Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al_(0.45)Ga_(0.55)N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N_2 gas at 400 ℃.The reverse leakage current density of Al_(0.45)Ga_(0.55)N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.     

Dead cell and side leakage correction for a lead-scintillating fiber electromagnetic calorimeter

The electromagnetic calorimeter(ECAL) of the Alpha Magnetic Spectrometer(AMS-02) is one of the key detectors for dark matter searches. It measures the energies of electrons, positrons and photons and seperates them from hadrons. Currently, there are 5 dead cells in the ECAL, which affect the reconstructed energy of 4.2%of total events in the ECAL acceptance. When an electromagnetic shower axis is close to the ECAL border, due to the side leakage, the reconstructed energy is affected as well. In this paper, methods for dead cells and side leakage corrections for the ECAL energy reconstruction are presented. For events with the shower axis crossing dead cells,applying dead cell correction improves the difference in the reconstructed energy from 12% to 1%, while for events near the ECAL border, with side leakage correction it is improved from 4% to 1%.     

Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs

The photoluminescence(PL) and electrical properties of Al GaN/GaN high electron mobility transistors(HEMTs) with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an Fe_(Ga)~(3+/2+) acceptor level. This results in a decrease in the yellow luminescence(YL) emission intensity accompanied by the appearance of an infrared(IR) emission, and a decrease in the off-state buffer leakage current(BLC). However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.     

激光聚变空心玻璃微球靶丸充氖工艺

叙述了空心玻璃微球用渗透法进行高温充氖诊断气体工艺研究。分析了影响球内气体压力的一些因素;获得了向不同类型的玻璃微球中充氖诊断气体的最佳充气条件。利用该法在空心玻璃微球中充入了0.02～3MPa的氖诊断气体。     

电磁能量选择表面的场路协同仿真与实验研究

为研究能量选择表面的防护性能,采用PIN二极管Spice模型,通过时域的场路协同仿真得到了能量选择表面(ESS)的瞬态响应波形。对影响插入损耗和防护效能的参数进行研究,优化结构参数,减小了尖峰泄漏。研究表明,双层ESS较单层ESS能够有效防护反向脉冲,同时增加单元金属条的长度能够减小脉冲尖峰泄露。通过强电磁脉冲辐照实验,验证了ESS小信号传输与强电磁脉冲防护的自适应防护能力,为强电磁脉冲的防护提供了可靠的方法。     

一种传导电磁泄漏源的等效模型研究

在网络作战体系中, 电磁泄漏探测是敌对双方都十分重视的领域。电磁泄漏探测分为主动探测和被动探测两种, 其中主动探测由发射源对外发射信号, 通过检测具体位置处的信号特征, 得到被测设备、系统或网络的泄漏信息或其它特征信息。针对一种主动传导电磁泄漏发射源进行分析, 结合其工作机理和具体的试验现象, 提出了对应的等效模型。该等效模型按工作频率的高低, 分为高频等效天线模型和低频等效电路模型两类, 通过理论分析了该模型的准确性, 通过电路仿真验证了等效模型的正确性。通过该模型研究, 可以为后续电磁泄漏探测的数据分析提供有力的分析手段。     

基于ASDX/ASCX的火电厂电站管线漏电无损检测系统设计

为了提高火电厂电站管线漏电检测的准确性和实时性,并最大程度降低对管线的损坏,设计并实现了一种基于ASDX/ASCX的火电厂电站管线漏电无损检测系统。采用ASDX/ASCX传感器完成对电站管线漏电信号传播速度数据以及电站管线漏电信号所在管线高度数据等的采集,基于可编程逻辑控制器PLC(Program Logic Control,PLC),对采用传感器采集管线中的数据过程进行实时控制,通过实时分析采集的数据,进而实时的对管线进行无损检测,系统硬件设计给出了基于ASDX/ASCX三轴加速度传感器、ARM微处理器以及USB2085数据采集卡等硬件的设计原理,软件设计中,对PLC控制的软件平台选择及运行流程进行了详细设计,并给出了无损检测漏电信号TMS320VC5509A DSP处理流程。实验结果表明,系统控制误差在2%以内,比传统系统平均节能120J,运算效率提高22%左右。系统控制精度高,响应速度快,可靠性强,满足用户使用要求。     

Origin,characteristics, and suppression of residual nitrogen in MPCVD diamond growth reactor

Unintentional nitrogen incorporation has been observed in a set of microwave plasma chemical vapor deposition (MPCVD)-grown samples. No abnormality has been detected on the apparatus especially the base pressure and feeding gas purity. By a comprehensive investigation including the analysis of the plasma composition, we found that a minor leakage of the system could be significantly magnified by the thermal effect, resulting in a considerable residual nitrogen in the diamond material. Moreover, the doping mechanism of leaked air is different to pure nitrogen doping. The dosage of several ppm of pure nitrogen can lead to efficient nitrogen incorporation in diamond, while at least thousands ppm of leaked air is required for detecting obvious residual nitrogen. The difference of the dosage has been ascribed to the suppression effect of oxygen that consumes nitrogen. As the unintentional impurity is basically detrimental to the controllable fabrication of diamond for electronic application, we have provided an effective way to suppress the residual nitrogen in a slightly leaked system by modifying the susceptor geometry. This study indicates that even if a normal base pressure can be reached, the nitrogen residing in the chamber can be activated by the thermal effect and thus be incorporated in diamond material grown by a MPCVD reactor.     

Degradation behavior of deep UV-LEDs studied by electro-optical methods and transmission electron microscopy

Degradation mechanism of 265-nm deep ultraviolet light emitting diodes (UV-LEDs) has been investigated by means of electroluminescence, current-voltage measurement, capacitance-voltage measurement, and transmission electron microscopy (TEM) equipped with energy dispersive X-ray spectrometer (EDAX). It is revealed that a major degradation mode of UV-LEDs may be the leakage current induced optical degradation. The current pathway is demonstrated by TEM with EDAX, indicating that the contact metals can partially interact with p-type materials, which accelerate the degradation of LEDs. The presented results can help to understand the degradation mechanisms and improve the reliability of deep UV-LEDs.