Role of cleaning methods on bond quality of Ti coated glass/imidex system

Thin film materials are widely used in the fabrication of semiconductor microelectronic devices. In thin film deposition, cleanliness of substrate surface have become critically important as over 50% of yield losses in integrated circuit fabrication are caused by microcontamination [1]. There are many wafer cleaning techniques. The most successful approach for silicon wafer cleaning technique is RCA clean [2]. But for glass substrate it is still not known which procedure of cleaning is the best. This paper provides an understanding of the right way of glass wafer cleaning method, with a focus towards identifying good bond strength. Two wafer cleaning techniques have been used for cleaning glass substrates in the context of laser micro-joining of dissimilar substrates. First cleaning procedure involves two steps, first cleaning in acetone solution and then in DI water solution. After each step dried with N₂. Second cleaning procedure involves four steps, first cleaning with 1% Alconox solution, second in DI water, third in acetone solution and finally in a methanol solution and dried with N₂ after each step. Deposition of Ti thin film on top of these two types of substrate using DC magnetron sputtering method also showed better adhesion of Ti film on glass for the second type of cleaning method. Scanning electron microscopy (SEM) analyses of the lap shear tested failed surfaces for these two kinds of samples revealed strong bond for samples prepared by second cleaning method compared to first cleaning method. Characterization of these two sets of samples using X-ray photoelectron spectroscopy (XPS) has shown excellent contamination removal for the second cleaning method. This modification is believed to be due to reduction of carbon contamination.     

Thiolated cyclodextrin self-assembled monolayer-like characterized with secondary ion mass spectrometry

In the work the focus is on the preparation of self-assembled monolayer-like films consisting of thiolated cyclodextrin on gold substrate and a characterization by using secondary ion mass spectrometry. The short (1 min) and long (1 h) time preparations of self-assembled monolayer-like films, resulting in submonolayer and monolayer regimes, are investigated, respectively. The observed species of thiolated cyclodextrin (M as molecular ion) self-assembled monolayer-like films are assigned to three groups: Au_xH_yS_z clusters, fragments with origin in cyclodextrin molecule associated with Au, and molecular ions. The group of Au_xH_yS_z (x = 2-17, y = 0-2, z = 1-5) clusters have higher intensities than other species in the positive and even more in negative mass spectra. Interestingly, the dependence between the number of Au and S atoms shows that with the increasing size of Au_xH_yS_z clusters up to 11 Au atoms, the number of associated S atoms is also increasing and then decreasing. Molecular species as (M−S+H)Na⁺, (M+H)Na⁺, AuMNa⁺, (M₂−S)Na⁺, and M₂Na⁺ are determined, and also in cationized forms with K⁺. The intensities of thiolated cyclodextrin fragments at the long time preparation are approximately 10 times higher than the intensities of the same fragments observed at the short time. The largest observed ions in thiolated cyclodextrin self-assembled monolayer-like films are AuM₂ and Au₂M. The thiolated cyclodextrin molecular ions are compared with hexadecanethiol molecular ions in the form of Au_xM_w where the values of x and w are smaller for thiolated cyclodextrin than for hexadecanethiol. This result is supported with larger, more compact, and more stabile thiolated cyclodextrin molecule.     

Optimum packing density and crystal structure of tin-doped indium oxide thin films for high-temperature annealing processes

The influence of high-temperature annealing on the electrical properties and microstructure of tin-doped indium oxide (ITO) thin films was investigated as a function of oxygen gas flow ratio to argon gas during the sputtering deposition. The ITO thin films were annealed at 500 °C in air after the deposition. It was found that the ITO thin films, which were deposited in relatively low oxygen gas flow ratio, exhibited high Hall mobility and low-resistivity after the annealing. Furthermore, the X-ray reflectivity and diffraction measurement revealed that the ITO thin film with low-resistivity after annealing exhibited high packing density, smooth surface and low crystallization degree. It can be considered that the carrier electron scattering was suppressed with increasing in the packing density of the ITO thin film; as a result, the Hall mobility and resistivity were improved.     

Electrochemical properties of thin TiO2 electrode on Li1 + xAlxGe2 − x(PO4)3 solid electrolyte

A fabrication of all-solid-state thin-film rechargeable lithium ion batteries by sol-gel method is expected to achieve both the simplification and cost reduction for fabrication process. TiO₂ thin film electrode was prepared by PVP (polyvinylpyrrolidone) sol-gel method combined with spin-coating on Li_1 + xAl_xGe_2 − x(PO₄)₃ (LAGP) solid electrolyte which has wide electrochemical window. The thin film was composed of anatase TiO₂ that is the most active phase for Li insertion and extraction and contacted well with LAGP substrate. In the cyclic voltammogram, a redox couple was observed at 1.8 V vs. Li/Li⁺ assigned to Li insertion/extraction into/from anatase TiO₂, indicating that the thin film worked as electrode for lithium battery. The charge and discharge test in various charge and discharge rates revealed that the discharge process (delithiation) is thought to be faster than charge process (lithiation). It is attested that the sol-gel process, which derives both simplification and cost reduction for fabrication process, can be applied to thin film battery using LAGP solid electrolyte.     

