectron spectra confirmed the presence of As_Zn and V_Zn. The core level chemical shift in binding energy of As_Zn indicated the formation of As_Zn–2V_Zn. Diffused arsenic substitutes zinc atom and creates additional zinc vacancies. The zinc vacancies, surrounding the oxygen atoms, result in unpaired O 2p electrons which in turn induce ferromagnetism in the samples.