Nonlinear Diffusion Processes

We study elliptic systems of strongly nonlinear first-order differential equations in complex form on the plane. For such systems we develop the theory of Hilbert boundary value problems which is very much similar to the well-known theory for a holomorphic vector. Systems of nonlinear elliptic equations describe problems of interaction of several nonlinear stationary processes in the diffusive and convective mass and heat transport by hydrodynamic fluid flows.     

活性污泥法处理城市污水中鼓风和纯氧两种曝气方法的比较

对活性污泥法处理城市污水中鼓风曝气和纯氧（或富氧）曝气这两种方法，从曝气设备结构、特点、工艺技术指标、运行管理及经济性等方面进行了分析和比较。     

超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯复合材料的输运性质

采用热压法获得了具有不同混合比例的超导氧化物La1.85Sr0.15CuO4/超高分子量聚乙烯导电复合材料,并利用x射线衍射、扫描电子显微镜和标准四引线方法对复合材料的结构和低温电输运性质进行测量.实验结果显示,超导氧化物La1.85Sr0.15CuO4颗粒随机分布在聚合物本体中,相互间没有连接构成网络结构.在正常态下,复合材料的电阻-温度变化曲线给出类半导体行为.但对应于超导氧化物La1.85Sr0.15CuO4的超导转变温度Tc处,复合材料的电阻-温度变化曲线出现了极小值.室温下电阻率ρ随外加电场强度E的变化曲线测量结果表明,ρ-E曲线为一线形关系,随着电场强度E增加,电阻率ρ下降.文中对可能存在的导电机制进行分析,结果表明隧道贯穿模型可以很好地解释复合材料的导电机制.另外,外加电场强度E对复合材料的电输运特性有明显的影响.     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Computational Electrochemistry: A Model to Studying Ohmic Distortion of Voltammetry in Multiple Working Electrode,Microfluidic Devices,an Adaptive FEM Approach

Characteristics of mass transport and potential distribution applicable to microfluidic electrochemical flow cell devices has been modelled using the finite element method. A flexible, automatic grid generation algorithm has been combined with an a‐posteriori error indication technique presented by Nann and Heinze to allow irregular cell geometries to be modelled. The code has been applied to the problem of steady state generator – detector linear sweep voltammetry in a channel flow cell showing the effects of IR drop on the voltammetric response of each electrode.     

Experimental analysis of current and deformation of ion-exchange polymer metal composite actuators

In this paper we describe the experimental analysis of a novel ion-exchange polymer metal composite (IPMC) actuator under large external voltage. The experimental analysis is supplemented with a coupled thermodynamic model, which includes mass transport across the thickness of the polymer actuator, chemical reactions at boundaries, and deformation as a function of the solvent (water) distribution. In this paper, the case of large electrode potentials (over 1.2 V) has been analyzed experimentally and theoretically. At these voltage levels, electrochemical reactions take place at both electrodes. These are used in the framework of overpotential theory to develop boundary conditions for the water transport in the bulk of polymer. The model is then simplified to a three-component system comprised of a fixed negatively charged polymeric matrix, protons, and free water molecules within the polymer matrix. Among these species, water molecules are considered to be the dominant species responsible for the deformation of the IPMC actuators. Experiments conducted at different initial water contents are described and discussed in the context of the proposed deformation mechanism. Comparison of numerical simulations with experimental data shows good agreement.     

一般非均匀凸介质迁移算子本征值的分布

本文讨论一般非均匀凸介质所确定的迁移算子的本征值的分布问题，利用Ｈｉｌｂｅｒｔ空间的Ｈ算子理论，完整地解决了一般非均匀凸介质中迁移算子本征值的分布问题，若｛λｎ｝ｎ＝１＾∞是迁移算子本征值的一种计数，我们证明了Σ↓ｎ＝１↑∞ｅ＾６Ｒｅλｎτ〈＋∞，其中τ是粒子的最大逃逸时间，并对本征值的发散程度以及本征值的个数函数作了相应的讨论。