Ag纳米颗粒的光吸收和透射电镜研究

用硼氢化钠作还原剂,制备出两种相对稳定的含银纳米颗粒的水溶胶,用透射电镜（TEM）和光学吸收谱对这些颗粒进行了表征.当被还原的银离子较少时,所形成的银纳米颗粒较小,吸收峰呈现二极等离子体共振吸收峰.当被还原的银离子较多时,银纳米颗粒尺寸变大,并出现二极和四极共振吸收峰.在Ag纳米颗粒形成后,对其溶液稀释,发现其峰形保持不变,而峰位会出现红移,最大红移量可达到10 nm.透射电镜研究表明,低浓度溶胶中的Ag纳米颗粒尺寸较为均匀,平均直径12 nm.高浓度溶胶中的纳米颗粒尺寸呈双尺寸分布特点,少量颗粒直径小于14 nm,大部分颗粒直径大于20 nm.     

用力敏传感器测量乙醇水溶液的表面张力系数与浓度的关系

用硅压阻式力敏传感器测量了纯水、乙醇的表面张力系数，并测量了不同浓度的乙醇水溶液的表面张力系数，得到了乙醇水溶液的表面张力系数随浓度的变化曲线．     

Vassiliev invariants for braids on surfaces

We show that Vassiliev invariants separate braids on a closed oriented surface, and we exhibit a universal Vassiliev invariant for these braids in terms of chord diagrams labeled by elements of the fundamental group of the surface.

     

Numerical calculations of temperature distribution of double layer metallic surface treated by laser beams

A mathematical model of laser beam treatment of double layer alloys (Ni/Fe, Al/Fe and Cr/Fe systems) describing the effect of laser beam on different physical and geometrical parameters of coated layer system has been adapted. The numerical solutions of the non-homogeneous heat-transport differential equation could estimate the temperature of the treated region.The suggested model allows investigation of the temperature distribution as a function of treated surface and laser parameters. The physical parameters of the treated materials were taken as functions of temperature due to the change in the temperature of the treated double layer materials.     

2‐connected 7‐coverings of 3‐connected graphs on surfaces

An m‐covering of a graph G is a spanning subgraph of G with maximum degree at most m. In this paper, we shall show that every 3‐connected graph on a surface with Euler genus k ≥ 2 with sufficiently large representativity has a 2‐connected 7‐covering with at most 6k ? 12 vertices of degree 7. We also construct, for every surface F² with Euler genus k ≥ 2, a 3‐connected graph G on F² with arbitrarily large representativity each of whose 2‐connected 7‐coverings contains at least 6k ? 12 vertices of degree 7. © 2003 Wiley Periodicals, Inc. J Graph Theory 43: 26–36, 2003     

Standardization of Methods for Characterizing the Surface Geometry of Solids

Since a comprehensive survey published in 1999 [1] much work was done in standardizing measuring methods to characterize the surface geometry of dispersed and/or porous solids and to certify reference materials. The present paper is an extension of a short communication [2]. It gives a survey on existing standards and reports on new drafts and proposals.     

用改进嵌入原子法计算Cu晶体的表面能

用改进嵌入原子法(MEAM)计算了Cu晶体12个晶面的表面能.结果表明，密排面(111)的表面能最小.其他晶面的表面能随其晶面与(111)晶面夹角的增加而增加，据此可以粗略地估计各晶面表面能的相对大小.给出的几何结构因子的确定方法及结果可以直接用于计算其他面心立方晶体的表面能及其他特性.在Cu,Ag等面心立方薄膜中出现(111)择优取向或织构的机理是表面能的最小化. 关键词： 改进嵌入原子法 铜 表面能 计算     

Microstructure and high-temperature wear resistance of a laser surface alloyed γ-TiAl with carbon

TiC reinforced composite coating on γ-TiAl alloy was successfully fabricated by laser surface alloying with carbon. The fine TiC reinforcing phase had a gradient distribution in the coating, and its growth morphology of TiC in laser surface alloyed coating was in unique faceted platelet-like. The composite coating exhibited high hardness and excellent high-temperature sliding wear resistance.     

Interface Optical Phonon Modes and Frohlich Electron-Phonon Interaction Hamiltonian in a Multi-shell Spherical Nanoheterosystem

Under dielectric continuum approximation, interface optical (IO) phonon modes and the Frohlich electron-IO phonon interaction Hamiltonian in a multi-shell spherical nanoheterosystem were derived and studied. Numericalcalculations on three-layer and four-layer CdS/HgS spherical nanoheterosystems have been performed. Results revealthat there are four IO phonon modes for the three-layer system and six IO phonon modes for the four-layer system.On each interface, there are two IO phonon modes, the frequency of one is between WTO,CdS and WLO,CdS, and that ofthe other is between WTO,HgS and WLO,HgS. With the increasing of quantum number l, the frequency of each IO modeapproaches one of the two frequency values of the single CdS/HgS heterostructure, and the potential for each IO modeis more and more localized at a certain interface, furthermore, the coupling between the electron-lO phonons becomes weaker.