维生素B类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱

维生素Ｂ类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱汪瑗，于秉正张煦（首都师范大学分析测试中心北京１０００３７）（北京大学分析测试中心北京）关键词维生素Ｂ_１，维生素Ｂ_２，薄层色谱，表面增强拉曼散射，近红外付立叶变换拉曼光谱将薄层色谱（ＴＬＣ）...     

Electrical Potential Distribution around a Charged Colloidal Particle: Nonlinear Integral Equation

多电解质溶液中带电胶体粒子的电势分布由球形Ｐｏｉｓｓｏｎ－Ｂｏｌｔｚｍａｎｎ方程（ＰＢＥ）描述．ＰＢＥ是一个非线性的微分方程，且难以求得其解析解．本文采用非线性Ｐ－Ｂ积分方程，计算电势分布的数值解．首先，根据静电场和热力学系统中的物理定理，导出描述电势分布的Ｐ－Ｂ积分方程（ＰＢＩＥ）；其次，用迭代方法求ＰＢＩＥ的数值解．最后，计算了在３－１型电解液中无量纲半径κａ分别为０．１２和０．２２，无量纲表面电势ξ分别为１，２，４，６时球形胶体粒子外部的电势值．为了检验数值解的精度，计算了表面电荷密度，并与Ｌｏｅｂ（１９６１）和Ｏｓｈｉｍａ（１９９５）等人的结果比较，本文结果的相对误差小于１％，优于Ｏｓｈｉｍａ的结果．     

Structure and electronic transport properties of the Misfit layer compound (LaSe)1.14(NbSe2)2, „LaNb2Se5”︁

The new misfit layer compound (LaSe)_1.14(NbSe₂)₂ has been synthesized from the elements at 1050- and its structure has been determined by a composite approach. The structure has an alternating stacking sequence of [LaSe] and two [NbSe₂] layers along the c direction. The misfit of the two different layers is occurring along the a direction: a₁(LaSe)=6.0191 Å and a₂(NbSe₂)=3.4372 Å therefore yielding a ratio of 1.751 which is very close to 7/4. An investigation of electrical resistivity was done. The crystal shows superconducting properties at 5.3 K.     

均相催化反应在任一给定形状微电极上的稳态电化学行为

根据反应层的概念对在任一给定形状微电极上进行的准一级和二级均相催化反应机理(EC'')的稳态电化学行为进行了研究。本方法简便易行,不需要解复杂方程的数学技巧。利用推导出的这些方程,可计算准一级和二级均相催化反应的动力学常数。     

毛细管电色谱中双电层叠加的研究

通过流动相中电解质浓度对毛细管电色谱柱效能的流动相平均线速度的影响，研究了ＣＥＣ中双电层叠加现象。提出选择合适电解质组成的浓度及在制备色谱柱过程中避免细小和破碎的固定相颗粒进入柱中，以有效地减小双电层叠加作用。     

A generalized sandwich theorem

It is proved for an arbitrary commutative ring A with identity and any integer n3 that if H is a subgroup of GL_n(A) normalized by E _n(A,q), then there is an ideal of A such that E _n(A,) H GL _n (A, (:q⁴⁰).Furthermore, is uniquely determined up to a certain equivalence relation on the set of ideals of A. The result extends a theorem of Bak, by removing a stability condition he uses on A.     

Isoperichoric focusing field-flow fractionation and thin layer isoperichoric focusing based on coupling of gradient generated by primary field with secondary field action: general principles and performances

The primary field forces can generate spatially oriented gradient of the effective property of a continuum or pseudo-continuum fluid (carrier liquid). When this gradient is coupled with the action of a secondary field of identical or different nature the isoperichoric focused zones of the dispersed species can appear. Consequently, they can be separated according to differences responding to the property gradient of the carrier liquid. This concept can be applied under static (non-flow) conditions in thin layer focusing as well as under dynamic conditions with the elution due to the carrier liquid flow in focusing field-flow fractionation. The gradient established by the action of the primary field and the concentration distribution of the isoperichoric focused zone formed by the coupled effect of the gradient and of the primary or secondary field are described theoretically. The rigorous relationship describing the shape of the focused zone is compared with the approximate solutions. The performances of the proposed principle were evaluated by model calculations. Potential experimental configurations considering the implementation of the static and dynamic conditions are discussed. The generalized isoperichoric focusing theory can be applied to describe the particular processes operating in analytical and preparative focusing separations of the particles of various, but especially of biological origin.     

金属基上以YSZ为过渡层的YBCO薄膜的微观结构

采用透射电子显微术（ＴＥＭ），研究了用磁控溅射技术在柔性金属基体上制备的、钇稳定的ＺｒＯ２（ＹＳＺ）为过镀层的ＹＢａ２Ｃｕ３Ｏ７－ｙ（ＹＢＣＯ）薄膜的横断面结构。所得ＹＢＣＯ膜的超导临界转变温度Ｔｃ为９１Ｋ，临界电流密度Ｊｃ＝２×１０３Ａ／ｃｍ２（７７Ｋ，０Ｔ）。基体为Ｎｉ基合金（ＨａｓｔｅｌｏｙＣ）。ＹＳＺ层为致密、均匀的细晶组织，约１２μｍ厚，具有织构取向，并与基体紧密连接。ＹＢＣＯ层的厚度不均匀，约５００ｎｍ；ＹＢＣＯ／ＹＳＺ界面有时连接较差，在该界面上有杂质出现，杂质有可能引发裂纹。     

Evaluation of the sputtering rate variation in SIMS ultra‐shallow depth profiling using multiple short‐period delta layers

We have developed multiple short‐period delta layers as a reference material for SIMS ultra‐shallow depth profiling. Boron nitride delta layers and silicon spacer layers were sputter‐deposited alternately, with a silicon spacer thickness of 1–5 nm. These delta‐doped layers were used to measure the sputtering rate change in the initial stage of oxygen ion bombardment. A significant variation of sputtering rate was observed in the initial 3 nm or less. The sputtering rate in the initial 3 nm was estimated to be about four times larger than the steady‐state value for 1000 eV oxygen ions. Copyright © 2003 John Wiley & Sons, Ltd.