用SPIV技术测量压气机转子尖区复杂流动

本文将数字式SPIV技术应用到低速大尺寸压气机实验台上,并在设计状态和近失速状态下,对转子槽道内叶尖区域多个截面内的三维瞬态速度场进行了成功测量。测量结果表明SPIV透过机匣视窗及即可直接测量旋涡和二次流的瞬态结构,而且能够解决多级压气机内部流场的测量.在压气机SPIV测量中,激光反光的控制和示踪粒子的均匀稳定散播是决定成败的关键因素。     

慈溪市城河治理工程混凝土渗漏的分析与处理

慈溪市1997年开始实施城区河道治理工程，由于种种原因，在城河治理工程中，出现了污水渠等构筑物渗漏污水的现象．综合分析了各种渗漏出现的原因，详细介绍了处理办法，分析评价了处理效果，并提出通过改进设计、加强管理来控制渗漏的建议、     

Asymmetric bipolar membrane: A tool to improve product purity

Bipolar membranes (BPMs) are catalytic membranes for electro-membrane processes splitting water into protons and hydroxyl ions. To improve selectivity and current efficiency of BPMs, we prepare new asymmetric BPMs with reduced salt leakages. The flux of salt ions across a BPM is determined by the co-ion transport across the respective layer of the membrane. BPM asymmetry can be used to decrease the co-ion fluxes through the membrane and shows that the change of the layer thickness and charge density of the corresponding ion exchange layer determines the co-ion flux. The modification of a commercial BP-1 with a thin additional cation exchange layer on the cationic side results in a 47% lower salt leakage. Thicker layers result in water diffusion limitations. In order to avoid water diffusion limitations we prepared tailor made BPMs with thin anion exchange layers, to increase the water flux into the membrane. Therefore a BPM could be prepared with a thick cation exchange layer showing a 62% decreased salt ion leakage through the cationic side of the membrane.     

Comparative Solution Synthesis of Mn Doped (Na,K)NbO3 Thin Films

(K_0.5Na_0.5)NbO₃ (KNN) is a promising lead-free alternative for ferroelectric thin films such as Pb(Zr,Ti)O₃. One main drawback is its high leakage current density at high electric fields, which has been previously linked to alkali non-stoichiometry. This paper compares three acetate-based chemical solution synthesis and deposition methods for 0.5 mol % Mn-doped KNN film fabrication, using lower crystallization temperature processes in comparison to the sintering temperatures necessary for fabrication of KNN ceramics. This paper shows the crucial role of the A site homogenization step during solution synthesis in preserving alkali chemical homogeneity of Mn doped KNN films. Chemically homogeneous films show a uniform grain size of 80 nm and a leakage current density under 2.8×10⁻⁸ A cm⁻² up to electric fields as high as 600 kV cm⁻¹, which is the highest breakdown strength reported for KNN thin films. Solution synthesis involving two-step pyrolysis resulted in films with dense, columnar microstructures, which are interesting for orientation control and enhancement of piezoelectric properties. This study reports detailed solution synthesis and deposition processes with good dielectric, ferroelectric and breakdown field properties. An optimized fabrication method that should couple low leakage current density with dense and oriented microstructures is proposed.     

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

Effect of chemical structure of acrylic pressure‐sensitive adhesives for polarizing film on light leakage phenomenon in TFT‐LCDs

Increasing image quality in thin‐film transistor liquid crystal displays (TFT‐LCD) is a recognized challenge for electronic companies and specialists working in this area. One of the main problems in TFT‐LCDs is a phenomenon called “light leakage”, affecting black–white contrast and color brightness. It occurs because of a heat‐induced shrinkage and disorientation of the polarizing film of TFT‐LCD, which controls the intensity of the light from the backlight unit. Improvement of the light leakage can be achieved through using a pressure‐sensitive adhesive (PSA) used for assembling the polarizing film onto the TFT‐LCD panel. In this paper, eight acrylic/methacrylic monomers with high glass transition temperature (Tg) were employed for synthesis of the polymers for the adhesive. Effect of structure, Tg, and elasticity modulus of the synthesized polymers on the light leakage was investigated simultaneously for 2.5‐ and 7.0‐in. size samples. We demonstrated that the light leakage can be minimized through two different mechanisms—high stress relaxation of the polymers with low Tg and low modulus and high shrinkage resistance of the polymers with high Tg and high modulus. The results of this work indicate a possibility to develop a universal PSA for polarizing film in TFT‐LCDs of different sizes that will have a positive effect on manufacturing productivity and lowering prices of digital devices. Copyright © 2011 John Wiley & Sons, Ltd.     

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)with an atomic layer deposited Al2O3gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated.Temperature dependent electrical characteristics are investigated.Different electrical behaviors are observed in two temperature regions,and the underlying mechanisms are discussed.It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current,which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions.Methods to further reduce the off-state drain leakage current are given.     

Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage

The energy diagram of RuO₂/Al‐doped TiO₂/RuO₂ structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO₂ film was varied by changing position of the atomic layer deposition cycle of Al₂O₃ during the atomic layer deposition of 9 nm‐thick TiO₂ film. The interface between the TiO₂ film and the RuO₂ electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

考虑信息泄露的零售商需求预测信息共享研究

针对信息泄露导致零售商信息共享意愿降低的问题,基于竞争型制造商创新的视角,构建了考虑信息泄露的零售商需求预测信息共享模型,求解了供应链各主体的均衡决策,分析了信息泄露对零售商信息共享的影响。研究发现:虽然需求预测信息泄露能够增加两个竞争型制造商的创新投入,但会削弱博弈主导制造商的领导者优势。上游竞争型供应链中的信息泄露会削弱下游零售商的事前利润,零售商的信息共享价值降低。本文克服了Shamir关于供应链需求信息泄露局限于零售商的不足,并进一步考虑了制造商之间的竞争和创新。     

Impact of post-nitridation annealing on ultra-thin gate oxide performance

Decoupled-Plasma Nitridation (DPN) process with high level of nitrogen incorporation is widely used in the state-of-the-art technology, in order to reduce gate leakage current and boron penetration. However, due to the low temperature DPN process, the post-nitridation annealing treatment is required to improve the ultra-thin gate oxide integrity. In this paper, the effect of post-nitridation annealing on DPN ultra-thin gate oxide was investigated. The device performance and reliability were evaluated in three different post-nitridation annealing ambient (N₂/O₂, He, and NO).