岩石中化学爆炸气体渗漏行为的实验研究

通过小药量化爆模拟实验,研究了岩石中满足缩比关系的不同药量化学爆炸一氧化碳渗漏时间、渗漏份额与药量的关系。研究结果表明:相同介质中缩比爆炸实验气体渗漏时间大致与药量的三分之二次方成正比,渗漏停止时间也大致与药量的三分之二次方成正比;封闭空间内化学爆炸在爆室内产生的高温能够使爆室内一些物质分解产生非冷凝气体;对于不同药量的缩比实验,小药量实验的气体渗漏份额不小于大药量实验的气体渗漏份额。根据此研究结果,可以用小药量地下爆炸气体渗漏行为的监测结果预估大药量实验的气体渗漏行为。     

A generalized model of an irreversible thermal Brownian refrigerator and its performance

A generalized model of an irreversible thermal Brownian refrigerator, which consists of Brownian particles moving in a periodic sawtooth potential with external forces and contacting with the alternating hot and cold reservoirs along the space coordinate, is established in this paper. The heat flows driven by both potential and kinetic energies of the particles as well as the heat leakage between the hot and cold reservoirs are taken into account. The optimum performance of the generalized model is analyzed using the theory and method of finite time thermodynamics. The analytical expressions for cooling load, coefficient of performance (COP) and power input of the Brownian refrigerator are derived. It is shown by numerical examples that due to the heat leakage between the heat reservoirs and heat flow via the change of kinetic energy of the particles, the Brownian refrigerator is always irreversible and the COP can never attain the Carnot COP. The influences of the heat leakage, the external force, barrier height of the potential, asymmetry of the sawtooth potential and temperature ratio of the heat reservoirs on the performance of the Brownian refrigerator are also investigated in detail. The effective regions of external force and barrier height of the potential in which the Brownian motor can operate as a refrigerator are determined. It is found that the performance of the Brownian refrigerator depends strictly on the design parameters. If these design parameters are properly chosen, the Brownian refrigerator can be controlled to operate in the optimal regimes. The results obtained herein about the general Brownian refrigerator model include those obtained in many previous literatures.     

折射率平面波导光栅耦合特性分析

利用波导系统等效网络分析法,分析了折射率平面波导光栅的耦合特性.计算了影响光栅输入输出耦合的重要参数——损耗系数α,并通过数值计算分析了平面波导光栅各参数对损耗系数的影响.     

自组装超薄膜修饰Ta2O5介质膜及其特性研究

采用静电自组装方法在五氧化二钽(Ta2O5)介质氧化膜上制备了聚二烯丙基二甲基氯化铵(PDDA)/聚苯乙烯磺酸钠(PSS)和聚二烯丙基二甲基氯化铵/聚-3,4-乙烯二氧噻吩-聚苯乙烯磺酸钠(PEDOT-PSS)超薄膜.研究了两种自组装超薄膜在Ta2O5介质氧化薄膜上的组装特性.结果表明两种自组装膜能够稳定地组装于Ta2O5介质膜表面,并有效降低薄膜的表面粗糙度.进一步研究了两种自组装超薄膜修饰的Ta2O5电容结构的电性能.结果表明静电自组装膜对Ta2O5介质膜表面进行修饰后,有效地隔离了介质氧化膜中的缺陷,降低了电容的漏电流并提高耐电压能力;研究还发现不同厚度的超薄膜对Ta2O5电容结构的耐压特性有不同程度的影响,较厚的薄膜可以更好地提高电容的耐压能力并降低漏电流,但会增加电容的等效串联电阻(ESR).另外,在相同薄膜层数的情况下,聚合物电解质PEDOT-PSS良好的导电性能降低了复合超薄膜的电阻,使得PDDA/PEDOT-PSS修饰的电容结构ESR值较低.     

Substrate temperature influenced physical properties of silicon MOS devices with TiO2 gate dielectric

DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO₂) films. The films were formed on Corning glass and p‐Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6×10^?2 Pa and at different substrate temperatures in the range 303 – 673 K. The films formed at 303 K were X‐ray amorphous whereas those deposited at substrate temperatures ≥ 473 K were transformed into polycrystalline nature with anatase phase of TiO₂. Fourier transform infrared spectroscopic studies confirmed the presence of characteristic bonding configuration of TiO₂. The surface morphology of the films was significantly influenced by the substrate temperature. MOS capacitor with Al/TiO₂/p‐Si sandwich structure was fabricated and performed current–voltage and capacitance–voltage characteristics. At an applied gate voltage of 1.5 V, the leakage current density of the device decreased from 1.8 × 10^?6 to 5.4 × 10^?8 A/cm² with the increase of substrate temperature from 303 to 673 K. The electrical conduction in the MOS structure was more predominant with Schottky emission and Fowler‐Nordheim conduction. The dielectric constant (at 1 MHz) of the films increased from 6 to 20 with increase of substrate temperature. The optical band gap of the films increased from 3.50 to 3.56 eV and refractive index from 2.20 to 2.37 with the increase of substrate temperature from 303 to 673 K. Copyright © 2012 John Wiley & Sons, Ltd.     

