Formation of niobium oxynitrides by rapid thermal processing (RTP)

The potential of rapid thermal processing (RTP) for the preparation of thin films of niobium oxynitrides was investigated. The 200 and 500 nm niobium films were deposited via sputtering on oxidized silicon(1 0 0)- and on sapphire(1 −1 0 2)-substrates. At first, oxidation of niobium films in molecular oxygen and then nitridation in ammonia using an RTP-system was performed. The films were characterized before and after the oxidation and nitridation processes by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and secondary ion mass spectrometry (SIMS). The influence of the two different substrates, amorphous SiO₂ and single crystalline sapphire on the reactivity of the niobium films was studied in dependence of temperature, time of reaction and film thickness. The existence of niobium oxynitride formation was verified for some of the films. In some of the experiments, crack formation in the films or even delamination of the Nb-films from the substrates was observed.     

Measurement of underground motion at the SSRF site

For the Shanghai Synchrotron Radiation Facility (SSRF) and future Shanghai Free‐Electron Laser projects, ground vibration is an important factor and, in order to attenuate it, the construction of a deep tunnel is under consideration. This paper concentrates on the investigation of ground vibration at different underground levels down to 60 m below surface, in order to understand the effect of vibration attenuation with depth. The effect of traffic is also studied using a 10 ton truck, with ground motion compared in different directions. Finally, a summary and some suggestions on these two projects are given.     

Molecular depth profiling of organic and biological materials

Atomic depth profiling using secondary ion mass spectrometry, SIMS, is common in the field micro-electronics; however, the generation of molecular information as a function of sample depth is difficult due to the accumulation of damage both on and beneath the sample surface. The introduction of polyatomic ion beams such as SF₅ and C₆₀ have raised the possibility of overcoming this problem as they deposit the majority of their energy in the upper surface of the sample resulting in increased sputter yields but with a complimentary reduction in sub-surface damage accumulation. In this paper we report the depth profile analysis of the bio-polymer polycaprolactone, PCL, using the polyatomic ions and and the monoatomic Au⁺. Results are compared to recent analysis of a similar sample using . depth profiling of cellulose is also demonstrated, an experiment that has been reported as unsuccessful when attempted with implications for biological analysis are discussed.     

SIMS of organic layers with unknown matrix parameters: Locating the interface in dual beam argon gas cluster depth profiles

Four simple methods are evaluated to determine their accuracies for establishing the interface location in secondary ion mass spectrometry intensity depth profiles of organic layers where matrix effects have not been measured. Accurate location requires the separate measurement of each ion's matrix factor. This is often not possible, and so estimates using matrix-less methods are required. Six pure organic material interfaces are measured using many secondary ions to compare their locations from the four methods with those from full evaluation with matrix terms. For different secondary ions, matrix effects cause the apparent interface positions to vary over 20 nm. The shifts in the intensity profiles on going from a layer of P into a layer of Q are in the opposite direction to that for going from Q into P, so doubling layer thickness errors. The four methods are as follows: M1, use of the median interface position in the intensity profiles for the five lightest ions for 15 ≤ m/z ≤ 150; M2, extrapolation of the position for each ion to m/z = 0 for ions with m/z ≤ 150; M3, as M2 but for m/z ≤ 300; and M4, the extreme positions for all m/z ≤ 100. Comparison with the location using matrix terms shows their ranking, from best to worst, to be M4, M3, M1, and M2 with average errors of 10%, 12%, 14%, and 17%, respectively, of the profile interface full widths at half maximum. Use of pseudo-molecular ions is very much poorer, exceeding 50%, and should be avoided.     

Quantitative Depth Profiling Using Online-Laser Ablation of Solid Samples in Liquid (LASIL) to Investigate the Oxidation Behavior of Transition Metal Borides

The increased demand for sustainability requires, among others, the development of new materials with enhanced corrosion resistance. Transition metal diborides are exceptional candidates, as they exhibit fascinating mechanical and thermal properties. However, at elevated temperatures and oxidizing atmospheres, their use is limited due to the fact of their inadequate oxidation resistance. Recently, it was found that chromium diboride doped with silicon can overcome this limitation. Further improvement of this protective coating requires detailed knowledge regarding the composition of the forming oxide layer and the change in the composition of the remaining thin film. In this work, an analytical method for the quantitative measurement of depth profiles without using matrix-matched reference materials was developed. Using this approach, based on the recently introduced online-LASIL technique, it was possible to achieve a depth resolution of 240 nm. A further decrease in the ablation rate is possible but demands a more sensitive detection of silicon. Two chromium diboride samples with different Si contents suffering an oxidation treatment were used to demonstrate the capabilities of this technique. The concentration profiles resembled the pathway of the formed oxidation layers as monitored with transmission electron microscopy. The stoichiometry of the oxidation layers differed strongly between the samples, suggesting different processes were taking place. The validity of the LASIL results was cross-checked with several other analytical techniques.     

