阵列波导光栅波分复用/解复用器光谱响应效率的理论模型

基于单模光波导的本征模场分布,瑞利－索末菲衍射积分公式和天线原理的互易定理,给出耦合器中两个非接触平面光波导耦合特性的描述.基此,根据等光程差不等振幅多光束干涉的光场叠加原理,推导出新颖的阵列波导光栅波分复用/解复用器的光谱响应效率的解析函数表达式,这些表达式可为快速精确分析阵列波导光栅波分复用/解复用器的特性提供理论基础.同时,介绍了一个计算阵列波导光栅波分复用/解复用器特性的例子,给出其光谱响应度和信号通道串扰.     

ZnS作为空穴缓冲层的新型有机发光二极管

采用磁控溅射方法在ITO表面沉积了不同厚度的ZnS超薄膜作为有机发光二极管(OLEDs)的缓冲层,使典型结构(ITO/TPD/Alq3/Al)的OLEDs的发光性能得到改善。ZnS缓冲层厚度对器件性能影响的实验结果表明,当ZnS缓冲层厚度为5nm时,器件电流密度提高了近2倍,亮度提高了2倍;当ZnS缓冲层厚度为10nm时,器件发光的电流效率提高18%,器件的性能得到改善。宽禁带的ZnS缓冲层对空穴从阳极到有机功能层的注入有阻碍作用,促进器件载流子平衡,提高了器件发光效率,改善了器件性能。     

高俘获效率电子辐照加速器的设计研究

加速管是一台加速器的核心部分. 一般电子辐照加速器的俘获效率在50%左右, 一半的电子都损失在加速管内. 丢失的电子打在加速管内壁, 产生轫致辐射、腔体发热量增加、真空变坏等许多负面影响. 采用一段等梯度加速结构, 相速沿加速管呈线形增加,调整相速变化规律及加速管腔体的尺寸参数, 设计出的加速管最终的俘获效率提高到90%以上, 同时平均加速梯度没有因此降低, 加速管总长度没有增加.     

非真空传输的高效交叉偏振滤波设计与产生

采用常规透镜设计了适用于非真空环境中交叉偏振波(XPW)产生的双透镜聚焦系统,在相对较短的距离实现了长焦透镜聚焦的效果,并测量了聚焦后的激光脉冲,发现其没有显著的非线性相位积累,保证了激光光束质量.在非真空中采用双BaF_2晶体得到了XPW系统转换效率22%,光谱1.78倍展宽的净化脉冲输出,双透镜组合聚焦形式使得双BaF_2晶体间距在13—22 cm内可保证20%以上的XPW转换效率,双晶体间距的调节冗余度提高了两个量级,极大地降低了双晶转换效率对晶体间距的依赖.这种正负透镜组合聚焦的光路设计在非真空中实现了高效稳定的XPW输出,为后续的放大应用提供了高对比度、宽光谱的高质量种子源.     

Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

Nondoped blue fluorescent OLED based on cyanophenanthrimidazole‐styryl‐triphenylamine/carbazole materials

New 2‐(4′‐9H‐carbazole‐9‐yl)‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐Cz) and 4‐(2‐(4‐(diphenylamino)phenyl‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐TPA) have been synthesised, and their photophysical, electrochemical, and electroluminescent properties were analysed in comparison with their cyano‐free parent compounds, SPI‐Cz, and SPI‐TPA. Solvatochromic effects show the transformation of an excited state character from locally excited (LE) state to charge transfer (CT) state. Using time‐dependent density functional theory calculation, the excited state properties of these donor‐acceptor blue emissive materials have been analysed. Their excited state properties have been tuned by replacing the strong donor triphenylamine to weak donor carbazole to achieve the combination of high photoluminance efficiency locally excited (LE) component and high exciton‐utilizing CT component in one excited state. Hybridization processes between LE and CT components of SPICN‐Cz and SPICN‐TPA in the emissive state have been discussed. The nondoped organic light emitting diode device based on SPICN‐Cz exhibit better electroluminescent performances than those of SPICN‐TPA–based device: high external quantum efficiency of 2.58 %, current efficiency of 2.90 cd A^‐1, and power efficiency of 2.26 lm W^‐1 with Commission Internationale de l'Éclairage (CIE) coordinates of (0.15, 0.12). The excited state modulation and the composition of LE and CT states in the donor‐acceptor system could be useful to design low‐cost, high‐efficiency fluorescent organic light emitting diode materials.     

