合肥光源二分割三角型光位置检测器的研制

介绍了一种用于合肥光源的二分割三角型光位置检测器的研制,对其主要性能(如灵敏度和线性范围)进行了理论分析和实际测量,测量结果与理论分析相当吻合.文中还给出了光位置测量系统的组成     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

三级近似束流光学计算程序

为了精确计算束流在离子光学系统中的传输,用Visual FORTRAN 6.5语言编写了一个计算程序,长约13000行. 此程序可以计算由三圆筒单透镜、三膜片单透镜、双元筒透镜、均匀场静电加速管、磁四极透镜、六极磁铁、静电四极透镜、偏转磁铁、螺线管透镜、ExB~正交电磁场分析器、静电偏转器、漂浮管、QWR(Quarter Wave Resonators)和SLR(Split Loop Resonators)射频加速元件等元件任意组成的离子光学系统. 粒子轨迹的计算可精确到三级近似. 粒子的分布类型也可以有多种选择. 程序具有最优化计算功能,即可以自动调整元件的参数,以实现所需要的光学条件. 各元件之后的横向和纵向相图以及系统的束流包络线以图形方式显示在屏幕上.     

直线加速器驻波腔中的瞬态束流负载效应

在高能加速器中, 随着单个束团和束团串中电荷量的提高, 当粒子束穿过加速腔的时候, 感应出的瞬态束流负载电压也越来越高. 但是, 在通常分析束流负载的时候, 往往对稳态束流负载研究的比较多, 而对瞬态束流负载的研究要相对少一些. 本文首先对束流负载的瞬态特性和束团穿过加速腔时高频源所看到谐振腔谐振频率的变化方式进行了分析, 然后又对两种情况下谐振腔的最优失谐条件进行了讨论, 并给出了相应的解析公式. 在第1种情况下, 当粒子束穿过加速腔的时候, 谐振腔的自然谐振频率能够及时地得到调节, 从而使高频源的电流与谐振腔的腔压同相, 以提高高频源的效率; 在第2种情况下, 当粒子束穿过加速腔的时候, 谐振腔的自然谐振频率保持不变, 不能被调节. 最后, 还对BEPCⅡ现有预注入器的预聚束腔、BEPCⅡ未来预注入器的两个次谐波聚束腔中的瞬态束流负载效应进行了分析.     

Beam Combination using Stimulated Brillouin Scattering for the Ultimate High Power-Energy Laser System Operating at High Repetition Rate over 10 Hz for Laser Fusion Driver

After the laser was invented in 1960, a phase conjugation mirror has been respected to be the most fantastic one for the laser resonator composition because it can compensate any distortions of the laser beams occurred by the many inhomogenuities of the laser media and optical components. Among the many phase conjugation configurations, the stimulated Brillouin scattering phase conjugation mirror is the most simple one and many researchers have tried to utilize it to develop high power/energy laser systems. For realizing a high energy/power laser system the thermal problem is the most difficult to solve, and some researchers suggested a beam combination technique to reduce the thermal load of the big laser media to many small sized ones. To accomplish the beam combination using stimulated Brillouin scattering phase conjugation mirrors (SBS-PCMs), it is necessary to lock/control the phases of the SBS-PCMs. And some researchers have developed several ways for it, but they can lock the phases of a limited number of beams overlapped at the foci less than 5, or lock the phases by back-seeding technique but it loses the phase conjugation characteristics. For realization of the laser fusion driver, it is necessary to combine more than 10 or 100 beams. And the authors have developed recently a new phase controlling/locking technique which is isolated and independent totally from other beams and it can be applied to an unlimited number of beams in principle.     

Smaller Output Beam Divergence in the Slowly Opened Q-Switch Operation

The mechanism of the slowly opened Q-switch operation was investigated thoroughly. Maximum energy extraction from the resonator could be optimized, and the smallest output beam divergence could be achieved. In this article, we present a detailed analysis that has numerically verified the mode-selection mechanism in the slowly opened Q-switch operation, and the degree of the smaller output laser beam divergence that has been achieved. The mechanism of the slowly opened Q-switch operation is the inherent advantage of the passive saturable absorber in this operation. We can use the maximum energy extraction and the smallest output beam divergence results of the slowly opened Q-switch operation to design and optimize various passive saturable absorbers: plastic dye sheets, LiF:F₂⁻ color center crystals, Cr4⁺: YAG crystals, RG1000 color glass filters, and the single crystal semiconductor saturable absorber wafers that are in developed in our microchip laser systems.     

Evaluation of piezoelectric PVDF polymers for use in space environments. III. Comparison of the effects of vacuum UV and gamma radiation

Films of piezoelectric PVDF and P(VDF‐TrFE) were exposed to vacuum UV (115–300 nm VUV) and γ‐radiation to investigate how these two forms of radiation affect the chemical, morphological, and piezoelectric properties of the polymers. The extent of crosslinking was almost identical in both polymers after γ‐irradiation, but surprisingly, was significantly higher for the TrFE copolymer after VUV‐irradiation. Changes in the melting behavior were also more significant in the TrFE copolymer after VUV‐irradiation due to both surface and bulk crosslinking, compared with only surface crosslinking for the PVDF films. The piezoelectric properties (measured using d₃₃ piezoelectric coefficients and D‐E hysteresis loops) were unchanged in the PVDF homopolymer, while the TrFE copolymer exhibited more narrow D‐E loops after exposure to either γ‐ or VUV‐radiation. The more severe damage to the TrFE copolymer in comparison with the PVDF homopolymer after VUV‐irradiation is explained by different energy deposition characteristics. The short wavelength, highly energetic photons are undoubtedly absorbed in the surface layers of both polymers, and we propose that while the longer wavelength components of the VUV‐radiation are absorbed by the bulk of the TrFE copolymer causing crosslinking, they are transmitted harmlessly in the PVDF homopolymer. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3253–3264, 2006     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

ELECTRON GUN FOR LARGE ORBIT GYROTRON (LOG) WITH DECREASED INFLUENCE OF CATHODE PLASMA ON ELECTRON BEAM PROPERTIES

High power Large Orbit Gyrotron (LOG) [1] is now under development at FIR FU. First version of this device was recently manufactured and then assembled with power supply ETIGO-IV [2]. Results of preliminary tests of electron-optic system are presented. The conditions when stableflat form of current pulse realized are discussed. Analytical estimations of cathode-anode distance to achieve small influence of cathode plasma during high voltage (HV) pulse are performed. Two new electron gun versions with decreased influence of the cathode plasma on its impedance and pulse form are suggested and optimized. New optimal magnetic field distributions are found. First gun has quiasi-flat cathode configuration near the anode diaphragm and provides operating current about 60 A. Second one uses blade cathode with operating current about 30 A. Beam quality for both guns is suitable for LOG operation.     

利用低能质子束产生高强度放射性束流

加拿大TRIUMF实验室利用¹¹C成功验证了一种产生高强度(～10⁸ions/s)放射性束流的方法. 该方法不同于普通在线同位素分离方法, 它利用了13MeV的低能强流质子束, 可以产生一系列核天体物理实验感兴趣的高强度放射性束流.