聚甲基丙烯酸甲酯掺杂Ce3+的飞秒激光三维信息存储

用飞秒激光(200 fs,1 kHz,800 nm)脉冲在掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯(PMMA)膜中进行了光存储实验研究,包括对样品的吸收光谱、激光照射前后的电子旋转共振(Electron spin resonance,ESR)光谱的测量和讨论。结果表明掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯膜具有较低的写入阈值,有利于高速、并行的三维光存储。实验结果采用传统光学显微镜并行读出。给出了四层存储结果(点间距和层间距分别是4μm和16μm),并讨论了脉冲能量的大小对空腔尺寸的影响,进行高密度存储时,在保证读出信号灰度值足够大的情况下,应选择尽量小的激光脉冲写入能量。实验结果表明这种材料可以应用于三维光信息存储。     

Experimental test of special relativity by laser spectroscopy

The Doppler-free laser-spectroscopic frequency measurement of Doppler-shifted optical lines in forward and backward direction of a fast ion beam permits a sensitive test of the relativistic Doppler-formula and, hence, the relativistic time dilation factor . An experiment on metastable ⁷Li⁺, stored at a velocity of v = 0.064c in the Heidelberg heavy-ion storage ring TSR, has confirmed time dilation with unprecedented accuracy. Latest tests at two different ion-velocities (v = 0.03c and v = 0.064c) will enhance these measurements. An improved version of this experiment will be carried out at the experimental storage ring (ESR) at the Gesellschaft für Schwerionenforschung (GSI) in Darmstadt. The ESR permits ⁷Li⁺ to be stored at v = 0.33c which promises an improvement of the sensitivity to deviations from γ _SR by an order of magnitude. A first test at the ESR has shown the feasibility for this kind of experiment.     

Convection in the bridgman growth of narrow-gap semiconductors

Summary The free convection in the melt during the crystal growth of small-gap semiconductors, and its influence on the electrical properties are discussed. Dimensionaless parameters of the fluid flow, electrical properties of PbTe, Pb_1−x Sn _x Te and Hg_1−x Cd _x Te single crystals, grown by vertical Bridgman technique at very low velocity, and some structures, found in these materials, support the presence of free convection.     

Rotation selectivity of random phase encoding in volume holograms

We present the study of angular selectivity for holographic multiplexing based on random phase encoding by a ground glass. The rotational selectivity of the volume hologram is calculated theoretically and coincides with the experimental measurement. By controlling the parameters including rotational center, effective numerical aperture of both volume hologram and the ground glass, we can obtain different rotational selectivity applied to random phase encoding in volume holographic storage.     

Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05))O_3 thin membranes

Free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05)O_3(PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an α-axis preferred orientation.The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm,but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film.The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm~3 and 54.5%,respectively.In contrast,after removing the substrate,the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm~3 and 67.9%,respectively.     

偶氮基染料掺杂薄膜的双光子图象存储

研究了偶氮基染料掺杂薄膜ＭＯ－ＰＶＡ和ＥＯ－ＰＶＡ的双光子存储特性。在对薄膜用Ａｒ＾＋激光作预激发下实现了Ｈｅ－Ｎｅ激光的红光存储。获得了实时和短时存储照片。光电记录存储曲线，分析了双光四能级系统的存储机制。实现确定了最佳预激发功率约为０．２８Ｗ／ｃｍ＾２，最小Ｈｅ－Ｎｅ光可存储功率密度低于０．２Ｗ／ｃｍ＾２。     

氮化硼纳米管阵列储氢的计算机模拟

采用巨正则蒙特卡罗方法模拟常温、中等压强下单壁氮化硼纳米管阵列的物理吸附储氢,重点研究压强、纳米管阵列的管径和管间距对单壁氮化硼纳米管阵列物理吸附储氢的影响.计算结果表明,氮化硼纳米管阵列的储氢性能明显优于碳纳米管阵列,在常温和中等压强下的物理吸附储氢量(质量百分数)可以达到和超过美国能源部提出的商业标准.并给出相应的理论解释.     

低温纳米复合相变蓄冷材料热物性研究

低温相变蓄冷的关键是蓄冷材料的开发.本文针对啤酒工艺对冷源温度的要求,选择BaCl2共晶盐水溶液为相变蓄冷材料基液,在基液中添加粒径为20nm的TiO2纳米粒子,形成具有蓄冷功能的纳米复合材料.对其热物性如导热系数、相变潜热、相变温度、过冷度及粘度进行了实验测量和分析.结果表明,在TiO2纳米粒子的质量分数为1%的情况下,纳米复合蓄冷材料的导热系数比基液提高了11.28%,过冷度从3.97℃降为1.21℃,同时粘度增加了21.7%,相变潜热略有降低.     

掺杂PbSe/PVA量子点的光致聚合物全息特性

通过原位合成法以聚乙烯醇辅助合成了6.5nm、10nm和15nm的PbSe量子点,研究了掺杂PbSe量子点的光致聚合物的全息特性.将三种尺寸的PbSe量子点按不同浓度分别掺入光致聚合物中,制成无机-有机复合型光致聚合物膜,并对其全息性能进行研究.复合聚合物膜的UV-Vis吸收光谱表明掺入的PbSe量子点并未与聚合物中的有机组分发生化学反应.采用氩氪离子激光器输出的647nm红光研究了复合聚合物膜的透过率和全息记录光栅的布喇格偏移与衍射效率.透过率曲线表明PbSe量子点在复合聚合物膜中分散良好,膜表面均匀.由于PbSe量子点在聚合物链中起支撑作用,复合聚合物膜在全息记录过程中不易发生形变,从而增加了聚合物膜的抗缩皱能力.衍射效率曲线表明掺入PbSe量子点的复合聚合物膜的衍射效率比未掺杂的有所提高.此外,体系存在一个最优值,当掺入平均粒径为10nm且浓度为3.6×10-6 mol/L的PbSe量子点时,样品的透过率达到84%,衍射效率从67.2%提升到89.7%,缩皱率降低到0.8%,极大提高了材料的全息性能.     

Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1−x−yLaxCay)Ti1−x/4O3 thin films derived at low temperature

Highly (100)-oriented (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ ($x=0.15$, $y=0.05$; $x=0.1$, $y=0.1$; $x=0.05$, $y=0.15$) thin films were deposited on Pt/Ti/SiO₂/Si substrates at a low temperature of 450?°C via a sol–gel route. It was found that all the (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ ($x=0.1$, $y=0.1$) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss ($\tan ?\delta <0.08$) and leakage current ($J～4.6\times {10}^{?5}$ A/cm²), a high recoverable energy density (W_re ～ 15 J/cm³), as well as a large pyroelectric coefficient (p ～ 190 μC/m²K) and figure of merit ($F_{\mathrm{d}}^{\prime }～77\mathrm{\mu }\text{C}/{\text{m}}^2$K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.