Multiple mobility edges in a 1D Aubry chain with Hubbard interaction in presence of electric field: Controlled electron transport

Electronic behavior of a 1D Aubry chain with Hubbard interaction is critically analyzed in presence of electric field. Multiple energy bands are generated as a result of Hubbard correlation and Aubry potential, and, within these bands localized states are developed under the application of electric field. Within a tight-binding framework we compute electronic transmission probability and average density of states using Green's function approach where the interaction parameter is treated under Hartree–Fock mean field scheme. From our analysis we find that selective transmission can be obtained by tuning injecting electron energy, and thus, the present model can be utilized as a controlled switching device.     

微尺度下壁面粗糙度对面向导热影响研究

随着空间尺度的缩小,界面对导热的影响就会越来越明显。本文采用非平衡分子动力学模拟方法模拟了壁面的粗糙度对面向导热的影响,并给出微尺度下的粗糙度定义。在模拟中构造了不同的壁面粗糙度,得到了面向热导率随着壁面粗糙度增加而减小的结果。分析认为壁面的镜面反射率随着粗糙度增加而减小,而镜面反射率减小将导致热导率下降．     

Distinguishability and Disturbance in the Quantum Key Distribution Protocol Using the Mean Multi-Kings’ Problem

We introduce a quantum key distribution protocol using mean multi-kings’ problem. Using this protocol, a sender can share a bit sequence as a secret key with receivers. We consider a relation between information gain by an eavesdropper and disturbance contained in legitimate users’ information. In BB84 protocol, such relation is known as the so-called information disturbance theorem. We focus on a setting that the sender and two receivers try to share bit sequences and the eavesdropper tries to extract information by interacting legitimate users’ systems and an ancilla system. We derive trade-off inequalities between distinguishability of quantum states corresponding to the bit sequence for the eavesdropper and error probability of the bit sequence shared with the legitimate users. Our inequalities show that eavesdropper’s extracting information regarding the secret keys inevitably induces disturbing the states and increasing the error probability.     

用平均场近似研究液晶分子结构与清亮点的关系

液晶的平均场理论假设每个液晶分子都是处在其它周围所有分子的平均作用势场中, 而不考虑该分子与周围各个分子之间的单独关联, 一个分子所感受到的分子场就是所有其它分子给予这个分子的作用场对位置和对取向的平均值. 当周围分子不是完全有序排列时, 其混乱程度可以用序参量S表示(S≤1), 中央一个分子受的势能为－Sg(θ). 其中g(θ)是在排列整齐的平均场中该分子的势能函数的负值. 在此基础上, 可以解一个关于序参量和温度的积分方程, 求出清亮点. 本文采用Gay-Berne势模拟液晶分子的双体势, 用分子力学UFF方法优化液晶分子(二环辛烷和硼笼的衍生物)的单体和双体的构型和能量, 从而获得Gay-Berne势的参数, 得到液晶的清亮点. 计算结果与实验基本一致.     

An equivalent nonlinearization method for analysing response of nonlinear systems to random excitations

I.IntroductionInthelasttwodecades,theresponseofstochasticallyexcitednonlinearsystemshavebeenresearcheddeeplyandwidely.Manyexactandapproximatemethodsofpredictingtheresponseofnonlinearsystemstorandomexcitationshavebeenprop0sedl']'l21.Becauseofv4riousreasons…     

杭州大剧院风压分布的风洞试验研究

杭州大剧院外观造型新颖独特，由一个近似为椭球的双曲面屋盖和一个倒置的圆锥面玻璃幕墙相交形成大剧院的主体建筑的外轮廓．本文结合该主体结构的抗风设计要求，制作了1：200刚性模型进行结构表面脉动风压平均风压分布的风洞试验研究，详细介绍了风洞试验及数据处理方法，讨论了在不同风向角下椭球面屋盖和圆锥面玻璃幕墙的风压分布．为了便于整体结构设计，本文根据结构的实际情况对椭球面和圆锥面进行分块并给出相应的分块风压数据，最后根据各风向角下的风压分布特征给出了整体结构抗风设计的最不利风向角．     

线性随机桁架结构的平稳随机响应分析

研究了随机桁架结构的平稳随机响应问题。同时考虑结构的物理参数、几何尺寸的随机性，从结构平稳随机响应在频域上的表达式出发，利用求解随机变量函数矩的方法，导出了随机桁架结构在平稳随机激励下位移响应均方值的均值、均方差和变异系数的计算表达式。通过算例考察了随机荷载激励下结构物理参数、几何尺寸的随机性对结构随机响应的影响。     

双三次Bezier曲面片的光滑拼接

本文根据曲面的总曲率和平均曲率推导出双三次Bezier曲面片拼接的C^2连续条件。     

微分学中构造函数的新方法

结合实例将常微分方程中的首次积分和特征方程理论应用于微分学中函数的构造,从而使之有章可循.     

Evolution of hypersurfaces by the mean curvature minus an external force field

In this paper, we study the evolution of hypersurface moving by the mean curvature minus an external force field. It is shown that the flow will blow up in a finite time if the mean curvature of the initial surface is larger than some constant depending on the boundness of derivatives of the external force field. For a linear force, we prove that the convexity of the hypersurface is preserved during the evolution and the flow has a unique smooth solution in any finite time and expands to infinity as the time tends to infinity if the initial curvature is smaller than the slope of the force.