激光透射成像法测量石英管的外径与壁厚

为了同时同位测量石英管的外径和壁厚,建立了激光透射成像系统,对系统测量原理进行研究。基于几何光学和菲涅尔公式,分别导出平行光垂直照射石英管后的透射光线偏向角、相对光强与入射光线离轴距离之间的关系;通过数值计算,分析了偏向角、相对透射光强随入射光线离轴距离的变化特点;针对物方远心光路,分析了光阑对偏向角和相对光强的限制;基于CCD成像原理,通过引入标定系数和补偿因子,导出石英管外径与壁厚的计算公式。实验结果表明:外径绝对误差和相对误差的平均值分别为0.119mm和0.91%,壁厚绝对误差和相对误差的平均值分别为0.153mm和6%。     

阳极界面修饰对钙钛矿太阳能电池性能的影响

采用在聚(3,4-乙撑二氧噻吩)∶聚苯乙烯磺酸(Poly(3,4-ethylenedioxythiophene)∶Poly(styrenesulfonate),PEDOT∶PSS)阳极界面层上直接旋涂二甲基亚砜(Dimethyl Sulfoxide,DMSO)的方法,对PEDOT∶PSS薄膜进行修饰,以提高所制得的钙钛矿太阳能电池器件性能.在5000rpm转速条件下旋涂DMSO后,器件的能量转换效率达到11.43%,与PEDOT∶PSS阳极界面层未做任何修饰的器件相比,效率提高了29.15%.测试表征了修饰前后PEDOT∶PSS薄膜的透光性、表面形貌、电导率、器件的外量子效率曲线以及器件在光照和暗态下的J-V特性曲线,分析了器件性能提高的原因.结果表明:经过修饰的PEDOT∶PSS薄膜导电性显著增强,从而更加有利于器件阳极对空穴的抽取和收集;较未修饰时,器件的短路电流密度得到了大幅度提升,进而使得器件获得更高的能量转换效率.     

高衍射效率衍射望远镜系统的设计/加工及成像性能测试

为提高衍射效率,设计并制作了口径为300mm的衍射成像系统.该系统的物镜是由一块四台阶位相型菲涅尔波带片通过激光直写套刻和Ar离子束物理刻蚀技术在石英玻璃基板上加工而成.测试了衍射物镜的衍射效率,实验结果表明:衍射物镜在波长632.8nm处的衍射效率为66.4%,达到理论值的82%.搭建了衍射成像系统光路,分别采用10μm星点孔与分辨率板,测试了系统的成像性能.实验测得星点像直径为44μm,分辨率板的极限分辨率达到84lp/mm,接近该系统的理论计算值,表明该衍射成像系统具有较好的成像性能.     

高灵敏度区域中子监测仪探测效率曲线模拟

中子监测仪对不同能量中子的探测效率是其重要的性能指标,直接影响其测量值的可信度与使用效果。针对中国科学院高能物理研究所生产的高灵敏度区域中子监测仪（HANM型）,利用蒙特卡罗软件模拟其探测效率曲线,模拟结果表明该仪器探测效率随能量增加,先上升后下降,其探测效率最高值在1 MeV附近。通过改变模拟条件中的射线入射方向,对比探测效率曲线趋势变化,验证该型仪器的探测效率曲线趋势的可靠性。在此基础上,分别利用D-D,D-T加速器产生2.5 MeV和14 MeV单能中子,对探测效率曲线进行校准与验证,最终获得此型仪器的探测效率曲线。