Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Charge carrier decay and diffusion in organic–inorganic CH3NH3PbI3–xClx perovskite based solar cell

In recent years, organic–inorganic lead halides attracted widespread interest, mainly due to their impressive photoconversion properties and low‐cost solution processing. In this study, we employed small amplitude transient photovoltage and photocurrent spectroscopy to investigate charge transport and recombination properties of perovskite CH₃NH₃PbI_3–xCl_x solar cell under realistic light harvesting conditions (<1 sun). Cell structure resembles outlay commonly found in organic photovoltaics, with perovskite absorber being sandwiched between two thin layers of organic polymers. Tested device displayed high power conversion efficiency (10.3%), good fill factor and negligible hysteresis effect. Fundamental device parameters were characterized at various open‐circuit voltages (V_oc) by examination of small voltage and current perturbations created by the low intensity pulsed laser excitations. The obtained results exhibit long charge carrier lifetimes and fast charge transport over the full range of applied optical bias, as well as remarkable diffusion lengths exceeding 1 μm. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

A combined transient and steady state approach for robust lifetime spectroscopy with micrometer resolution

We present the combination of two complementary micro‐photoluminescence spectroscopic techniques operating in transient and steady state condition, respectively. Introducing the time domain into the well‐established micro‐photoluminescence mapping approach operating under steady state conditions demonstrates a distinct improvement of the robustness and reliability in the determination of charge carrier lifetime measured with micrometer spatial resolution. Lifetimes from 50 ns to above ms are accessible. We elaborate a calibration procedure and apply the combined all‐photoluminescence setup to high‐performance multicrystalline silicon. A lifetime image obtained from the established photoluminescence imaging technique is reconstructed from the microscopic map by considering lateral diffusion and optical blurring, revealing a more detrimental influence of small angle grain boundaries as well as a higher lifetime within grains as may be deduced from the standard imaging technique. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET) with SiON gate dielectric. Using three different stress conditions of substrate maximum current, the changes to threshold voltage, maximum transconductance, saturation current and channel leakage current was monitored. Concurrently, the lateral distribution of interface trap density (N_it) and bulk trapped charge density (N_ot) with stress time has been extracted along the 70 nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100 nm short channels. The degradation of the PMOSFET was described by combining electrical property with N_it and N_ot profiles. Hot electron punch through (HEIP) effect was evidenced by negative Not distribution near the drain junction while more severe hot carrier degradation was successfully demonstrated by the empirical power law dependence of the electrical parameters N_it and N_ot. We have studied the evolution of degradation behavior along highly scaled tens of nanometer channel, and N_it and N_ot profile offers systematic study and interpretation of degradation mechanism of hot carrier effect in MOSFET devices.     

Interphases in Polymer Solid-Contacts and Nanocomposites Probed by Positron Annihilation Lifetime Spectroscopy

At polymer-solid contacts with thermoplastic polymers, the chain characteristics can deviate from the bulk on a length-scale of several nanometer in the so-called interphase. Such an interphase depends on the interaction between respective macromolecule and substrate, and affects the free volume in the polymer. Here, we review our experiments on the characterization of the free volume by positron lifetime spectroscopy at planar and curved interfaces. For Teflon AF on silicon, we identify a layer of increased density, corresponding to an interphase width of some 10 nm. PEP based nanocomposites with functionalized silica show no interphase, whereas for functionalized POSS an interphase is detected.     

Influence of Gd doping on the absolute quantum efficiency and lifetime of EuxGd1-x（TTA）3phens

Absolute quantum yield （Ф） is one of the most important parameters to evaluate the potential of novel materials. Lanthanide complexes EuxGd1-x（TTA）3phens are synthesized with the ratio of Gd3＋ dopant concentration ranging from 10% to 90% to improve the absolute quantum yield. EuxGd1-x（TTA）3phens possess similar infrared and ultraviolet spectra, showing that they have similar molecular structures. The absolute emission quantum yields of EuxGd1-x（TTA）3phens are determined using a fluoromax-4 spectrofluorometer equipped with an integrating sphere. The fluorescence lifetimes of the EuxGd1-x（TTA）3phens are measured in the same experiment. It was found that both absolute quantum yields and fluorescence lifetimes of EuxGd1-x（TTA）3phens are of quasi-periodic variation with the change of the Gd3. dopant concentrations. The absolute quantum efficiency and fluorescence lifetime vary with respect to the Gd content in an opposite fashion, indicating that the rate of energy absorption by the EuxGd1-x（TTA）3phens and the conversion to light energy is critical for the absolute quantum efficiency. The radiative rate constant Kr and non-radiative rate constant Knr are calculated. The dependence of Kr and Knr on the Gd3＋ dopant concentrations is very similar to that of absolute quantum efficiency. The radiation rate constant Kr and absolute quantum efficiency have a linear relationship.     

Pressure-Suppressed Carrier Trapping Leads to Enhanced Emission in Two-Dimensional Perovskite (HA)2(GA)Pb2I7

A remarkable PL enhancement by 12 fold is achieved using pressure to modulate the structure of a recently developed 2D perovskite (HA)₂(GA)Pb₂I₇ (HA=n-hexylammonium, GA=guanidinium). This structure features a previously unattainable, extremely large cage. In situ structural, spectroscopic, and theoretical analyses reveal that lattice compression under a mild pressure within 1.6 GPa considerably suppresses the carrier trapping, leading to significantly enhanced emission. Further pressurization induces a non-luminescent amorphous yellow phase, which is retained and exhibits a continuously increasing band gap during decompression. When the pressure is released to 1.5 GPa, emission can be triggered by above-band gap laser irradiation, accompanied by a color change from yellow to orange. The obtained orange phase could be retained at ambient conditions and exhibits two-fold higher PL emission compared with the pristine (HA)₂(GA)Pb₂I₇.     

Highly Efficient Deep-Red Non-Doped Diodes Based on a T-Shape Thermally Activated Delayed Fluorescence Emitter

Device simplification is of practical significance for organic light emitting diodes (OLEDs), and remains the great challenge for deep-red emitters. Herein, a deep-red thermally activated delayed fluorescence molecule ( p TPA-DPPZ ) is reported which features a T shaped structure containing two triphenylamine (TPA) donors, one either side of a planar dipyridophenazine (DPPZ) acceptor. The rational spatial arrangement of the functional groups leads to limited but sufficient molecular packing for effective carrier transport. The neat p TPA-DPPZ film achieves an around 90-fold improved radiation rate constant of 10⁷ s⁻¹ and the nearly unitary reverse intersystem crossing (RISC) efficiency, as well as accelerated emission decays for quenching suppression. The high radiation and RISC result in a photoluminescence quantum yield of 87 %. The bilayer OLED based on the p TPA-DPPZ emissive layer achieved the record external quantum efficiencies of 12.3 % for maximum and 10.4 % at 1000 nits, accompanied by the deep-red electroluminescence with the excellent color purity.