环形脉冲变压器分布电容优化设计及实验

基于高变比脉冲变压器开展全固态调制器研究,输出电压为70kV、输出脉冲为200μs。研究了次级均匀绕制时环形结构脉冲变压器初次级间分布电容,给出了初次级间等效分布电容与静态分布电容的关系。在此基础上,从能量存储角度推导了次级非均匀绕制时初次级间等价分布电容与静态分布电容的关系表达式。基于理论分析对设计研制的脉冲变压器分布电容开展了实验研究,结果表明,采用非均匀绕制方式脉冲变压器动态分布电容减小30%,在脉冲变压器变比为1∶100时实现输出脉冲前沿2.5μs,过冲4.3%。     

吸力面小翼对扩压叶栅间隙泄漏的影响

采用数值模拟方法对利用吸力面小翼方式控制压气机叶栅间隙流动进行研究。结果表明,附加吸力面小翼可以降低叶顶泄漏流速,削弱泄漏涡强度,使得泄漏涡区损失降低。不同宽度吸力面小翼在不同间隙下部可以较好地减少叶尖泄漏,在叶顶间隙为3.3%叶高时,附加相对宽度为0.5的吸力面小翼可使损失降低4.7%。叶顶压差的降低及对泄漏涡结构的改变是吸力面小翼降低泄漏掺混损失的主要原因。     

A Protocol for Bidirectional Quantum Secure Communication Based on Genuine Four-Particle Entangled States

By swapping the entanglement of genuine four-particle entangled states, we propose a bidirectional quantum secure communication protocol. The biggest merit of this protocol is that the information leakage does not exist. In addition, the ideas of the ``two-step" transmission and the block transmission are employed in this protocol. In order to analyze the security of the second sequence transmission, decoy states are used.     

摆动液压缸圆环螺旋流的流动及内泄漏研究

考虑液压油的黏度随温度与压强的变化, 以连续性方程、N-S方程、能量方程为基础, 推导出螺旋摆动液压缸内部圆环螺旋流的速度方程及泄漏量方程. 运用大型通用CFD仿真软 件fluent对螺旋摆动液压缸内部的圆环螺旋流流场及泄漏规律进行数值仿真. 对螺旋摆 动液压缸内螺旋流动的理论计算与仿真结果进行对比分析, 结果表明理论推导正确, 从而为螺旋摆动 缸内泄漏及容积耗损提供理论依据.     

叶轮机械复杂流动的PIV应用研究

本文发展了适用于叶轮机械等复杂内流系统使用的ＣＣＤ视场标定技术,以及能够消除视窗大颗粒污染带来的影响的图象处理技术,并在高速压气机实验台上对一小展弦比高负荷跨音风扇转子尖部的非定常瞬态流场进行了成功测量．     

汽封泄漏流动对透平叶片级通道

本文采用作者发展的叶轮机械通用计算程序GAP10程序对带汽封结构反动式透平叶片级流场进行三维数值模拟,分析了汽封泄漏流动进入叶栅通道后动叶片通道的流场结构,并讨论了泄漏流动对通道二次流动发展方式的影响.     

Preparation and properties of vesicles from condensable amphiphilic amino acids

Three double‐chain amphiphiles with amino acid groups as hydrophilic moiety were synthesized. These amphiphiles can be easily dispersed in buffer solution to form transparent dispersion. Examination of the dispersion by transmission electron microscopy (TEM) showed the formation of stable vesicular aggregates, which was also confirmed by the ability to encapsulate water‐soluble dyes. Since amino acid groups are located on the surface of the vesicles, water‐soluble carbodiimide can induce the condensation of these groups to form peptide. The phase transition temperatures of these vesicles were estimated by differential scanning calorimetry (DSC), and a decrease of phase transition temperature was observed after polycondensation due to the disturbance of the ordered arrangement of the hydrophobic chains. The leakage rate of the vesicles before and after condensation was studied by monitoring the increase of fluorescence intensity of water‐soluble dye. These vesicles belong to the least permeable ones and the leakage rate can be controlled by varying the degree of condensation or the temperature.     

Te溶剂Bridgman法CdMnTe晶体核辐射探测器的制备和表征

碲锰镉(CdMnTe)作为性能优异的室温核辐射探测器材料,可用于环境监测和工业无损检测领域。本文中采用Te溶剂Bridgman法生长In掺杂Cd_0.9Mn_0.1Te晶体,制备成10 mm×10 mm×2 mm大小的室温单平面探测器,研究了该探测器对²⁴¹Am@59.5 keV γ射线源的能谱响应。通过表征红外透过率、电阻率以及探测器能谱响应等参数,综合评定了探测器用CdMnTe晶体的质量、电学和探测器性能。结果表明,晶片的红外透过率均在55%以上,最好可达到60%。采用湿法钝化,100 V偏压下的漏电流由钝化前的9.48 nA降为钝化后的7.90 nA,钝化后的电阻率为2.832×10¹⁰ Ω·cm。在-400 V反向偏压下,CdMnTe探测器对²⁴¹Am@59.5 keV γ射线源的能量分辨率在钝化前后分别为13.53%和12.51%,钝化后的电子迁移率寿命积为1.049×10^-3 cm²/V。研究了探测器的能量分辨率随电压的变化特性,当偏压≤400 V时,探测器的能量分辨率主要由载流子的收集效率决定,而当偏压>400 V时,能量分辨率由漏电流决定。本文研究结果表明,Te溶剂Bridgman法生长的CdMnTe晶体质量较好,电阻率和电子迁移率寿命积满足探测器制备需求。     

Substrate temperature influenced ZrO2 films for MOS devices

The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO₂) dielectric films was investigated. Stoichiometric of the ZrO₂ thin films was obtained at an oxygen partial pressure of 4.0 × 10⁻² Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO₂/Si stacks with Al gate electrode. The dielectric properties of ZrO₂ layer and interface quality at ZrO₂/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10⁻⁷ to 0.64 × 10⁻⁹ A cm⁻² with the increase of substrate temperature from 303 to 673 K.