玻璃中CdSeS纳米晶体的生长及其性能

对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利 关键词： 纳米晶体 生长机理 深能级缺陷     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

临界空穴扩张比准则的适用性

用新研制成的DE36平台钢制的轴对称和平面应变试样,进一步考察了临界空穴扩张比V_(Gi)准则[1]、[2]、[3]的适用性。实验和大应变有限元理论计算结果表明,V_(Gi)准则适用于所研究材料。文中指出,按V_(Gi)准则可根据试样或构件材料中V_G的发展变化来预起裂位置。     

高生长速度条件下的“层片↔棒状”共晶转变机理研究

低速生长条件下, 共晶“层片↔棒状”转变只由两相的体积分数控制. 高速情况下, 这种转变有时亦发生, 其转变机理不清楚. 本文应用竞争生长准则, 结合高速生长条件下层片共晶和棒状共晶生长模型研究了生长速度引起的“层片↔棒状”转变机理. 结果显示: 体积分数在临界值附近很小的范围内, 生长速度和溶质配分系数的增大可引起“棒状→ 层片”共晶转变; 而当体积分数远离临界值时, 转变不发生. 生长速度名义上引起“层片↔棒状”共晶转变实际上是由生长速度变化引起的体积分数的变化导致的. 关键词： “层片↔棒状”共晶转变 竞争生长 生长速度 体积分数     

Dynamic Light Scattering Studies on Crystallization of Isotactic Polystyrene from Dilute Solutions at High Supercoolings

Crystallization of isotactic polystyrene (it‐PS) from dilute solution at high supercooling has been investigated by dynamic light scattering (DLS). We successfully obtained simultaneously, in situ in solutions, the time developments of both random coils of it‐PS molecules and the growing crystals. The size of coils remains constant during growth, while the crystals pass through two stages, that is, an induction period at the early stage with very slow growth rates and a subsequent linear growth stage. It is confirmed that the temperature dependence of the linear growth rates, determined by DLS, agree well with that determined by electron microscopy. The temperature dependences of the growth rate and the inverse of induction time are dependent on the viscosity of solvent, which indicates that all dynamics are dominated by the segmental motion of polymer chains in solution at high supercoolings (low temperatures). Two possibilities are proposed for the induction period.     

Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method

Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction （XRD） study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction （x） is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.     

Photocatalytic degradation efficacy of Bi4Ti3O12 micro-scale platelets over methylene blue under visible light

〈001〉 textured Bi₄Ti₃O₁₂ platelets with micro scale size were synthesized by a facile molten salt method. The photocatalytic activities of the as-prepared samples were measured with the photodegradation of methylene blue at room temperature under visible light irradiation. The Bi₄Ti₃O₁₂ with the aspect ratio of 35 exhibited good absorption in the visible light region and the photodegradation against methylene blue was higher than that of anatase TiO₂ reference, showing that the high degree of preferred {001} facets on the plate surface benefits the electronic transmission. In addition, the layer-pervoskite structure facilitates the mobility of the photogenerated carriers and hampers their recombination. The above results indicated that the large specific surface area of the as-prepared samples could attribute to the presence of a number of oxygen vacancies and then lead to the good photo-electric property. This work proposed an alternative way to tailor the structure of micro-sized platelets to get excellent properties comparable to the nano materials.     

Nanoindentation analysis of the pop-in events on SiGe single layer

The growth of metastable silicon germanium (Si_0.8Ge_0.2) thin film on Si(1 0 0) by ultrahigh-vacuum chemical vapor deposition has been subjected to residual indentation studies. A nanoindentation system has been applied to analyze SiGe film after different annealing treatments. A number of phenomena have been found for the heteroepitaxial growth of SiGe film at the critical thickness of 350 nm, including single discontinuity (the so-called “pop-in” event) as well as the elastic/plastic contact translation. Atomic force microscopy is employed to investigate the surface impression. Pop-in events in the load-indentation depth curves of 400 and 500 °C and no nano-cracks in the vicinity regions are found. The values of H ranging from 13.13±0.9, 21.66±1.3, 18.52±1.1, 14.47±0.7 GPa and the values of E ranging from 221.8±5.3, 230.7±6.4, 223.5±4.6, 156.7±3.8 GPa, are obtained. The elastic/plastic contact translation of the SiGe film occurs at different annealing conditions, with h_f/h_max values in the range of 0.501, 0.392, 0.424, and 0.535 for samples are treated at RT, 400, 500, and 600 °C, respectively. The mechanism responsible for the pop-in event in such crystal structure is due to the interaction of the indenter tip with the pre-existing threading dislocations, since the release of the indentation load is bound to be reflected in the directly compressed volume.     

Effect of far-field flow on a columnar crystal in the convective undercooled melt

The growth behavior of a columnar crystal in the convective undercooled melt affected by the far-field uniform flow is studied and the asymptotic solution for the interface evolution of the columnar crystal is derived by means of the asymptotic expansion method.The results obtained reveal that the far-field flow induces a significant change of the temperature around the columnar crystal and the convective flow caused by the far-field flow accelerates the growth velocity of the interface of the growing columnar crystal in the upstream direction and inhibits its growth velocity in the downstream direction.Our results are similar to the experimental data and numerical simulations.     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。