CsBr高压X光研究

 采用同步辐射X光源和能散法，对CsBr粉末样品进行高压原位X光衍射实验。由金刚石对顶压砧高压装置（DAC）产生高压，用已知状态方程的Pt粉末作内标，由Pt的衍射数据确定样品压力，最高压力达64.4 GPa。实验结果表明：室温常压下原始CsBr样品是具有简单立方结构的晶体，其晶格常数α＝0.428 5 nm。高压下CsBr的结构有所变化，在51.3~58.4 GPa的压力范围内，(110)线和(211)线发生劈裂，从而形成了四方相。     

一些高Tc超导体的弹性性质

 本文用超声相比较方法测定了高T_c超导体La_1.85Sr_0.15CuO₄，La₂CuO₄和YBa₂Cu₃O₇的纵波和横波声速，进而导出了它们的纵向模量、切变模量、杨氏模量、泊松比、德拜温度及定体比热。在La_1.85Sr_0.15CuO₄样品上，还进行了压力实验，发现所有弹性模量都是随压强增加而增加。定体比热c_V和泊松比σ在高压下则略有下降。德拜温度是随压强增加而增加的。     

Search for a precursor crystal-to-crystal phase transition to amorphization in α-GeO2 and α-AlPO4 under pressure

Recent X-ray diffraction studies on α-quartz (SiO₂) by Kingmaet al [1], have shown the occurrence of a reversible, crystalline-to-crystalline, phase transition just prior to amorphization at ≈ 21 GPa. This precursor transition has also been confirmed by our recent molecular dynamics simulation study [2]. In order to investigate the possibility of a similar behaviour in other isostructural compounds, which also undergo pressure induced amorphization, α-GeO₂ and α-AlPO₄ (berlinite form) were studied using energy dispersive X-ray diffraction. In either of these materials, no such phase transition is detected prior to amorphization. The onset of amorphization and its reversal is found to be time dependent in GeO₂.     

Simple Constructions of Almost k-wise Independent Random Variables

We present three alternative simple constructions of small probability spaces on n bits for which any k bits are almost independent. The number of bits used to specify a point in the sample space is (2 + o(1)) (log log n + k/2 + log k + log 1/?), where ? is the statistical difference between the distribution induced on any k bit locations and the uniform distribution. This is asymptotically comparable to the construction recently presented by Naor and Naor (our size bound is better as long as ? < 1/(k log n)). An additional advantage of our constructions is their simplicity.     

A New Flow Instrument for Conductance Measurements at Elevated Temperatures and Pressures: Measurements on NaCl(aq) to 458 K and 1.4 MPa

A new flow electrical conductance instrument was constructed and tested on dilute NaCl solutions up to 458 K, and on more concentrated solutions (maximum 0.436 mol⋅kg⁻¹) at 373 K. The results of the new instrument agreed with those of previous authors within the estimated experimental errors. The model of Bernard et al. (J. Phys. Chem. 96, 3833–3840 (1992), MSA) was found to represent the high-temperature results without introducing an ion-pairing equilibrium constant. The Fuoss–Hsia conductance equation as given by Fernandez-Prini was found to represent the dilute concentrations with Λ° (NaCl) as the only adjustable parameter. It was found that Λ° (NaCl) could be expressed as a function of solvent viscosity and density by using three parameters found by regression of literature results between 278.15 and 523 K. This equation along with the FHFP theory permits the equivalent conductivity of dilute sodium chloride solutions to be calculated within the accuracy of the existing experimental measurements.     

Conservation Laws of K(m, n) and mK(m, n) Equations

Based on the rank analysis method, algorithmization idea, and symbolic computation, in this paper we have presented a method to construct the conservation laws for nonlinear evolution equations. The polynomial conservation laws for K (n 2, n) equations and mnK(m, n) equations are found by using of this approach and some new results have been obtained.     

基于三维矩阵重构争论有向图的域间路由振荡检测算法

边界网关协议(Border G atew ay P rotoco l,BGP)是当前In ternet域间路由协议的事实标准,基于策略的路由选择过程使它不再是严格意义上的距离矢量协议,也不再具有距离矢量协议的收敛性.V aradhan指出,自治系统各自为政的策略配置方式会导致全局策略冲突,引起永久性的路由振荡.针对该问题,G riffin利用稳定路径问题(S tab le Path P rob lem,SPP)模型形式化的抽象出BGP协议行为,并以此为基础提出了一种分布式的策略冲突检测算法,尽管该算法完全避免了传统方法的缺陷,但仍然存在泄漏策略信息和对BGP协议改动太大以及浪费网络资源的问题.本文提出了一种基于安全多方计算的检测路由策略冲突的方法,用于在怀疑BGP路由发生振荡时,动态的检测系统中是否存在策略冲突.该方法采纳了G riffin的理论基础,同时由于巧妙的运用了安全多方计算协议,可以完全解决G riffin算法的问题,具有很好的实用性.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Measurement and prediction of solubilities and diffusion coefficients of carbon dioxide in starch–water mixtures at elevated pressures

The solubility and diffusion coefficient of carbon dioxide in intermediate‐moisture starch–water mixtures were determined both experimentally and theoretically at elevated pressures up to 16 MPa at 50 °C. A high‐pressure decay sorption system was assembled to measure the equilibrium CO₂ mass uptake by the starch–water system. The experimentally measured solubilities accounted for the estimated swollen volume by Sanchez–Lacombe equation of state (S‐L EOS) were found to increase almost linearly with pressure, yielding 4.0 g CO₂/g starch–water system at 16 MPa. Moreover, CO₂ solubilities above 5 MPa displayed a solubility increase, which was not contributed by the water fraction in the starch–water mixture. The solubilities, however, showed no dependence on the degree of gelatinization (DG) of starch. The diffusion coefficient of CO₂ was found to increase with concentration of dissolved CO₂, which is pressure‐dependent, and decrease with increasing DG in the range of 50–100%. A free‐volume‐based diffusion model proposed by Areerat was employed to predict the CO₂ diffusivity in terms of pressure, temperature, and the concentration of dissolved CO₂. S‐L EOS was once more used to determine the specific free volume of the mixture system. The predicted diffusion coefficients showed to correlate well with the measured values for all starch–water mixtures. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 607–621, 2006     

Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.