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81.
用能带理论分析一维超晶格电子在直流外场作用下的阻尼运动,对Bloch振荡和负微分电导现象给出清楚的物理图象,并通过数值解得到有阻尼时振荡频率随外场增加而趋近于Bloch频率的一般规律。 相似文献
82.
R.A. Ganeev A.I. Ryasnyansky A.L. Stepanov T Usmanov 《Optical and Quantum Electronics》2004,36(10):949-960
The nonlinear optical characteristics of silicate glasses doped with silver nanoparticles are investigated by Z-scan technique using second harmonic radiation of picosecond Nd:YAG laser (=532 nm, =55 ps). The real and imaginary parts of third-order nonlinear susceptibility of silver-contained glasses were measured. It was found that the sign of Im
(3)was negative due to saturated absorption and the sign of Re
(3) was changed from negative (self-defocusing) to positive (self-focusing) with growth of laser radiation intensity. The mechanisms responsible for saturated absorption and nonlinear refraction are discussed. 相似文献
83.
We report for the first time to our knowledge on the preparation of colloidal solution of chalcogenide semiconductor As2S3 by laser ablation and the measurements of its nonlinear-optical characteristics using Z-scan method at the wavelength of Nd:YAG laser radiation ( = 1064 nm, = 25 ns). The nonlinear refractive index was measured to be –7.5 × 10–18 m2 W–1. Nonlinear absorption coefficient of chalcogenide solution was measured to be 1 cm GW–1. 相似文献
84.
The presence of dust grains is a common phenomenon in the space environment. Grains can be charged by many different processes (e.g., photoemission, attachment of electrons/ions, the secondary emission, etc.). If the grain's surface potential becomes high enough, one can observe field emission of ions or electrons. We are trapping a single dust grain in a Paul trap, expose it to a low-energy electron beam, and investigate the evolution of its charge-to-mass ratio with respect to the energy of primary electron beam. We use micron-sized (D = 2–11 m) glass grains and charge them up to -300 V of surface potentials; it corresponds to the electric field strength of about 108 V/m. Analysis of the charging/discharging processes has shown that (1) the effect of the field enhanced secondary emission is negligible in the case of insulators and (2) the effective work function for electron field emission from charged insulators is as low as 1 eV. 相似文献
85.
M. A. Abbadi I. I. Al-Qasir J. M. Khalifeh 《International Journal of Theoretical Physics》2003,42(7):1629-1639
A three-parameter variational wave function is used to describe the binding energy of alkali—metal negative ions using a two-electron system in the ns2-state. Each electron is described by a modified screened hydrogenic wave function involving two free screening parameters denoted by c and a in addition to the core-screened nuclear charge,
. The model is applied to lithium, sodium, potassium, rubidium, and cesium anions, where the optimum values of the variational parameters are deduced through fitting the optimized energy to the available experimental values. It is also applied to group-II isoelectronic neutral atoms of Be, Mg, Ca, Sr, and Ba. The results of our calculation are compared with other two-electron methods. 相似文献
86.
Weak L
2
-solutions u of the Schrödinger equation, –u + q(x) u – u = f(x) in L
2
, are represented by a Fourier series using spherical harmonics in order to prove the following strong maximum and anti-maximum principles in
(N 2): Let 1 denote the positive eigenfunction associated with the principal eigenvalue 1 of the Schrödinger operator
. Assume that the potential q(x) is radially symmetric and grows fast enough near infinity, and f is a `sufficiently smooth' perturbation of a radially symmetric function, f 0 and 0 f / C const a.e. in
. Then u is 1-positive for - < < 1 (i.e., u c 1 with c const > 0) and 1-negative for 1 < < 1 + (i.e., u –c1 with c const > 0), where > 0 is a number depending on f. The constant c > 0 depends on both and f. 相似文献
87.
An optoelectronic switch with both n- and p-type delta-doped (-doped) quantum wells was investigated. The -doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of -doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light. 相似文献
88.
运用负值量子条件熵研究了双量子系统一类混合态的纠缠量度.给出了负值量子条件作为条件熵纠缠度的定义,证明了条件熵纠缠满足作为2×2系统一类混合纠缠态量度的四个基本条件.当双量子系统处于纯态时,条件熵纠缠度即为部分熵纠缠度.应用条件熵纠缠度研究了真空腔场中两全同二能级原子之间纯态和一类混合态纠缠的时间演化,比较了相同条件下两全同原子系统concurrence纠缠度的时间演化.结果表明,两纠缠度演化规律完全一致,验证了负值量子条件熵可以作为双量子系统纯态和一类混合态的纠缠量度.
关键词:
双量子系统
负值量子条件熵
条件熵纠缠度
混合态纠缠度 相似文献
89.
90.
基于用一种结构同时实现材料介电常数和磁导率为负的思想,提出了H型结构单元左手材料模型.采用矩形波导法测试表明,H型结构单元在微波频率范围出现左手透射峰,并且可以由参数t对左手特性区域进行调控.同时利用相位法、棱镜折射法和散射参量法从实验和理论证明了在左手透射峰区域材料的折射率为负值,介电常数和磁导率亦同时为负.相对由金属开口谐振环与金属线两种结构组合实现的左手材料,H型结构集磁谐振与电谐振于一体,结构简单、制备方便,对微波器件左手材料表现出更多的优越性. 相似文献