Rationalisation of the relationship between proton leakage and water flux through anion exchange membranes

Electromembrane concentration of nitric acid using anion exchange membranes has been studied in a laboratory pilot rig. The main factor limiting acid concentration has previously been reported to be proton leakage but in the present work water flux is also shown to be significant. Differential current efficiencies and mean water transport numbers are determined for each system via methematical manipulation of batch data. Water flux appears to be closely linked to proton leakage as an improvement in one of these leads to a deterioration of the other. Previous proton leakage theories have been developed further and a proton leakage and water flux model, based on sorbed species and their interactions within the membrane, has been postulated. It is suggested that the absolute amount of sorbed acid is more significant than the sorbed acid:water ratio. The model is validated by numerous cited publications, in addition to the data presented herein, to explain the performance variation of a given membrane when subjected to different operating conditions. Future work should consider water flux along with proton leakage as figures of merit for process evaluation, and investigate the applicability of the model to the comparative performance of different membranes when subjected to identical operating conditions.     

含负折射率材料空芯Bragg光纤的束缚损耗特性

将负折射率材料引入到空芯Bragg光纤包层中,形成具有正负折射率介质层交替的空芯Bragg光纤,运用传输矩阵理论对该Bragg光纤的束缚损耗特性进行分析和计算,并与传统的全正折射率介质层Bragg光纤的束缚损耗进行对比。结果发现:在最低损耗方面含负折射率材料的空芯Bragg光纤没有表现出任何优势,但在最低损耗点附近的损耗小于全正折射率介质层Bragg光纤,损耗曲线比较平滑,并且传输波长范围较宽;当空气作为一个介质层的材料时,两种Bragg光纤的束缚损耗特性几乎一致;当减小包层折射率对比时出现了与全正折射率介质层Bragg光纤不同的现象,损耗曲线变的更为平滑,说明传输波长范围变宽了。     

模糊故障树分析法在航空发动机滑油渗漏分析中的应用

目的：为准确查找航空发动机滑油渗漏原因,研究模糊故障树理论在飞机故障诊断方面的应用。方法：以CFM56-7B发动机滑油系统为研究对象,将故障树理论应用于滑油系统渗漏故障诊断中,采用下行法求解最小割集得到故障诱因最小事件。根据滑油故障发生概率具有模糊和不确定性特点,结合Delphi专家调查采用模糊数学理论进行定量分析,确定故障诱因事件风险重要度排序。结果：从CFM56-7B滑油渗漏故障原因重要度排序可知,故障诱因依次为后收油池供油口盖封严损坏（x1）、后收油池滑油回油管接头处裂纹(x2)、发动机使用MJO291滑油后导致密封材料损坏（x8)等,维修时应注意。结论：维修单位故障记录验证了方法的有效性,可为准确和快速诊断和排除滑油渗漏故障提供参考。     

不同负荷低加内部泄漏故障神经网络诊断研究

针对600MW火电机组低压加热器系统内部泄漏故障,提出一种基于神经网络的以最大故障分离度为目标的寻优技术。采用征兆模糊计算方法对典型故障样本进行规整化处理,建立了低加内部泄漏故障诊断的神经网络模型。结合征兆缩放优化技术和神经网络诊断模型,对不同负荷下不同程度低加内部泄漏故障进行实时仿真实验。实验表明上述方法对不同负荷下程度迥异的低加故障均可得到具有高故障分离度的正确诊断结果,可准确诊断低加内部泄漏故障,具有较好的工程实用性。     

Existence and exponential stability of almost‐periodic solutions for neutral BAM neural networks with time‐varying delays in leakage terms on time scales

This paper is concerned with neutral bidirectional associative memory neural networks with time‐varying delays in leakage terms on time scales. Some sufficient conditions on the existence, uniqueness, and global exponential stability of almost‐periodic solutions are established. An example is presented to illustrate the feasibility and effectiveness of the obtained results. Copyright © 2015 John Wiley & Sons, Ltd.     

复合漏电模型建立及阶梯场板GaN肖特基势垒二极管设计

准垂直GaN肖特基势垒二极管(SBD)因其低成本和高电流传输能力而备受关注.但其主要问题在于无法很好地估计器件的反向特性,从而影响二极管的设计.本文考虑了GaN材料的缺陷以及多种漏电机制,建立了复合漏电模型,对准垂直Ga N SBD的特性进行了模拟,仿真结果与实验结果吻合.基于此所提模型设计出具有高击穿电压的阶梯型场板结构准垂直GaN SBD.根据漏电流、温度和电场在反向电压下的相关性,分析了漏电机制和器件耐压特性,设计的阶梯型场板结构准垂直GaN SBD的Baliga优值BFOM达到73.81 MW/cm~2.     

Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process

A systemic and comprehensive ESD-induced parasitic model is presented in this paper, which is used to analyse the parasitic influences of electrostatic discharge (ESD) protection circuits on the performance of radio frequency applications. A novel low-parasitic ESD protection structure is made in a 0.35\mum 1P3M silicide CMOS process. The measured results show that this novel structure has a low parasitic capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD robustness target about 5kV human body model.     

CdZnTe探测器晶片的表面处理工艺

报道了CdZnTe探测器晶片表面钝化工艺对其性能的影响.先采用金相砂纸和化学腐蚀剂对CdZnTe晶片进行机械和化学抛光,然后分别用H2O2溶液和NH4F/H2O2溶液对晶片进行湿法钝化;再用ZC36微电流测试仪和扫描电镜测试研究了不同钝化时间对CdZnTe晶片电学性质和表面形态的影响.结果发现:用NH4F/H2O2溶液对CdZnTe探测器晶片进行钝化30min,晶片表面形成一层完整的高阻氧化层,表面漏电流最小、晶体电阻率提高1～2个数量级,达到109～10Ω·cm,适合探测器的制备.     

人工晶体生长设备真空系统的优化设计

真空系统的应用在现代科研生产领域中起着越来越重要的作用,越来越被人们所重视.真空系统设计的好坏,直接影响着晶体生长设备的成功与否,而提高真空系统的密封性,降低真空系统的漏气率是提高真空性能的主要措施.本文简要阐述了提高真空系统的密封性和降低漏气率的一些措施,包括真空系统设计中的结构设计、密封形式的选择、密封材质的选用等,提出了一种新型的静密封结构,从而提高了真空系统的密封性能.     

应力导致的薄栅氧化层漏电流瞬态特性研究

分别研究了FN隧穿应力和热空穴(HH)应力导致的薄栅氧化层漏电流瞬态特性.在这两种应力条件下,应力导致的漏电流(SILC)与时间的关系均服从幂函数关系,但是二者的幂指数不同.热空穴应力导致的漏电流中,幂指数明显偏离-1,热空穴应力导致的漏电流具有更加显著的瞬态特性.研究结果表明:热空穴SILC机制是由于氧化层空穴的退陷阱效应和正电荷辅助遂穿中心的湮没.利用热电子注入技术,正电荷辅助隧穿电流可被大大地减弱.