Template-free synthesis of TS-1 zeolite film on tubular mullite support

The TS-1 film on tubular mullite support was prepared by secondary growth via template-free route using tetraethyl orthosilicate (TEOS) and tetrabutyl orthotitanate (TBOT) as silica and titanium sources. The as-made films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and ultraviolet-visible spectroscopy (UV-vis). Continuous TS-1 seed layer was bonded tightly to the mullite substrates. After secondary growth in the template-free synthesis solution, intergrown TS-1 zeolite film with the typical MFI-type structure was formed on the outer surface of support. The Si atoms in zeolitic lattice were found to be isomorphously substituted by Ti atoms which existed only in tetrahedral coordination. The thickness of the obtained TS-1 zeolite film was less than 20 μm.     

Interfacial morphology and friction properties of thin PEO and PEO/PAA blend films

The scanning force microscope (SFM) was used to investigate morphology of poly(ethylene oxide) (PEO) and poly(acrylic acid) (PAA) blend. The effect of solvent and dewetting in surface structure of PEO film was reported. The results manifested that the crystallization of PEO could be suppressed completely in ultrathin region via using chloroform as a solvent, and the branched-like crystallization was recovered after dewetting. Also, the effect of thickness, the ratio of PEO/PAA and dewetting in surface morphology of PEO-PAA blend films were investigated. These results showed that the crystallization was highly dependent on the ratio of PEO/PAA and the thickness of blend film. Furthermore, we assembled the PEO/PAA layer-by-layer film by spin-casting method for the first time, which exhibited highly efficiency. As a complementary tool, we also used lateral force microscopy (LFM) to explore surface information of these films. The result was indicative of interfacial constraints in ultrathin region, and also was supported by the results showing the spin-casting PEO/PAA blends rather than heterogeneous mixture.     

Structural and optical properties of RF magnetron sputtered aluminum nitride films without external substrate heating

We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magnetron sputtering. A ceramic AlN target was used to sputter deposit AlN films without external substrate heating in Ar-N₂ (1:1) ambient. The X-ray diffraction and high resolution transmission electron microscopy results revealed that the films were preferentially oriented along c-axis. Cross-sectional imaging revealed columnar growth perpendicular to the substrate. The secondary ion mass spectroscopy analysis confirmed that aluminum and nitrogen distribution was uniform within the thickness of the film. The optical band gap of 5.3 eV was evaluated by UV-vis spectroscopy. Photo-luminescence broad band was observed in the range of 420-600 nm with two maxima, centered at 433 nm and 466 nm wavelengths related to the energy states originated during the film growth. A structural property correlation has been carried out to explore the possible application of such important well oriented nano-structured two-dimensional semiconducting objects.     

Surfactant-assisted synthesis of Ag nanostructures and their self-assembled films on copper and aluminum substrate

In this paper, silver nanostructures with controlled morphologies, such as plates, rods, belts, sheets and their self-assembled films have been prepared on copper and aluminum substrates by a surfactant-assisted colloidal chemical method. The X-ray powder diffraction (XRD) and the selected area electron diffraction (SAED) patterns indicated that the Ag nanostructures grew on the substrates with cubic symmetry and single-crystalline in nature. An oriented attachment with surfactant-assisted mechanism and a cooperative effect of surfactant and chloride ion on the morphology of Ag nanostructures were investigated systematically and synthetically.     

Oxidation temperature dependent properties of MgO thin film on alumina

The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3.     

Boron doped ZnO thin films fabricated by RF-magnetron sputtering

By using the radio frequency-magnetron sputtering (RF-MS) method, both pure ZnO and boron doped ZnO (ZnO:B) thin films were deposited on glass substrates at ambient temperature and then annealed at 450 °C for 2 h in air. It is found that both ZnO and ZnO:B thin films have wurtzite structure of ZnO with (0 0 2) preferred orientation and high average optical transmission (≥80%). Compared with the resistivity of 6.3 × 10² Ω cm for ZnO film, both as-deposited and annealed ZnO:B films exhibit much lower resistivity of 9.2 × 10⁻³ Ω cm and 7.5 × 10⁻³ Ω cm, respectively, due to increase in the carrier concentration. Furthermore, the optical band gaps of 3.38 eV and 3.42 eV for as-deposited and annealed ZnO:B films are broader than that of 3.35 eV for ZnO film. The first-principles calculations show that in ZnO:B thin films not only the band gap becomes narrower but also the Fermi level shifts up into the conduction band with respect to the pure ZnO film. These are consistent with their lower resistivities and suggest that in the process of annealing some substituted B in the lattice change into interstitial B because of its smaller ion radius and this transformation widens the optical band gap of ZnO:B thin film.