Probe‐assisted spin manipulation in one‐dimensional quantum dots

We study a spin structure that arises in a one‐dimensional quantum dot with zero total spin under the action of a charged tip of a scanning probe microscope in the presence of a weak magnetic field. The evolution of spin structure with changing the probe position is traced to show that the movable probe can be an effective tool to manipulate the spin. The spin structures are formed when the probe is located in certain regions along the dot due to Coulomb interaction of electrons as they are redistributed between the two sections in which the quantum dot is divided by the potential barrier created by the probe. There are two main states: spin‐polarized and non‐polarized ones. The transition between them is accompanied by a spin precession governed by the Rashba spin–orbit interaction induced by the electric field of the probe. In the transition region the spin density changes strongly while charge distribution remains nearly unchanged. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Feature of the magnetotransport of a quasi-one-dimensional electrons on the superfluid helium

The magnetotransport in a nondegenerate quasi-one-dimensional (Q1D) electron system over superfluid helium has been investigated experimentally. The measurements are performed in the presence of a perpendicular magnetic field B up to 2.6 T in the temperature range T=0.48–2.05 K in the system of conducting channels of 100–400 nm width. It is shown that the value of longitudinal magnetoresistance ρ_xx increases with B. In the electron-gas scattering region (T>0.9 ), the behaviour of ρ_xx agrees with classical Drude law. In the quantum transport regime, the self-consistent Born approximation (SCBA) theory for a 2D electron system over liquid helium describes the experimental data qualitatively. The deviation due to the difference of the experimentally studied Q1D system of the electrons in a parabolic potential well differs from theoretically analysed one. The experimental data agree with the theoretical calculation for the Q1D electron system at the weak magnetic field and the low temperature.

The negative magnetoresistance of the conducting channels has been observed in both the gas- and the ripplon-scattering region. These effects have been explained by weak carrier localization on the gas atoms at high temperature and by display of the quantum magnetotransport features in a mesoscopic system at low temperature.     

Characterization of relativistic electrons generated by a cone guiding laser pulse

We demonstrated the interaction of a gold cone target with a femto second(fs) laser pulse above the relativistic intensity of 1.37×10 18 μm 2 W/cm 2.Relativistic electrons with energy above 2 MeV were observed.A 25%-40% increase of the electron temperature is achieved compared to the case when a plane gold target is used.The electron temperature increase results from the guiding of the laser beam at the tip and the intense quasistatic magnetic field in the cone geometry.The behavior of the relativistic electrons is verified in our 2D-PIC simulations.     

Coupling Distant Spins of Surface-State Electrons by Manipulating Their Collective Vibrations

The system of electrons on liquid helium is an interesting candidate to implement quantum computation, due to the long coherence times of the qubits encoded by the electronic spins. In order to implement the quantum logic operations between the spins, we propose here a configuration, similarly to the cooled ions in a trap, to couple the distant electrons via manipulating their center of mass （CM） vibrations. First, we show that the electrons could be confined in a common harmonic oscillator potential by using an electrostatic field. Then, with a single current pulse （applied on the micro-electrode below the liquid helium） the distant electronic spins can be coupled simultaneously to the CM mode. Finally, by adiabatically eliminating the CM mode, effective interaction between the distant spins is induced for implementing the desired quantum computing.     

(e, 2e) triple differential cross section for ionization-excitation of helium

Simultaneous ionization and excitation of helium by electron impact is considered in an improved second Born approximation. The wave function of the low energy ejected electron is obtained in the field of residual He⁺ ion in 2s-state. The calculation has been done for the processe ⁻+He→e ⁻+He⁺(2s)+e ⁻ in the coplanar asymmetric geometry with Hartree-Fock wave function of Byron and Joachain for the helium ground state and the results are compared with the absolute experimental data of Dupreet al [J. Phys. B25, 259 (1992)] at ∼ 5.5 keV incident energy. Our results are found to increase the ratio of the recoil peak to binary peak intensity by about 30% over the first Born results and thus to bring it closer to the experimental data.     

Derivative discontinuities in density functional theory

Fifty years after the original formulation of density functional theory (DFT), subtle consequences of the mathematical mappings underlying its formalism continue to merit new views. In this article, we discuss the origin, the importance, and the challenges associated with finding the derivative discontinuity of the exchange-correlation (XC) energy of DFT at integer–electron numbers. We show how even the energy of a quantum electron gas with finite volume and number of electrons displays such derivative discontinuities, but continuous density functional approximations to the XC functional miss them entirely. We discuss some of the practical problems that arise due to this lack of derivative discontinuities in standard functionals, and explain new ways to recover them.     

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

The viscosity cross-section for elastic electron-xenon collisions including electron spin polarization

The results of the evaluation of the viscosity cross-section for elastic electron-xenon collisions, taking into account the spin-orbit interaction of the continuum electron, in the energy interval from 0.1 eV to 50 eV are presented and discussed. The calculations are performed on the basis of three theoretically derived sets of phase shift data obtained by different authors and on the deduced relativistic expression for the viscosity cross-section in terms of phase shifts discerning the spin-up and spin-down states of the scattered electrons. Comparison with viscosity cross-sections, as evaluated from non-relativistic phase shifts extracted from experiments, strongly favours the relativistic results. The assumption of isotropic scattering is critically examined and the error induced by its use is shown to persist to the same extent as in non-relativistic calculations, at least in the energy region considered. Received: 22 April 1998 / Received in final form: 16 December 1998     

Influence of wire mesh electrodes on the volume and surface characteristics of dielectric barrier discharge of atmospheric pressure helium

The dielectric barrier discharge of helium in a 6 mm gap at atmospheric pressure was studied. In this paper, the influence of electric field distribution on the uniformity of DBD is analyzed theoretically and verified by experiments. The experimental results show that the mesh electrode produces a local enhancement effect by affecting the electric field and then produces corona discharge, which provides seed electrons for the subsequent discharge process. The effects of mesh diameter and size on discharge uniformity and stability are analyzed, the electrode structure parameters are optimized, the method of a segmented electrode is proposed, and the discharge process and charge distribution are studied. The electrical diagnosis results of plasma technology show that the segmented mesh electrode reduces the breakdown voltage of DBD and increases the charge deposition.