First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

Sulfur doping of AlN and AlGaN for improved n‐type conductivity

Achieving high levels of n‐type conductivity in AlN and high Al‐content nitride alloys is a long standing problem; significant decreases in conductivity are observed as the Al content is increased, a phenomenon that has been attributed to donors such as oxygen or silicon forming DX centers. We address this problem through a comprehensive first‐principles hybrid density functional study of potential n‐type dopants, identifying S_N and Se_N as two elements which are potential shallow donors because they do not undergo a DX transition. In particular, S_N is highly promising as an n‐type dopant because it also has a low formation energy and hence a high solubility. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Trends in ultrashort and ultrahigh power laser pulses based on optical parametric chirped pulse amplification

Since the proof-of-principle demonstration of optical parametric amplification to efficiently amplify chirped laser pulses in 1992,optical parametric chirped pulse amplification(OPCPA)became the most promising method for the amplification of broadband optical pulses.In the meantime,we are witnessing an exciting progress in the development of powerful and ultrashort pulse laser systems that employ chirped pulse parametric amplifiers.The output power and pulse duration of these systems have ranged from a few gigawatts to hundreds of terawatts with a potential of tens of petawatts power level.Meanwhile,the output pulse duration based on optical parametric amplification has entered the range of fewoptical-cycle field.In this paper,we overview the basic principles,trends in development,and current state of the ultrashort and laser systems based on OPCPA,respectively.     

520nm泵浦780nm+1560nm双共振光学参量振荡器

我们在实验中演示了520nm单频绿光泵浦的基于周期极化磷酸钛氧钾(PPKTP)晶体的780nm+1560nm双共振光参量振荡器,高效制备780nm+1 560nm连续可调谐双色下转换光场。该参量振荡器可输出93.3 mW的1 560nm单频激光和44.6mW的780nm单频激光。通过改变PPKTP晶体的温度所得到的波长粗调范围为:信号光1 529.81nm~1 573.83nm(~44nm),闲置光788.26nm~777.20nm(~11nm);通过连续调谐520nm泵浦激光频率初步得到的闲置光在780.24nm(铷原子D2线)处频率连续调谐范围约1.6GHz。     

Origin of pressure-induced insulator-to-metal transition in the van der Waals compound FePS3 from first-principles calculations

Pressure-induced insulator-to-metal transition (IMT) has been studied in the van der Waals compound iron thiophosphate (FePS₃) using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid Hartree–Fock-DFT B3LYP functional. Our calculations reproduce correctly the IMT at ∼15 GPa, which is accompanied by a reduction of the unit cell volume and of the vdW gap. We found from the detailed analysis of the projected density of states that the 3p states of phosphorus atoms contribute significantly at the bottom of the conduction band. As a result, the collapse of the band gap occurs due to changes in the electronic structure of FePS₃ induced by relative displacements of phosphorus or sulfur atoms along the c-axis direction under pressure.     

Ferromagnetism and structural deformation in monolayer alpha lead oxide induced by N and F doping: New insights from first principles

We study the structural, electronic, and magnetic properties of monolayer α-PbO_0.875A_0.125 (A = N, F), which are calculated using first principles. As a result, N doping induces local ferromagnetism centered at the N²⁻ site, originating from the spin-down N 2p valence states. On the other hand, F doping induces nonmagnetism and induces ab-plane deformation, where F⁻ receives one electron to its nearest-neighboring Pb^1.75+ ions. N doping redshifts the bandgap of the undoped system and transforms it to be indirect, while F doping blueshifts the bandgap through the Burstein-Moss effect. The hybridization of Pb 6p and O 2p orbitals is stronger near the A site than that of the crystal structure edge. Our result shows new insights, predicting possible experimental results for future functional device applications.     

First principles calculations of oxygen reduction reaction at fuel cell cathodes

The efficiency of solid oxide fuel cells (SOFC) depends critically on materials, in particular for the cathode where the oxygen reduction reaction (ORR) occurs. Typically, mixed conducting perovskite ABO₃-type materials are used for this purpose. The dominating surface terminations are (001) AO and BO₂, with the relative fractions depending on materials composition and ambient conditions.Here, results of recent large-scale first principles (ab initio) calculations for the two alternative polar (La,Sr)O and MnO₂ (001) terminations of (La,Sr)MnO₃ cathode materials are discussed. The surface oxygen vacancy concentration for the (La,Sr)O termination is more than 5 orders of magnitude smaller compared to MnO₂, which leads to drastically decreased estimated ORR rates. Thus, it is predicted for prototypical SOFC cathode materials that the BO₂ termination largely determines the ORR kinetics, although with Sr surface segregation (long-term degradation) its fraction of the total surface area decreases, which slows down cathode kinetics.     

一种超混沌映射的单双参量自适应同步

利用参量自适应法实现了超混沌系统Kawakami映射的同步.通过严密的数学推导,给出了Kawakami映射在单参量自适应下实现同步的充分条件,并在双参量自适应控制下系统同样实现了同步.数值模拟结果显示,该映射输出具有类似于白噪声的宽谱特性,因此比较适合用于保密通信.     

钪与氧空位共掺杂锐钛矿相TiO2的形成能与电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理研究了钪(Sc)、氧空位(O_V)单/共掺杂锐钛矿相TiO₂,对晶体结构、形成能以及电子结构进行了对比分析.研究结果表明,Sc-TiO₂在富氧环境下缺陷形成能为负值,富钛环境下缺陷形成能为正值,表明Sc-TiO₂只能在富氧环境下制备;O_V-TiO₂、Sc-O_V-TiO₂在富氧或富钛环境下缺陷形成能均为负值,但富氧环境下形成能更低;O_V-TiO₂的0/1-缺陷电荷转变能级为深能级,而Sc-TiO₂的0/1-缺陷电荷转变能级则属于相对较浅能级;与纯锐钛矿相TiO₂相比,Sc-TiO₂的禁带宽度略有减小,但O_V-TiO₂、Sc-O_V-TiO₂禁带宽度变宽.