压电弯曲元的夹层梁解析模型

压电弯曲元是一类传感和作动器件,已得到广泛的应用．基于一阶剪切变形理论发展了压电弯曲元夹层梁解析模型,对梁截面采用统一转角并将耦合电势沿厚度的分布假设为二次函数,进一步修正了横向剪应变对电位移的影响．以弯曲元简支梁自由振动为例进行数值分析,解析模型解与二维精确解相比具有良好的精度,为分析弯曲元动力机电响应提供了良好的解析模型．     

Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si

The structural and optical properties of β-FeSi₂ precipitates produced by ion beam synthesis have been investigated by transmission electron microscopy, photoluminescence (PL) analysis and near infrared transmission measurements. The PL spectrum of β-FeSi₂ precipitates in a dislocation free sample has been observed to consist of a sharp line at 1.54 μm and a weak peak at 1.46 μm. Optical transmission measurements showed a direct band gap about 0.8 eV smaller than in continuous β-FeSi₂ film. Calculation of the electronic bands of β-FeSi₂ for different values of the lattice parameters indicates that this reduction can be ascribed to band distortion provided by the lattice strain.     

量子密钥分发实验中偏振分束器的研究

量子密钥分发是量子信息论中发展最快、最接近实用化的领域,偏振分束器是量子密钥分发系统中重要的组成部分,对分束器的经典分析和量子分析得出了完全一致的结果.     

Approximate analytical expressions of apertured broadband beams in the far field

The approximate analytical expressions of the apertured broadband beams in the far field with Gaussian and Laguerre-Gaussian spatial modes are presented.For the radially polarized Laguerre-Gaussian beam,the result reveals that the electromagnetic field in the far field is transverse magnetic.The influences of bandwidth(Γ) and truncation parameter(C 0) on the transverse intensity distribution of the Gaussian beam and on the energy flux distribution of radially polarized Laguerre-Gaussian beam are analysed.     

Free standing modulation doped core–shell GaAs/AlGaAs hetero‐nanowires

Modulation doped AlGaAs/GaAs core–shell nanowire structures were grown by molecular beam epitaxy. A Si delta‐doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta‐doped shell to the GaAs core. The n‐type character of the channel is demonstrated by applying a back‐gate voltage. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Observing build up of geometric phase in an adiabatic RF flipper with the amplitude of its rotating field

To demonstrate that adiabatic RF flippers impose an inherent geometric phase on the neutron polarization vector, we built a NSE setup consisting of two pairs of such flippers in a pulsed neutron beam. As is well known, the combined gradient and RF fields in each flipper—in the rotating frame—behave as a rotating field. The amplitude of this field in the first three flippers was kept maximum. For various amplitudes of the rotating field in the remaining flipper we measured the NSE pattern. Besides the shift of the NSE-point due to the variation of the dynamic phase, the NSE patterns show the development of the geometric phase.     

Long-exposure far-field properties of the array of mutually-injected fiber lasers

In this paper, the long-exposure far-field properties of the array of mutually-injected fiber lasers are studied to understand the effect of the multiple phase-locked states on coherent beam combining of the array. It is found that the long-exposure far-field will degenerate into the superposition of the intensities of the elementary lasers when all the phase-locked states of the array are exported with the same probability. It means that the interference pattern will be greatly weakened in the long-exposure far-field because of the export of multiple phase-locked states of the array. This result implies that the multiple phase-locked states of the array go against coherent beam combining of the array, and only some of these phase-locked states should be exported. Then, the effects of the high-order phase-locked states on the far-field are discussed. The result suggests that only the in-phase state should be exported (i.e., all the other phase-locked states should be suppressed) in order to realize high-efficiency (> 80%) coherent beam combining when the number of the elementary lasers of the array is smaller than 19.     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.     

X射线成像系统点扩展函数理论模型及其实验验证

X射线成像系统点扩展函数是影响X射线成像空间分辨率和密度分辨率的决定性因素,在系统分析X射线成像物理过程基础上,建立了X射线成像系统点扩展函数的一种数学解析模型,推导出了射束有效宽度计算公式,最后通过实验验证了模型的正确性。该模型为X射线成像系统空间分辨率和密度分辨率的初步设计和评定提供了理论依据,可作为X射线图像恢复算法中模糊函数的先验信息。