The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current （/ON）, but has little effect on the hole mobility. The/ON is degraded by the surface roughness scattering in both strained and unstrained devices.     

碳纳米管应变传感测量与偏振拉曼控制方法研究

面向微尺度平面变形的精细测量对碳纳米管应变传感测量方法进行了理论与实验研究。利用碳纳米管的拉曼应变敏感性及其偏振选择性,针对各种典型的拉曼光谱系统偏振构型,推导建立了适于各种偏振拉曼构型的碳纳米管平面应变传感解析关系式。从测量学角度出发,对不同偏振构型下的应变传感进行了对比分析,得出入射与散射光偏振方向皆能够连续控制且始终保持平行的双偏协同构型最适合于平面应变传感,并进一步提出易于实现的双偏协同构型光路配置方式与控制方法。通过实验应用证明,所提出的方法能够有效的实现基于偏振拉曼的碳纳米管平面应变传感测量。     

面外应变对1-3型垂直异质P(VDF-TrFE)基复合薄膜电热性能的调控

考虑1-3型垂直异质铁电P（VDF-TrFE）基复合薄膜结构,利用非线性的热力学理论分析和讨论了平面外应变对复合薄膜电热性能的调控作用. 结果表明,在施加的垂直电场下,平面外应变可以有效地调控电极化、热释电系数、绝热温差等铁电、电热性能. 通过合理的调控平面外应变可以在很大的温度区域范围内获得比纯平面外延薄膜结构更高的绝热温差. 研究结果预示着垂直异质P（VDF-TrFE）基复合薄膜结构在一定的工作温度范围内具有优异的电热性能,在微电源、光通信二极管、红外传感器等微型元件方面有着广泛的应用前景. 关键词： 电热效应 平面外应变 P(VDF-TrFE)复合薄膜 绝热温差     

Fabrication of high quality chirped fiber Bragg grating by establishing strain gradient

To fabricate chirped fiber Bragg grating (CFBG) with high reflectivity and accurately controlled chirp profile with low cost, we develop the CFBG fabrication technique based on strain gradient: fabricating CFBG using fabricated fiber Bragg grating (FBG) by establishing strain gradient along the length of grating. We theoretically analyze the form of such CFBGs, and study the characteristics of gratings using piecewise-uniform approach. It is shown that increasing UV-induced index change or the length of the grating or both are the efficient ways to obtain high quality CFBG with high reflectivity and good reflection spectrum. The dispersion of this grating is decided by and varies inversely with the slope of the strain gradient along the length of the grating, not decided by UV-induced index change or by the length of grating. One can control the dispersion and the chirp profile by adjusting the slope of the strain gradient. Based on the theoretical analysis, we have fabricated CFBG whose reflectivity is maintained at 100% in a large range of strain gradients.     

Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.     

形变多晶氧化铝纤维的荧光R谱线

使用自制拉伸装置和显微拉曼系统测定了形变下多晶氧化铝纤维的荧光R1和R2谱线,发现两条谱线均随纤维拉伸应变的增大而变宽,并获得了纤维应变与谱线宽化值之间的定量关系。从纤维的结晶晶格结构和形态学微结构定性地解释了谱线的宽化行为。也测定了谱线频率与多晶氧化铝纤维温度间的定量关系,频率温度系数值近似等同于单晶氧化铝的值。最后,研究了激发光偏振方向相对于纤维轴向的不同夹角对谱线频率的影响,并由此得出,氧化铝晶粒有相对纤维轴向取向的倾向。     

Molecular dynamics simulations of structural disordering and forming defects in a milling process for selenium

In our previous paper, structural changes of selenium powders ground by a planetary ball mill at various rotational speeds were investigated for the nanostructural modification of particles using mechanical grinding process. The experimental results indicated that the amorphisation of Se by grinding accompanies lattice strain, and the lattice strain arises from impact energy which is more than an energy related to intermolecular interaction. In this paper, molecular dynamics simulations of selenium have been carried out under compressing conditions of various pressure strengths for obtaining information of the lattice strain at atomic level. Then, dynamical behaviour of atomic configuration has been discussed in this process. The structural disordering and formation of the structural defects were estimated by deviations of bond length and angle and the number of created defects before and after compressing from simulated results. The disordering took place during compressing at various pressure strengths, and the disordered atoms return to their initial positions at lower pressure. Stable disordered state and defects after the compression can however remain by compression at more than a certain pressure strength mainly associated with binding energy of selenium.     

