Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping(2D-VRH) model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.     

Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors

Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO₃ dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO₃ would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.

Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal.     

Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

The hot-carrier degradation for 90~nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate voltage (LGV) (at V_g=V_th, where V_th is the threshold voltage) stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV (V_g=V_th stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage (GIDL) current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at V_g=V_th with various drain biases. Experimental results show that the degradation slopes (n) range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET (0.5-0.6) and also that of the long gate length LDD MOSFET (\sim0.8).     

基于区域分解算法的叶顶间隙流场的数值模拟

本文采用Marini－Quarteroni的不重叠区域分解算法和“镶嵌”式间隙网格技术,开发了可计算叶项间隙流场的N－S方程求解程序。通过计算结果同实验显示结果的比较表明,本文的计算方法不仅可以很好地描述叶顶间隙流动的细节,而且在复杂区域流场计算中是非常有效的。本文指出在叶栅存在间隙时,前缘产生什么样的拓扑结构不仅取决于相对间隙的大小,同时也取决于叶栅的负荷情况。     

盐胁迫下匍匐翦股颖高光谱分析与电解质渗透率反演

叶片电解质渗透率是反映植物细胞渗透性的一个重要指标,对草坪草遭受盐胁迫的研究有重要意义。针对叶片电解质渗透率传统检测方法,耗时长,损伤叶片,无法大面积监测等弊端,探讨了用高光谱快速无损检测叶片电解质渗透率的方法。以匍匐翦股颖(Agrostis stolonifera)为对象,在温室中水培两周后进行浓度分别为0(对照),100和200 mmol·L-1的盐处理,7 d后按间隔7 d取样3次,共72个样。每次取样时先测量样品的光谱值,然后采用电导率法测定叶片电解质渗透率。分析匍匐翦股颖三种盐处理与光谱反射率之间的关系和差异,对三种盐处理的光谱反射率计算归一化植被指数和差值植被指数,采用差分法计算光谱反射率的一阶微分,同时计算出蓝、绿和红光的三边参数,分析叶片电解质渗透率与光谱反射率、归一化植被指数、差值植被指数和三边参数的相关性。利用叶片电解质渗透率和各光谱数据相关程度高的数据,对校正集采用一元线性回归、多元线性回归和偏最小二乘回归法构建叶片电解质渗透率反演模型,用预测集检验反演模型。结果表明：盐胁迫与叶片高光谱在450～700 nm波段呈正相关;叶片电解质渗透率与450～732 nm波段反射率在0.01水平上显著相关;三边参数中绿边幅值和绿边面积与叶片电解质渗透率显著相关;采用偏最小二乘回归法建立的反演模型精度最好,建模和反演预测的决定系数分别达到了0.681和0.758,均方根误差分别为7.124和7.079。偏最小二乘法构建的反演模型实现了盐胁迫下匍匐翦股颖叶片电解质渗透率的快速无损检测,也为采用高光谱实时监测盐胁迫对匍匐翦股颖及其同类植物的伤害提供了依据和理论参考。     

磁体和线圈相对静止的发电装置

如果说磁体和线圈相对静止可以输出电能,或许谁都不会相信,因为法拉第的电磁感应明确表明相对运动是最重要的。如果说在相对静止的磁体和线圈之间有一个圆筒转子,转子上有两个对称的孔(起到漏磁作用),这两个孔正好与磁体和线圈同心,电磁感应规律证明这的确是一台发电机。     

硅p-n结太阳电池对DF激光的响应

 对硅p-n结太阳电池在DF激光辐照下的响应进行了理论和实验研究。推导了p-n结反向饱和电流随温度的近似变化关系。根据该近似关系，计算了太阳电池在DF激光辐照过程中输出电压的变化曲线。计算结果和实验结果之间取得了比较好的一致性。     

天然气管道泄漏的声-压耦合识别方法

为了提高对城市燃气管道泄漏检测的准确性,该文提出了一种基于声波与压力波耦合的识别方法,并通过实验考察了它的可行性。实验发现管道的气体泄漏引起了两个显著特征,即泄漏噪声与压力下降。泄漏噪声的强度随泄漏量增大而增大,但噪声的频率基本保持不变;管道内压力降低的速率与泄漏量大小正相关。据此发展了一种基于相关算法的泄漏耦合识别方法,通过判别泄漏噪声与压力降是否同时出现,以及相关函数值大小与阈值对比,来判别泄漏是否发生及其大小。实验验证了耦合识别方法的有效性,并展示了比单一信号识别方法更好的抗干扰能力。     

PIN限幅器PSpice模拟与实验研究

 从PIN二极管基区双极载流子扩散方程出发,通过拉普拉斯变换求解得到PIN二极管子电路模型,从而通过PSpice软件瞬态数值模拟得到了PIN限幅器的尖峰泄漏、平顶泄漏与脉冲功率、上升时间关系。对于I层厚度一定的限幅器,模拟与实验表明脉冲前沿越大,尖峰泄漏功率插入损耗越大,脉冲前沿过缓则可能没有尖峰泄漏现象;尖峰泄漏功率随着输入功率的增加而变大,但尖峰泄漏功率插损也随之增大;尖峰脉冲宽度与I层厚度、输入功率及脉冲前沿均有关系。限幅器尖峰泄漏与平顶泄漏模拟结果与实验数据基本一致。     

分布式负载垂直极化有界波电磁脉冲模拟器外泄场的规律分析

将基于MPI平台的并行时域有限差分(FDTD)方法与基于完全磁导体(PMC)镜像法相结合,并结合CST模拟软件,模拟给出分布式负载垂直极化有界波电磁脉冲(EMP)的外泄场(包括侧泄场和后泄场)的分布规律。模拟结果与实验结果符合得很好。研究表明：在高度方向上,地面附近的外泄场峰值最大,但远离模拟器时,在1.5 m高的高度范围内,外泄场的峰值差别不大;不管采用何种双指数脉冲源,距离模拟器边缘位置比较近的测点在传输线段的侧泄场的幅值大于分布式负载段侧泄场的幅值,且两者都大于分布式负载末端的后泄场幅值,但随着测点与模拟器边缘的垂直距离的增加,分布式负载段的后泄场可能会比侧泄场大;对于电压峰值相同的双指数激励源而言,所含的高频分量越多,在一定范围内,从其分布式负载末端外泄的后泄场更大;模拟器下方大地的电导率增加,模拟器的外泄场增加。