Dy,Co共掺杂对BiFeO3陶瓷磁特性和磁相变温度Tc的影响

采用快速液相烧结法制备BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0, 0.05, 0.1, 0.15)陶瓷样品. 实验结果表明: 所有样品的主衍射峰与纯相BiFeO₃相符合且具有良好的晶体结构, 随着Co³⁺掺杂量的增大, Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品的主 衍射峰由双峰(104)与(110)逐渐重叠为单峰(110), 当掺杂量x>0.05时, 样品呈现正方晶系结构; SEM形貌分析可知: Dy³⁺, Co³⁺共掺杂使BiFeO₃晶粒尺度由原来的3—5 μ减小到约1 μ. 室温下, BiFeO₃样品表现出较弱的铁磁性, 随着Dy³⁺和Co³⁺掺杂, BiFeO₃样品的铁磁性显著提高. 在外加磁场为30 kOe的作用下, Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0.05, 0.1, 0.15)的M_r分别为0.43, 0.489, 0.973 emu/g; M_S分别为0.77, 1.65, 3.08 emu/g. BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品磁矩M随着温度T的升高而逐渐减小, Dy掺杂使BiFeO₃样品的T_N由644 K升高到648 K, 而T_C基本没有变化. Dy和Co共掺杂导致BiFeO₃样品磁相变温度T_C由870 K降低到780 K, 其T_C变化主要取决于Fe-O-Fe反铁磁超交换作用的强弱和磁结构的相对稳定性. 关键词： 铁磁电材料 磁滞回线 磁相变温度     

AlGaN/GaN 高电子迁移率晶体管漏电流退化机理研究

本文首先制备了与AlGaN/GaN高电子迁移率晶体管 (HEMT) 结构与特性等效的AlGaN/GaN异质结肖特基二极管, 采用步进应力测试比较了不同栅压下器件漏电流的变化情况, 然后基于电流-电压和电容-电压测试验证了退化前后漏电流的传输机理, 并使用失效分析技术光发射显微镜 (EMMI) 观测器件表面的光发射, 研究了漏电流的时间依赖退化机理. 实验结果表明: 在栅压高于某临界值后, 器件漏电流随时间开始增加, 同时伴有较大的噪声. 将极化电场引入电流与电场的依赖关系后, 器件退化前后的 log(I_FT/E)与√E 都遵循良好的线性关系, 表明漏电流均由电子Frenkel-Poole (FP) 发射主导. 退化后 log(I_FT/E)与√E 曲线斜率的减小, 以及利用EMMI在栅边缘直接观察到了与缺陷存在对应关系的“热点”, 证明了漏电流退化的机理是: 高电场在AlGaN层中诱发了新的缺陷, 而缺陷密度的增加导致了FP发射电流I_FT的增加. 关键词： AlGaN/GaN 高电子迁移率晶体管 漏电流 退化机理     

铁电薄膜漏电流的应变调控

基于密度泛函理论的第一性原理并结合非平衡格林函数, 探讨了应变对 BaTiO₃ 铁电薄膜漏电流的影响规律.研究表明,压应变能有效地抑制BaTiO₃ 铁电薄膜漏电流, 特别是当压应变为4%时,其漏电流相对无应变状态降低了近10 倍.通过考察体系的透射系数和电子态密度发现: 一方面压应变状态下铁电隧道结的透射几率要比张应变时小,特别是在费米面附近;另一方面随着张应变过渡至压应变时,价带的位置逐渐向低能区移动而导带向高能区移动,导致了其带隙的增大, 从而有效抑制了漏电流. 本研究为寻找抑制铁电薄膜漏电流,提高铁电薄膜及铁电存储器的性能提供合适的方法. 关键词： 铁电薄膜 双轴应变 漏电流 第一性原理     

用于反应堆中子/γ 射线混合场测量的涂硼电离室性能

近年来,涂硼电离室已逐渐成为核反应堆周围大通量中子/γ射线混合场监测的辐射探测器之一. 研制了一种高灵敏度涂硼电离室,并给出了其内部结构.用fA级弱电流放大器测得: 当涂硼电离室的工作电压在700 V以下时,漏电流小于1.0 pA; 用Am-Be中子源辐照时测得涂硼电离室的电流曲线坪长为500 V, 坪斜为3.72×10^-4 V^-1;当涂硼电离室的工作电压为400 V时, 对应漏电流为0.4 pA.测试表明涂硼电离室中子信号电流与辐照源的相对位置有关, 将Am-Be中子源置于距石蜡慢化体底部8 cm时,测得中子信号电流最大值为2.0 pA. 用¹³⁷Cs和⁹⁰Sr辐照时测得涂硼电离室γ射线信号电流为 1.0---2.0 pA,但在γ射线场中坪特性不如中子场中坪特性明显. 电离室中子探测灵敏度达1.0×10^-15 Acm²s量级, γ射线探测灵敏度达9.0× 10^-22 Acm²s·eV^-1量级. 这种涂硼电离室漏电流小、灵 敏度高、坪特性好,可用于反应堆周围的中子/γ射线混合场测量.