本征Josephson单结的电流-电压特性

采用光刻蚀和Ar离子刻蚀技术成功地在Bi-2212单晶表面制备出台阶型本征Josephson单个结，并在5-65K范围内用四引线法测量了该结零场下的Ⅰ～Ⅴ特征曲线．结果表明，临界电流几乎保持不变，但返回电流随温度增加而增大；与此同时，Mccumber参数βc随着温度增加而减小．临界温度附近，跳跃电压△V明显偏离BCS理论．     

Gel formation with multiple interunit junctions. II—mixture of different functional molecules

Number‐ and weight‐average molecular weight of condensation polymers formed in the mixture of primary molecules carrying different species of functional groups A and B are derived by the cascade theory. These functional groups are allowed to form multiple junctions of arbitrary multiplicity k. From the weight average, the gel point condition is found to be given by 1 ? (f_w ? 1)(μ_A,A ? 1) ? (g_w ? 1)(μ _B,B ? 1) + (f_w ? 1)(g_w ? 1)D_μ = 0, where f_w and g_w are average functionality of the primary molecules, μ _αβ the average multiplicity of β groups in the junctions where a path of an α‐group enters, and D_μ ≡ (μ_A,A ? 1)(μ _B,B ? 1) ? μ _A,Bμ _B,A the multiplicity determinant. Possible applications to thermoreversible gelation are suggested. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 2413–2421, 2003     

对半导体pn结接触电势的一个讨论

讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题．从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡(零偏下)时pn结不可能对外输出电压和电流的原因．     

Magneto-transport properties of La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3 tunnel junction

Hole-doped rare-earth manganite La_0.7Ca_0.3MnO₃ and the electron-doped manganite La_0.7Ce_0.3MnO₃ both show a metal-insulator transition around 250 K associated with a ferromagnetic transition and colossal magnetoresistance. In an earlier publication we have reported the rectifying characteristic of La_0.7Ca_0.3MnO₃/SrTiO₃/La_0.7Ce_0.3MnO₃ tunnel junction at room temperature, showing that it is possible to fabricate a diode out of the polaronic insulator regime of doped manganites. Here we report the magneto-transport properties of such a tunnel junction above and below the metal-insulator transition. We show, from the large positive magnetoresistance of the tunnel junction at low temperature, that La_0.7Ce_0.3MnO₃ could be a minority spin carrier ferromagnet. The implication of this observation is discussed.     

Ag/InP Schottky结热退化机理的研究

Ag/InP Schottky结是制作TE场助光电阴极的关键,本文利用Auger分析技术,详细地研究了热处理对Ag/InPSchottky结界面特性的影响。实验结果表明高温长时间热处理会导致严重界面相互扩散,同时使Schottky结的势垒高度降低,理想因子增大,泡利负电性理论很好地解释了扩散效应。势垒高度的降低及理想因子的增大也是由界面互扩散造成的,这种扩散导致界面特性由Schotthy特性向欧姆性质转化。为防止界面互扩散及Schottky结特性的退化,可选用负电性小的金属制作Schottky结,并在工艺上尽量减少热处理的温度和时间。     

压电材料中切口/接头端部平面电弹性场奇异性有限元分析

为了对平面载荷作用下压电材料中切口或接头端部附近电弹性场奇异性问题进行分析，首先以应力平衡方程、Maxwell方程和和边界条件为基础，得到一种求解压电材料特征问题的弱式方程；其次，假定楔形切口或接头端部附近单元内位移和电势沿径向分布为指数形式，而周向方向分布则采用泡函数插值，将其代入弱式方程，建立一种只需对楔形切口或接头端部附近周边进行离散的一维简单有限元方法．压电材料的极化轴可以是任意方向．利用该有限元模型讨论了楔形切口角度、极化轴方向和边界条件对奇性场的影响．通过和其它特定情况下的现有解相比，证实了该文有限元数值方法的有效性，而且精度很高．     

Electrical and Thermoelectrical Behavior of Binary Composites of Phosphate Glass Loaded with Zinc Fillers: Promising Materials for Photovoltaic’s

Homogeneous xPbO?(1?x) P₂O₅ glasses where 0 % :σ x<100 % have been successfully synthesized using a melt‐quenching method. The short range structures of the prepared samples were examined by Fourier transform infrared spectroscopy, x‐powder diffraction and scanning electron microscopy. The most stable vitreous phase is of composition 45 mol%PbO‐55 mol%P₂O₅; it was loaded with zinc volume fraction. We carried out experimental and simulative investigations of the electrical characteristics of p? n junction; the obtained results indicated that conductivity of the composites increases by increasing dopent concentration. It was also observed that the current voltage characteristics of the composite were found to be ohmic in nature, wherein drastic drop of the electrical conduction was observed at an accurate temperature of 405 K. Electrical behavior of the composites as function of filler concentration and versus temperature were explained respectively by percolation theory and positive temperature coefficient effect.     

具有Washer型输入线圈的超导量子干涉放大器的制备与表征

超导量子干涉仪(SQUID)放大器具有低输入阻抗、低噪声、低功耗等优点, 目前被广泛用于微弱信号的检测领域. 与其他工艺相比, Nb/Al-AlO_x/Nb结构的约瑟夫森结具有相对较高的转变温度(T_c)、高的磁通电压调制系数以及良好的热循环能力、较宽的临界电流范围, 因此是制备SQUID放大器的很好选择. 设计并制作了欠阻尼、过阻尼约瑟夫森结以及具有Washer型输入线圈的单SQUID放大器, 通过在He³制冷机3 K温区下对器件电流-电压特性进行测量, 得到良好的结I-V特性曲线、SQUID调制特性, 初步实现利用SQUID进行放大作用, 并计算了SQUID的电流分辨率. 此项工作对于超导转变边沿传感器读出电路的实现具有重要的意义.