Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5~nm/5~nm) film deposition. The surface morphology of wafers and the current--voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes.     

Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al_(0.45)Ga_(0.55)N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N_2 gas at 400 ℃.The reverse leakage current density of Al_(0.45)Ga_(0.55)N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.     

基于Nuttall窗三谱线插值的激光多普勒信号处理方法研究

快速傅里叶变换(FFT)是主要的激光多普勒测速系统信号处理方法,由于受到频谱泄露和栅栏效应的影响,其处理精度并不理想。基于Nuttall窗三谱线插值法的激光多普勒信号处理方法就是一种好的处理方法,它可以有效地抑制频谱泄漏和栅栏效应,改善信号分析精度,提高速度测量精度。由于Nuttall四项余弦窗的能量集中在主瓣,旁瓣非常小,因此加Nuttall四项余弦窗的FFT三谱线插值算法能够极大地减小频谱泄漏的影响,谱间干扰也很小,能很好地减小频谱泄漏和栅栏效应。     

溶胶-凝胶法制备MgO/(Ba0.8Sr0.2)TiO3多层薄膜及其介电和漏电特性研究

采用改进的溶胶-凝胶方法在LaNiO₃/Si(100)衬底上制备了MgO/(Ba_{0.8Sr0.2)TiO3多层薄膜.实验结果表明，MgO层的引入改变了(Ba0.8}Sr_0.2)TiO₃的介电特性和漏电流行为，使薄膜的漏电 流降低了3个数量级，但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性 以及微量Mg向(Ba_0.8关键词： 0.8Sr_0.2)TiO₃多层薄膜')" href="#">MgO/(Ba_0.8Sr_0.2)TiO₃多层薄膜 漏电流 介电常 数     

测量线路中的漏电来源及防护措施

本文以单臂电桥为例，分析测量线路中的漏电来源以及采取适当措施的方法。     

汽车空调系统应用新三元混合工质的试验研究

1前言汽车空调系统（MAq中目前广泛使用R12作为工质。由于R12的ODP值和GWP值都很大，根据＜＜蒙特利尔议定书＞＞，它是急需替代的工质，汽车空调的替代研究已迫在眉睫。混合工质用于汽车空调系统替代R12具有很大的潜力和应用前景。杜邦公司开发研制的由R22、R152a和R124组成的近共沸混合工质杜邦H元（MP系列）是一种R12替代物，它与R12热力学性质相近，制冷性能好，但作为其组分之一的R124目前产量很小，在我国尚未形成商业化产品，价格昂贵。考虑到我国的实际情况，本文提出由R22、R152a、R142b组成的新三元混合工质用于汽车空…     

真空丧失条件下液氦容器安全性试验

真空丧失对液氦容器的安全性是一大威胁,可能会造成十分严重的后果。通过试验,利用氦气及空气作为介质,对低温液氦容器在真空层发生泄漏情况下的漏热进行了研究。结果表明,多层绝热结构对于真空遭到破坏后的液氦容器能够起到一定的保护作用,而渗入到真空绝热层中气体的性质对于最终漏热情况也有影响,发现空气的“破坏力”明显小于氦气。     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃     

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

Metal-semiconductor diode of Au/n-GaAs is studied under the irradiation of swift heavy ion (SHI) beam (80 MeV ¹⁶O⁶⁺), using in situ current-voltage characterization technique. The diode parameters like ideality factor, barrier height, and leakage current are observed to vary with irradiation fluence. Significantly, the diode performance improves at a high fluence of 2 × 10¹³ ions cm⁻² with a large decrease of reverse leakage current in comparison to the original as deposited sample. The Schottky barrier height (SBH) also increases with fluence. At a high irradiation fluence of 5 × 10¹³ ions cm⁻² the SBH (0.62 ± 0.01 eV) is much larger than that of the as deposited sample (0.55 ± 0.01 eV). The diode parameters remain stable over a large range of irradiation up to fluence of 8 × 10¹³ ions cm⁻². A prominent annealing effect of the swift ion beam owing to moderate electronic excitation and high ratio of electronic energy loss to the nuclear loss is found to be responsible for the improvement in diode characteristics.     

基于Bell态和Bell测量的无信息泄露受控双向量子安全直接通信(英文)

提出一个无信息泄露的受控双向量子安全直接通信协议.协议中合法通信双方Alice和Bob在控制者Charlie的控制下实现彼此秘密信息的安全交换,利用3个Bell态纠缠交换后的测量相关性来克服信息泄露问题.由于该协议仅利用Bell态作为量子资源,而且仅需要进行Bell测量,所以方便实现.安全性分析表明,该协议不仅能检测到外部窃听者的主动攻击,而且还能检测到控制者Charlie的不诚实行为,因此,具备良好的安全性.