黏惰化及酸敏感修饰对纳米粒子黏膜穿透的影响

使用纳米粒子进行疾病的诊断和治疗是当前研究的一个热点. 由于受到黏液层的阻碍, 纳米粒子对于黏膜上皮细胞的进入效果不佳, 从而限制了其对黏膜相关疾病的诊断和治疗. 本文设计合成了一种具有黏惰性的酸敏感纳米粒子(MSNs-pCBMA-DMMA), 可有效穿透黏液层进入黏膜上皮细胞. 首先采用溶胶-凝胶法合成了表面氨基化的介孔二氧化硅纳米粒子(MSNs-NH₂), 然后通过原子转移自由基聚合法(ATRP)使两性离子羧基甜菜碱甲基丙烯酸酯(CBMA)在MSNs-NH₂表面上聚合形成聚羧基甜菜碱甲基丙烯酸酯(pCBMA), 获得惰性化的粒子(MSNs-pCBMA), 最后将酸响应性分子2,3-二甲基马来酸酐(DMMA)修饰于MSNs-pCBMA表面, 制备了MSNs-pCBMA-DMMA. 场发射透射电子显微镜(TEM)、 傅里叶变换红外光谱(FTIR)、 氢核磁共振波谱(¹H NMR)和纳米粒度Zeta电位测定仪等分析结果表明, 本文合成了MSNs-pCBMA-DMMA, 且粒子表面电位随pH值降低显著增加, 在pH=7.4~5.7范围内具有酸敏感能力. Transwell^?小室实验表明, pCBMA的接枝提高了粒子在模拟黏液中的渗透速率, 而DMMA的修饰则进一步增强了粒子的扩散能力, 4 h内MSNs-pCBMA-DMMA的模拟黏液渗透率达到16.3%, 为MSNs-pCBMA的1.9倍, MSNs-NH₂的3倍, 而以MSNs-NH₂的表观渗透系数（P_app）为标准计算得到的MSNs-pCBMA-DMMA的相对表观渗透系数达到了2.96. 细胞毒性试验验证MSNs-pCBMA-DMMA粒子的生物安全性良好. 细胞摄取试验表明, 相比于其它粒子MSNs-pCBMA-DMMA能够更快的被黏膜上皮细胞摄取. 本文所构建的纳米粒子能够快速渗透黏液且易于被黏膜上皮细胞摄取, 为其应用于黏膜相关疾病的活体诊断和治疗提供了基础.     

Eco-dyeing and functional finishing of wool fabric based on Portulaca oleracea L. as colorant and Musa basjoo as natural mordant

Biomass energy is the most acknowledged renewable resource due to its universality, richness, and renewability. This study utilized a Portulaca oleracea L. plant as a natural colorant for wool fabric dyeing with a high color yield at optimum extraction and dyeing conditions. To evaluate the dyeing mechanism and feasibility of the extracted dyes, we analyzed and characterized the molecular structure and nano-level particle size. The dyeing kinetics and the morphology of dyed fabrics were integratedly explored; the adsorption process of wool fabric on natural colorant molecules was increasingly in line with the pseudo-second-order kinetic adsorption model. Further, the dyeing effects of wool fabrics were compared to that of Musa basjoo mordant and synthetic dyes to confirm the superior color depth (K/S value 23.53), biological function as anti-ultraviolet (UPF value 253.47), and anti-bacterial activity (antibacterial rate of Staphylococcus aureus/Escherichia coli was 71.3%/37%). Our findings provide a feasible scheme for providing deep color and biological activity to wool fabrics. This has broad application prospects in the field of eco-friendly textile materials.     

Behavior and process of background signal formation of hydrogen,carbon, nitrogen,and oxygen in silicon wafers during depth profiling using dual-beam TOF-SIMS

The behavior and mechanism of background signals during depth profiling of atmospheric elements using dual-beam time-of-flight secondary ion mass spectrometry (TOF-SIMS) have been experimentally investigated for silicon wafers. The background signals of atmospheric elements were found to be inversely proportional to the sputtering rate. Most of the background signals are largely attributable to the accumulation of components through adsorption and ion bombardment in the pre-equilibrium state. On the other hand, the contribution of real-time adsorption during the instant after the last sputtering in the equilibrium state is negligible under the present experimental conditions. H₂O is dominant in the background formation process of hydrogen and oxygen, which is supported by the higher adsorption coefficients. The background levels of carbon and nitrogen are lower than those of hydrogen and oxygen. Furthermore, the background signal of carbon with respect to the sputtering rate shows a different trend than the other elements. This could be attributed to accumulation in the pre-equilibrium state. These results indicate that the background levels can be lowered close to those of dynamic-SIMS by using an extremely high sputtering rate in dual-beam TOF-SIMS.     

Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method

Depth profiles of Ga₂O₃/a-SiO₂/Al₂O₃- substrate, Ga₂O₃/a-Si₃N₄/Al₂O₃- substrate, and Ga₂O₃/Al₂O₃ substrate thin layers were determined by the SNMS/HFM method. Al diffusion from the Al₂O₃ substrate was investigated after 50, and in some cases after 600 hours of heat treatment time at different temperatures (600 °C,850 °C,950 °C,1050 °C and 1150 °C). The diffusion coefficient of Al at 850 °C was found to be D _Al=8.7 * 10^–18 cm²/s in amorphous SiO₂; D _Al=1.5*10^–17 cm²/s in amorphous Si₃N₄ and D _Al=5.5* 10^–16 cm²/s in Ga₂O₃ at 600 °C, respectively. The possible diffusion mechanism is explained in terms of the metal-oxygen bond-strengths. Although the studied materials have high resistivity at room temperature, the applied SNMS/HFM method has proven to be an efficient surface analytical tool even in these cases.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Interpretation of Auger depth profiles of thin SiC layers on Si

Silicon carbide thin films, prepared by carbonization of Si-wafers are analysed by Auger depth profiling. The influence of atomic mixing is simulated with a Monte Carlo model. By using mixing simulations the dependence of the two mixing parameters (width of the mixing zone and recoil depth) on ion beam energy, incidence angle and ion mass can be calculated. For comparison of the simulated data with Auger measurements an Auger electron escape depth correction is necessary. The simulated and -corrected data of several layer structures show good qualitative agreement with Auger depth profiles of thin carbonized SiC-layers.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday