Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

The hot-carrier degradation for 90~nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate voltage (LGV) (at V_g=V_th, where V_th is the threshold voltage) stress has been investigated. It is found that the drain current decreases and the threshold voltage increases after the LGV (V_g=V_th stress. The results are opposite to the degradation phenomena of conventional NMOSFET for the case of this stress. By analysing the gate-induced drain leakage (GIDL) current before and after stresses, it is confirmed that under the LGV stress in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot holes are trapped at interface in the LDD region and cannot shorten the channel to mask the influence of interface states as those in conventional NMOSFET do, which leads to the different degradation phenomena from those of the conventional NMOS devices. This paper also discusses the degradation in the 90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at V_g=V_th with various drain biases. Experimental results show that the degradation slopes (n) range from 0.21 to 0.41. The value of n is less than that of conventional MOSFET (0.5-0.6) and also that of the long gate length LDD MOSFET (\sim0.8).     

基于区域分解算法的叶顶间隙流场的数值模拟

本文采用Marini－Quarteroni的不重叠区域分解算法和“镶嵌”式间隙网格技术,开发了可计算叶项间隙流场的N－S方程求解程序。通过计算结果同实验显示结果的比较表明,本文的计算方法不仅可以很好地描述叶顶间隙流动的细节,而且在复杂区域流场计算中是非常有效的。本文指出在叶栅存在间隙时,前缘产生什么样的拓扑结构不仅取决于相对间隙的大小,同时也取决于叶栅的负荷情况。     

一种用于高压输气管道泄漏检测的次声传感器的研究

研究了一种用于检测高压输气管道泄漏次声波的次声传感器。针对管道泄漏频带宽,频率低的特点,该次声传感器换能元件选用电容式传声器,设计了一个前端耐压壳,将前端敏感单元与前置放大器隔离,可耐12 MPa静态压力;通过对比信号放大电路,实现了对调制电路优化设计,使得在1 Hz以下频段仍有较高灵敏度,传感器自噪声降低;该传感器只对声波敏感,对振动的灵敏度平均值1 mV/g,具有很好的抗振动干扰性能。测试结果表明：该传感器能有效地检测到声波信号,频率响应范围0.5 Hz至300 Hz,覆盖了管道泄漏次声频带和低频可听声频段,不放大的Ⅰ档灵敏度200 mV/Pa,Ⅱ档和Ⅲ档分别将信号放大5倍和20倍,输出信号的自噪声小于15 mV,该传感器可适用于天然气输气管道的泄漏监测。     

Existence and exponential stability of almost periodic solutions for neutral‐type BAM neural networks with distributed leakage delays

This paper is concerned with a class of neutral‐type BAM neural networks with distributed leakage delays. By applying the exponential dichotomy of linear differential equations, Lyapunov functional method and contraction mapping principle, we establish some sufficient conditions which ensure the existence and exponential stability of almost periodic solutions for such BAM neural networks. An example is given to illustrate the effectiveness of the theoretical findings. The results obtained in this article are completely new and complement the previously known studies. Copyright © 2016 John Wiley & Sons, Ltd.     

W-型单模单偏振光纤截止基模的能量损耗

给出了一种新的数值计算W型单模单偏振光纤截止基模能量损耗的方法－－区域模场边界条件匹配法。用这种方法分析了截止基模能量损耗与光张结构参数的关系。得出了截止基模能量损耗随椭圆内包层长半轴、短半轴或内包层折射率深度的增加而迅速减小，以及高椭圆度内包层情形下截止基模能量损耗仅由内包层短半轴、内包层折射度和纤芯－外包层相对经差确定的结论；同时得出了截止基模能量损耗与纤芯－外包层相对折射率差的平方根成正比的解析结果。最后将数值计算和实验进行了比较，两者较为一致。     

线偏振器对偏振法折射率测量的影响

在一阶近似下，本文着重分析了偏振法折射率测量中线偏振器漏光误差和转角误差的影响，并导出了有关公式。数据计算表明，当线偏振器位于反射光路中时，转角误差影响最大，若转角误差小于５′时，由此产生的折射率误差约为５．５×１０（－７），此时漏光误差不影响折射率测量精度。当线偏振器位于人射光路中时，若利用中高精度线偏振器（消光比１０（－５）），则由此产生的折射率测量误差约为２．３×１０（－７）。相对该方法的随机误差１０（－５），无论线偏振器位于反射光路或入射光路中，由它产生的折射率测量误差均可忽略不计。     

Numerical Study on the Waveguiding Properties of Photonic Crystal Fibers

The photonic band structure, mode field distribution, and leakage loss of different photonic crystal fibers are studied by the full vectorial plane wave expansion method and an extended beam propagation method. A comparison on the waveguiding mechanism is conducted among solid-core triangular-lattice PCF, air-core honeycomb PCF, and solid-core honeycomb PCF. For the latter two structures, which conduct light by the photonic bandgap effect, the advantages of down-doped solid-core honeycomb structure are demonstrated for its Gaussian-like mode field distribution and low leakage loss. A combined study on the leakage loss and band structure of solid-core honeycomb PCF has revealed the distinctive properties of photonic bandgap effect.     

轴流压气机转子内流数值模拟及叶顶间隙泄漏分析

本文数值求解N—S方程和Euler方程对比分析单转子轴流压气机内部流场、计算较好地预测了压气机的平均流场及叶尖泄漏涡的生成演化过程。为分析泄漏流动的成因，本文采用简化模型计算泄漏速度。计算与实验结果的时比表明，泄漏流动是无私流动，粘性主要表现为对涡的衰减；泄漏流动由叶片两侧的转了静压控制，粘性在叶片两侧作用持平；给定叶片两侧的转子静压即可由Bernoulli方程求出泄漏速度。     

三相供电线路的漏电流分布规律

面对安全用电的严峻形式 ,经国内外的实践证明 ,安装使用漏电保护开关对于防止触电身亡 ,避免设备接触地故障损坏和漏电引起火灾事故 ,及减少漏电引起的电能损耗 ,具有明显效果。然而对于漏电保护开关的跳闸临界值具有很大歧义 ,因此我们首先对漏电流进行分布拟合 ,将得出的参数值进行随机模拟 ,以此来制定漏电保护开关的跳闸临界值     

Influence of cations on the proton leakage through anion-exchange membranes

In the recovery of acids from wastewaters or the regeneration of acids and bases from salts by electromembrane processes, the most important phenomenon which limits the current efficiency is the transport of protons through the anion-exchange membrane (AEM). In this work, the proton leakage through an AEM is studied with a system containing hydrochloric acid or sulfuric acid on the cathodic side and the mixture of acid with one homoanionic salt (Li⁺, Na⁺, K⁺, Cr³⁺, NH₄⁺, (CH₃)₄N⁺ and (C₂H₅)₄N⁺) on the anodic side. The proton leakage is quantified from the value of the proton transport number. The results are analyzed assuming that the rate determining step of proton leakage is the interfacial transfer reaction of protons from the aqueous anodic solution to the membrane. The proton leakage is enhanced by the polarizing power of the cation. The transfer of protons into the membrane seems to be catalyzed by the presence of a layer of adsorbed cations on the surface of the membrane. The presence of salt decreases the proton leakage but it is always greater with H₂SO₄ solutions compared to HCl solutions.