钍基熔盐堆用238群中子-48群光子耦合多群常数库的屏蔽基准验证

采用OKTAVIAN脉冲球实验对钍基熔盐堆用AMPX主库格式238群中子-48群光子耦合多群常数库进行了屏蔽基准验证,重点检验了该库中的F,Li,Be,C、Al,Si,Cr,Ni,Zr,Co,Cu,Mn,Mo,Nb,Ti,W,Pb同位素/元素的数据。采用SCALE 5.1程序系统中的XSDRN-PM程序进行一维屏蔽问题计算,将计算结果与实验测量数据及MCNP程序计算结果进行比较,发现中子泄漏谱的符合程度较好,而光子泄漏谱检验中发现大多数核素都出现了不同程度的高估。通过对GENDF格式到AMPX格式的转换程序MILER-4进行修正,解决了这一问题。通过对多群常数库的屏蔽基准验证,进一步证明了该库的可靠性。OKTAVIAN pulsed sphere experiment was used for Shielding Benchmarks of the AMPX formatted multi-group (238n-48γ) coupled neutron-gamma cross-section library for Thorium Molten Salt Reactor, of which the following isotopes/elements were checked-F, Li, Be, C, Al, Si, Cr, Ni, Zr, Co, Cu, Mn, Mo, Nb, Ti, W. One dimension shielding problem was calculated using XSDRN-PM program of SCALE 5.1 code system and results were compared with experiment results and MCNP calculated results, which shows that neutron leakage spectra agree well. Calculated results of photon leakage spectra of most facilities compared with MCNP results and experiment data are over-rated. MILER-4 code which is used for converting GENDF files produced by NJOY to the AMPX master library format is revised to solve this problem. The shielding benchmark verifications confirm the reliability of this new library.     

CdZnTe晶片表面钝化后的热处理研究

报道了CdZnTe晶片表面钝化后,热处理工艺对其性能的影响.先采用30;的H2O2钝化抛光好的CdZnTe 晶片,然后在恒温干燥箱中进行热处理;最后使用ZC36微电流测试仪、EDX能谱仪和扫描电镜(SEM)研究热处理对钝化后的CdZnTe晶片表面的电学性能、表面成分以及表面形貌的影响.分析表明:CdZnTe钝化后在大气氛围120℃下热处理40 min,表面H2TeO3、H6TeO6等分解较为完全,晶片表面氧化层分布均匀,表面漏电流显著减小,晶体电阻率提高1～2个数量级,对提高探测器的性能有重要作用.     

基于激光吸收光谱技术天然气管道泄漏定量遥测方法的研究

报道了基于激光吸收光谱学原理的天然气管道泄漏移动遥测技术,通过模拟天然气泄漏实验, 分析了移动遥测的关键技术问题.为了定量遥测天然气管道微量泄漏,引入一个和剩余幅度调制(RAM) 等值反相的信号对偏差进行补偿,降低RAM对谐波信号的影响,提高系统检测灵敏度. 针对遥测回波吸收光谱特征,提出了改进软阈值小波去噪法,就提高系统信噪比而言, 比传统软阈值去噪法高2倍多,同时对二次谐波(2f)信号形状也有很好的保留,通过探测限计算, 系统移动遥测灵敏度达到80 ppm/m.     

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping(2D-VRH) model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.     

Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors

Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO₃ dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO₃ would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.

Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal.     

磁共振增强扫描造影剂外漏原因及内科护理

本文探讨磁共振增强扫描造影剂外漏的影响因素及相关护理问题.36例造影剂外漏患者为实验组,30例非造影剂外漏患者为对照组,收集两组患者的临床资料进行整理分析.结果发现,实验组中,年龄≤10岁或≥65岁患者、患有血管性疾病和肿瘤性疾病患者、穿刺静脉、注射速度快、注射渗透压高时,造影剂外漏均高于对照组(P＜0.05).多因素...     

PIN限幅器PSpice模拟与实验研究

 从PIN二极管基区双极载流子扩散方程出发,通过拉普拉斯变换求解得到PIN二极管子电路模型,从而通过PSpice软件瞬态数值模拟得到了PIN限幅器的尖峰泄漏、平顶泄漏与脉冲功率、上升时间关系。对于I层厚度一定的限幅器,模拟与实验表明脉冲前沿越大,尖峰泄漏功率插入损耗越大,脉冲前沿过缓则可能没有尖峰泄漏现象;尖峰泄漏功率随着输入功率的增加而变大,但尖峰泄漏功率插损也随之增大;尖峰脉冲宽度与I层厚度、输入功率及脉冲前沿均有关系。限幅器尖峰泄漏与平顶泄漏模拟结果与实验数据基本一致。     

盐胁迫下匍匐翦股颖高光谱分析与电解质渗透率反演

叶片电解质渗透率是反映植物细胞渗透性的一个重要指标,对草坪草遭受盐胁迫的研究有重要意义。针对叶片电解质渗透率传统检测方法,耗时长,损伤叶片,无法大面积监测等弊端,探讨了用高光谱快速无损检测叶片电解质渗透率的方法。以匍匐翦股颖(Agrostis stolonifera)为对象,在温室中水培两周后进行浓度分别为0(对照),100和200 mmol·L-1的盐处理,7 d后按间隔7 d取样3次,共72个样。每次取样时先测量样品的光谱值,然后采用电导率法测定叶片电解质渗透率。分析匍匐翦股颖三种盐处理与光谱反射率之间的关系和差异,对三种盐处理的光谱反射率计算归一化植被指数和差值植被指数,采用差分法计算光谱反射率的一阶微分,同时计算出蓝、绿和红光的三边参数,分析叶片电解质渗透率与光谱反射率、归一化植被指数、差值植被指数和三边参数的相关性。利用叶片电解质渗透率和各光谱数据相关程度高的数据,对校正集采用一元线性回归、多元线性回归和偏最小二乘回归法构建叶片电解质渗透率反演模型,用预测集检验反演模型。结果表明：盐胁迫与叶片高光谱在450～700 nm波段呈正相关;叶片电解质渗透率与450～732 nm波段反射率在0.01水平上显著相关;三边参数中绿边幅值和绿边面积与叶片电解质渗透率显著相关;采用偏最小二乘回归法建立的反演模型精度最好,建模和反演预测的决定系数分别达到了0.681和0.758,均方根误差分别为7.124和7.079。偏最小二乘法构建的反演模型实现了盐胁迫下匍匐翦股颖叶片电解质渗透率的快速无损检测,也为采用高光谱实时监测盐胁迫对匍匐翦股颖及其同类植物的伤害提供了依据和理论参考。     

磁体和线圈相对静止的发电装置

如果说磁体和线圈相对静止可以输出电能,或许谁都不会相信,因为法拉第的电磁感应明确表明相对运动是最重要的。如果说在相对静止的磁体和线圈之间有一个圆筒转子,转子上有两个对称的孔(起到漏磁作用),这两个孔正好与磁体和线圈同心,电磁感应规律证明这的确是一台发电机。     

硅p-n结太阳电池对DF激光的响应

 对硅p-n结太阳电池在DF激光辐照下的响应进行了理论和实验研究。推导了p-n结反向饱和电流随温度的近似变化关系。根据该近似关系，计算了太阳电池在DF激光辐照过程中输出电压的变化曲线。计算结果和实验结果之间取得了比较好的一致性。