基于SiPM和TCMPC的时间分辨拉曼散射测量技术研究

报道了一种基于硅光电信增管(SiPM)的时间相关多光子计数(TCMPC)技术并将其应用于时间分辨拉曼散射测量。相比于常规基于光电倍增管(PMT)或单光子雪崩二极管(SPAD)的时间相关单光子(TCSPC)技术,由于SiPM可以分辨信号脉冲的具体光子数,基于SiPM的TCMPC技术消除了信号脉冲包含的光子数必须小于等于1的限制,光子计数效率提高了10倍以上,大大节省了测量时间。此外,多光子测量比单光子测量能够得到更好的时间分辨率,时间分辨拉曼散射系统的仪器响应函数(IRF)从单光子81.4 ps缩短至双光子59.7 ps,因而可以用更窄的时间门限抑制荧光本底等噪声对拉曼散射测量的影响。使用TCMPC技术测量CCl₄在0.5和1.5 p.e.两个不同光子数阈值的拉曼峰的峰本比,后者较高的光子数阈值能进一步降低SiPM暗计数噪声的影响,增加了拉曼信号测量的信噪比,测量得到的CCl₄ 459 cm-1拉曼峰的峰本比是前者的6.4倍。将所述新的拉曼散射测量技术与基于PMT和锁相放大器(LIA)的传统拉曼散射测量技术进行了比较研究,前者由于可以使用仅有数十皮秒的测量门限,可以有效抑制荧光、环境杂散光和SiPM暗计数等噪声的影响,所得光谱具有更好的峰本比,测得CCl₄的459 cm-1拉曼峰和Si的一阶拉曼峰的峰本比分别是后者的3.9倍和5.5倍。     

蓝宝石衬底上GaN/AlxGa1-xN超晶格插入层对AlxGa1-xN外延薄膜应变及缺陷密度的影响

室温300K下,由于Al_xGa_1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以Al_xGa_1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分Al_xGa_1-xN材料生长的一大困难就是Al_xGa_1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的Al_xGa_1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/Al_xGa_1-xN超晶格插入层技术是释放应力和减少Al_xGa_1-xN薄膜中缺陷的有效方法.研究了GaN/Al_xGa_1-xN超晶格插入层对GaN/蓝宝石上Al_xGa_1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,Al_xGa_1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.Al_xGa_1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al_0.3Ga_0.7N超晶格,研究发现随着超晶格周期厚度的增加Al_xGa_1-xN外延薄膜缺陷密度降低,Al_xGa_1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al_0.3Ga_0.7N超晶格插入层Al_xGa_1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层使Al_xGa_1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了Al_xGa_1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层导致Al_xGa_1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变.     

峰值能量检测及其在被动声纳显示中的应用

本文介绍子带峰值能量检测方法及其在被动声纳显示和检测中的应用[2-4]，同时提出了波束域宽带峰值能量检测算法。新的波束域算法是在已有波束形成的基础上进行处理，不需对原系统进行较大的修改。通过波束域宽带峰值能量检测处理，可以改善声纳显示效果，更加清晰地显示目标方位。相对于高分辨率波束形成算法，两种峰值能量检测算法的运算量都比较低，具有一定的工程应用前景。通过计算机仿真和实测数据处理，验证了所述两种峰值能量算法在提高显示清晰度，减小测向模糊度方面的优点。