Atomic structure of InAs quantum dots on GaAs

In recent years, the self-assembled growth of semiconductor nanostructures, that show quantum size effects, has been of considerable interest. Laser devices operating with self-assembled InAs quantum dots (QDs) embedded in GaAs have been demonstrated. Here, we report on the InAs/GaAs system and raise the question of how the shape of the QDs changes with the orientation of the GaAs substrate. The growth of the InAs QDs is understood in terms of the Stranski–Krastanow growth mode. For modeling the growth process, the shape and atomic structure of the QDs have to be known. This is a difficult task for such embedded entities.

In our approach, InAs is grown by molecular beam epitaxy on GaAs until self-assembled QDs are formed. At this point the growth is interrupted and atomically resolved scanning tunneling microscopy (STM) images are acquired. We used preparation parameters known from the numerous publications on InAs/GaAs. In order to learn more about the self-assemblage process we studied QD formation on different GaAs(0 0 1), (1 1 3)A, and ( )B substrates. From the atomically resolved STM images we could determine the shape of the QDs. The quantum “dots” are generally rather flat entities better characterized as “lenses”. In order to achieve this flatness, the QDs are terminated by high-index bounding facets on low-index substrates and vice versa. Our results will be summarized in comparison with the existing literature.     

利用压电频移法测定水中的痕量亚硝酸盐

提出了利用压电频移法测定亚硝酸盐的方法。方法以碘离子与亚硝酸根之间的氧化还原反应为依据，通过测定由反应生成的碘所引起的压电晶体频率的变化，在被萃取水相中亚硝酸盐浓度为０．００９￣２．３ｍｇ／Ｌ范围内，频移值与浓度成正比：ΔＦ＝５．８＋２．５×１０＾３Ｃ（ｍｇ／Ｌ），ｒ＝０．９９０１。方法简便，用于天然水中亚硝酸盐的测定，结果令人满意。     

光解碎片平动谱中二级过程的运动学及化学动力学

本文发展了一套分析处理分子束光解反应实验中二级分解产物飞行谱的方法, 它改进了Kroger和Riley的最初讨论。本文表明许多重要的信息都可以从高度平均的实验数据中得出。这包括二级分解产物的平均平动能分布、空间各向异性参数、平行竞争通道间的反应比。模拟的结果可以表现二级分解反应的一些主要特征。     

水热法合成K0.5Bi0.5TiO3纳米陶瓷粉体

K_0.5Bi_0.5TiO₃(KBT)nanocrystalline particles were hydrothermally synthesized from Bi(NO₃)₃·5H₂O, TiO₂ and KOH. The crystal phase, chemical composition and microstructure were characterized by XRD, XRF, Raman scattering spectroscopy and TEM. The results indicated that the products were pure perovskite structured K_0.5Bi_0.5TiO₃ with chemical stoichiometry and perovskite structure. The TEM observation revealed that the particles possessed a feature of cubic shape and a nano-scale of about 40 nm. The KBT ceramics sintered at 1 040 ℃ from hydrothermal powders show higher density and better electric properties than that prepared by a solid-state reaction method.     

Mechanism of azole antifungal activity as determined by liquid chromatographic/mass spectrometric monitoring of ergosterol biosynthesis

A liquid chromatography/mass spectrometry (LC/MS) method for separation and characterization of ergosterol biosynthetic precursors was developed to study the effect of Posaconazole on sterol biosynthesis in fungi. Ergosterol biosynthetic precursors were characterized from their electron ionization mass spectra acquired by a normal-phase chromatography, particle beam LC/MS method. Fragment ions resulting from cleavage across the D-ring and an abundant M - 15 fragment ion were diagnostic for methyl substitution at C-4 and C-14. Comparison of the sterol profile in control and treated Candida albicans incubations showed depletion of ergosterol and accumulation of C-4 and C-14 methyl-substituted sterols following treatment with Posaconazole. These C-4 and C-14 methyl sterols are known to be incapable of sustaining cell growth. The results demonstrate that Posaconazole exerts its antifungal activity by inhibition of ergosterol biosynthesis. Furthermore, Posaconazole appears to disrupt ergosterol biosynthesis by inhibition of lanosterol 14alpha-demethylase.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

直流放电制备CN自由基及其LIF探测

CN自由基是研究化学反应动力学的典型自由基，CN的动力学行为，如CN＋O2的反应已成为研究自由基－自由基反应的模型体系[1]，同时也在许多实际过程如燃烧过程，星际气体的形成过程中起着重要的作用[2，3]．利用含有CN的化合物进行光解、放电、与亚稳态原子分子进行传能反应是目     

Structural and Chemical Analysis of Materials with High Spatial Resolution

 An understanding of the correlation between microstructures and properties of materials require the characterization of the material on many different length scales. Often the properties depend primarily on the atomistics of defects, such as dislocations and interfaces. The different techniques of transmission electron microscopy allow the characterization of the structure and of the chemical composition of materials with high spatial resolution to the atomic level: high resolution transmission electron microscopy allows the determination of the position of the columns of atoms (ions) with high accuracy. The accuracy which can be achieved in these measurements depends not only on the instrumentation but also on the quality of the transmitted specimen and on the scattering power of the atoms (ions) present in the analyzed column. The chemical composition can be revealed from investigations by analytical microscopy which includes energy dispersive X-ray spectroscopy, mainly quantitatively applied for heavy elements, and electron energy-loss spectroscopy. Furthermore, the energy-loss near-edge structure of EELS data results in information on the local band structure of unoccupied states of the excited atoms and, therefore, on bonding. A quantitative evaluation of convergent beam electron diffraction results in information on the electron charge density distribution of the bulk (defect-free) material. The different techniques are described and applied to different problems in materials science. It will be shown that nearly atomic resolution can be achieved in high resolution electron microscopy and in analytical electron microscopy. Recent developments in electron microscopy instrumentation will result in atomic resolution in the foreseeable future.     

Mass spectrometric diagnosis of the surface nitriding mechanism in a d.c. glow discharge

Reactive constituents have been investigated in a molecular beam generated in the cathode surface glow area and surface boundary layer. Mixtures of nitrogen and hydrogen form NH_x(x=0–4) compounds, which are of relevance in heterogeneous, plasma vs. metal nitriding reactions. Ammonia decomposition leads to NH_x(x=2–4). Strong cataphoretic enrichment of hydrogen has been observed in the cathode glow area. Heterogeneous reactions of NH_x with iron lead to the formation of iron nitrides via intermediates such as FeNH_2–3. In a pulsed d.c. glow discharge, increased sputtering and decreased hydrogen enrichment have been observed.     

曲边区域上的多边形网格间断有限元离散及其多重网格算法

本文利用多边形网格上的间断有限元方法离散二阶椭圆方程,在曲边区域上,采用多条直短边逼近曲边的以直代曲的策略,实现了高阶元在能量范数下的最优收敛.本文还将这一方法用于带曲边界面问题的求解,同样得到高阶元的最优收敛.此外我们还设计并分析了这一方法的\linebreakW-cycle和Variable V-cycle多重网格预条件方法,证明当光滑次数足够多时,多重网格预条件算法一致收敛.最后给出了数值算例,证实该算法的可行性并验证了理论分析的结果.