Molecular electronics: Scanning tunneling microscopy and single-molecule devices

Among switchable molecules, spin-crossover molecules are particularly appealing for molecular electronics as their change in spin state is associated with a large change in conductance and can also be used for molecular spintronic devices. In this article, we review the techniques that allow one to measure the electronic transport through single spin-crossover molecules. We particularly emphasize recent experiments using scanning tunneling microscopy and spectroscopy, where the spin state can be controlled by electric field, electric current or light.     

Non-classical radiation emission by a coherent conductor

We report experimental evidence that the microwave electromagnetic field generated by a normal conductor, here a tunnel junction placed at ultra-low temperature, can be non-classical. By measuring the quadratures of the electromagnetic field at one or two frequencies in the GHz range, we demonstrate the existence of squeezing as well as entanglement in such radiation. In one experiment, we observe that the variance of one quadrature of the photo-assisted noise generated by the junction goes below its vacuum level. In the second experiment, we demonstrate the existence of correlations between the quadratures taken at two frequencies, which can be stronger than allowed by classical mechanics, proving that the radiation at those two frequencies are entangled.¹     

Synthesis of sol–gel Na2Zr x Ti6−x O13 (0≤x≤1) materials and their performance in photocatalytic degradation of organic dyes

In this work we present the synthesis and characterization of four compositions of the solid solution with the general formula Na₂Zr _x Ti_6−x O₁₃ (0≤x≤1) which was prepared by a sol-gel method. The main goal of this work is to evaluate the influence of the incorporation of different amounts of zirconium into the binary phase Na₂Ti₆O₁₃ on two properties: the textural surface and E _g values. This titanate phase crystallizes in a monoclinic unit cell and is built into an octahedral TiO₆ framework forming a rectangular tunnel structure. Additionally, we have compared their photocatalytic performances in degradation of organic dyes under visible light. The heat-treated sol-gel samples were characterized by X-ray powder diffraction, N₂ physisorption, thermal analysis, UV and FT-IR spectroscopy. According to the X-ray powder diffraction results, the new ternary tunnel compound Na₂ZrTi₅O₁₃ was obtained as a single phase at 800°C. The cell parameters for the two end-member phases of that solid solution were refined to confirm that Zr ion was incorporated into the structural framework. This ternary compound had an E _g value of about 2.9 eV. The activity of all heat-treated Na₂ZrTi₅O₁₃ samples was tested in the photocatalytic degradation of methylene blue and Rhodamine B under visible light. The Na₂ZrTi₅O₁₃ calcined at 400°C showed the best performance with 95% of photodegradation of methylene blue and a half time t _1/2 of 15 min.     

基于赫斯勒合金Co2MnSi电极的磁性隧道结呈现巨磁阻效应

本文基于电子密度泛函理论计算和非平衡态格林函数技术研究了具有三明治结构的磁性隧道结构(非极化SrTiO₂薄层被夹在两个赫斯勒合金Co₂MnSi电极之间)的自旋极化输运特性. 理论计算结果清楚地表明磁平行组态的磁性隧道结呈现出几乎完美的自旋过滤效应. 磁反平行组态的隧穿系数比磁平行组态的隧穿系数小几个数量级,导致体系的磁阻比高达10⁶. 电子结构计算分析表明该磁性隧道结的巨磁阻效应源自赫斯勒合金Co₂MnSi电极内在的半金属性、以及阻挡层和电极之间界面处过渡金属原子3d电子的显著自旋极化.     

宁波轨道交通孔浦站隧道施工力学效应研究

针对孔浦站地下区间隧道为软土地区及已有人行天桥桩基的工程情况,进行二维有限元数值模拟的盾构隧道施工力学行为研究.分析了衬砌隧道施工各个阶段隧道变形、地表及桩基的沉降情况,并提出工程建议,对宁波地铁隧道的近接施工有一定的参考价值.     

冻融循环对含纯Ⅰ型裂隙围岩的动态起裂特性影响规律

以寒区隧道为工程背景研究在冻融循环作用下围岩内Ⅰ型裂纹的动态起裂特性演化规律,采用隧道模型试件作为研究对象,开展冻融循环试验与大尺度落锤冲击试验,得到岩石试件经历不同冻融循环次数后的相关力学参数,并在裂纹尖端粘贴裂纹扩展计(crack propagation gauge, CPG)测量预制裂纹的动态起裂时间。采用有限元软件建立相应的数值模型计算裂纹尖端的动态应力强度因子,采用试验-数值法计算动态起裂韧度,随后采用电镜对冻融循环后的试样进行扫描,研究冻融循环对岩石材料的细观损伤机制。研究结果表明:随着冻融循环次数的增加,岩石材料的纵波、横波波速与弹性模量逐渐减小,而泊松比逐渐增大;砂岩材料的动态起裂韧度随着冻融循环次数的增加逐渐减小,表征线性反比例的特性;材料内部的胶结物质会由于冻融循环的影响而流失,材料的孔隙和裂纹也随着冻融循环次数的增加而变多变大。     

粗糙界面对铁磁半导体/d-波超导隧道结隧道谱的影响

考虑到铁磁半导体和d-波超导体中空穴的有效质量和费米速度错配,运用推广了的Blonder-Tinkham-Klapwijk(BTK)理论模型,研究了粗糙界面散射对铁磁半导体/d-波超导(FS/DS)隧道结的隧道谱的影响.研究表明:(1)铁磁半导体和d-波超导体中空穴的有效质量和费米速度错配对系统的微分电导影响显著;(2)粗糙界面散射对Andreev反射有抑制作用.     

一维光子晶体的全反射隧穿效应的解析研究

为研究一维光子晶体全反射隧穿效应的解析理论,利用多光束干涉理论推导出一维光子晶体的全反射隧穿导带频率满足的解析公式,从理论上解释了一维光子晶体的全反射隧穿效应产生的物理机理。利用频率的解析公式对全反射隧穿导带的频率随周期数、入射角以及周期光学厚度的变化规律进行了解析研究。并与传输矩阵法的计算结果进行了比较,结果发现两种方法得出的结论是吻合的,从而证明了解析理论的正确性。解析理论便于对各参量间的依赖关系进行解析研究,弥补了一维光子晶体研究中数值计算方法的不足。     

Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode

The current through a metal–semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of carriers from the semiconductor into the metal, thermionic emission–diffusion (TED) of carriers across the Schottky barrier and quantum–mechanical tunneling through the barrier. The insulating layer converts the MS device in an MIS device and has a strong influence on its current–voltage (I–V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behavior of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase of the process of thermionic electrons and holes, which will in turn the IV characteristic of the diode, and an overflow maximum value [NT = 3 × 10²⁰] is obtained. The I–V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.