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土石混合体在我国分布广泛且力学性质差异极大,研究其单轴压缩特性的影响因素至关重要。借助量纲分析,阐明了土石混合体单轴压缩特性与各影响因素间的无量纲关系。提出了一种块石随机生成技术,可产生指定级配的随机块石系统。借助连续-非连续数值模拟方法CDEM(Continuum Discontinuum Element Method),探讨了具有一定结构性的脆性土石混合体材料的宏观力学特性及其影响规律,并重点分析了该类土石混合体的含石量、土石交界面强度与其宏观本构曲线、单轴抗压强度以及破坏模式的对应关系。研究结果表明,随着含石量的增加,脆性土石混合体的宏观单轴抗压强度迅速减小,含石量超过15%之后,单轴抗压强度基本不变。相同含石量及块石分布的情况下,随着交界面比强度的增大,宏观单轴抗压强度逐渐增大;当交界面比强度大于20时,单轴抗压强度基本不变;当交界面比强度小于1时,主要出现贯穿整个试样的裂缝;当交界面比强度大于1时,主要在试样中上部出现局部的压剪破碎。 相似文献
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小尺寸单轴应变Si p型金属氧化物半导体(PMOS)沟道反型层迁移率与晶面/晶向密切相关,应变PMOS优化设计时应合理选择沟道的晶面/晶向.目前,文献已有1.5 GPa应力强度下单轴应变Si PMOS沟道反型层迁移率按晶面/晶向排序的理论模型.然而,在器件实际制造过程中,覆盖SiN应力膜工艺是固定的,由于沟道弹性劲度系数具有各向异性,这样,不同晶面/晶向应变PMOS沟道所受应力强度不同,进而导致在实际工艺下沟道反型层迁移率晶面/晶向排序理论模型"失效".针对该问题,本文采用中国科学院微电子研究所40 nm工艺流程制备了不同晶面/晶向40 nm沟道小尺寸单轴应变Si PMOS与未应变Si PMOS,并通过器件转移特性测试,获得了小尺寸单轴应变Si PMOS反型层迁移率晶面/晶向排序结论.此有关小尺寸单轴应变Si PMOS沟道反型层迁移率晶面/晶向排序的相关结论,由于考虑了工艺实现因素,与文献理论预测排序结果相比,更适于指导实际器件制造;相关分析方法也可为其他应变材料沟道MOS相关问题的解决提供重要技术参考. 相似文献
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An orthotropic constitutive relationship with temperature parameters for plain highstrength high-performance concrete (HSHPC) under biaxial compression is developed. It is based on the experiments performed for characterizing the strength and deformation behavior at two strength levels of HSHPC at 7 different stress ratios including a=σs : σ3=0.00:-1,-0.20:-1,-0.30 : -1,-0.40:-1,-0.50:-1,-0.75:-1,-1.00:-1, after the exposure to normal and high temperatures of 20, 200, 300, 400, 500 and 600℃, and using a large static-dynamic true triaxial machine. The biaxial tests were performed on 100 mm×100 mm×100 mm cubic specimens, and friction-reducing pads were used consisting of three layers of plastic membrane with glycerine in-between for the compressive loading plane. Based on the experimental results, failure modes of HSHPC specimens were described. The principal static compressive strengths, strains at the peak stress and stress-strain curves were measured; and the influence of the temperature and stress ratios on them was also analyzed. The experimental results showed that the uniaxial compressive strength of plain HSHPC after exposure to high temperatures does not decrease dramatically with the increase of temperature. The ratio of the biaxial to its uniaxial compressive strength depends on the stress ratios and brittleness-stiffness of HSHPC after exposure to different temperature levels. Comparison of the stress-strain results obtained from the theoretical model and the experimental data indicates good agreement. 相似文献
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J. Hanuza M. Maczka M. Gasior‐Gogowska M. Komorowska M. Kobielarz R. Bdziski S. Szotek K. Maksymowicz K. Hermanowicz 《Journal of Raman spectroscopy : JRS》2010,41(10):1163-1169
The combination of Fourier transform‐Raman spectroscopy and uniaxial tensile tests (in MTS Synergie 100 testing machine) was used to investigate microstructural changes in the secondary protein structure of the aortic wall under different levels of stress. The spectroscopic analysis clearly shows differing tension thresholds for material excised in two directions: circumferential and longitudinal. This is confirmed by the results of macroscopic mechanical analyses. The application of strain does not lead to any noticeable change in the bandwidths of the Raman bands. The stress‐controlled Raman band analysis shows that the modes at 938 cm−1 assigned as Cα C of the α‐helix, 1660 cm−1 amide I (the unordered structure of elastin) and 1668 cm−1 amide I (the collagen triple helix) undergo wavenumber shifting, but the bands at 1004 cm−1 assigned to the phenyl ring breathing mode and 2940 cm−1 to the ν (CH3) and ν (CH2) modes are not affected during the elastic behaviour. A clear correlation between Raman band shifting and the level of mechanical stress has been established. Elastin alone participates in the transmission of low stresses in the circumferential direction, whereas both elastin and collagen take part in the transmission of physiological and higher stresses. Copyright © 2009 John Wiley & Sons, Ltd. 相似文献