单室沉积非晶硅/非晶硅/微晶硅三叠层太阳电池的研究

在产业化比较成熟的单室沉积非晶硅薄膜太阳电池基础上,进行了非晶硅/非晶硅/微晶硅三叠层太阳电池性能优化的研究.在生产线上纯单室沉积的非晶硅/非晶硅叠层太阳电池基础上,通过调节n-p隧穿结并采用自行研制开发的单室微晶硅底电池的沉积路线,获得了单室沉积的光电转换效率达到9.52%的非晶硅/非晶硅/微晶硅三叠层太阳电池. 关键词： 硅基薄膜太阳电池 三叠层 微晶硅     

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.     

Tunnel magnetoresistance of magnetic junctions with cubic symmetry of the layers

A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching of the layers is analyzed for a magnetic field perpendicular to the initial magnetizations. In such a situation, an additional peak in the tunnel magnetoresistance ratio appears at the magnetic field value that is substantially lower than the anisotropy field of the soft layer.     

Spatial‐skin effect for eigenvibrations of a thick cascade junction with ‘heavy’ concentrated masses

A spectral problem for the Laplace operator in a thick cascade junction with concentrated masses is considered. This cascade junction consists of the junction's body and a great number of ?‐alternating thin rods belonging to two classes. One class consists of rods of finite length, and the second one consists of rods of small length of order . The density of the junction is of order on the rods from the second class and outside of them. The asymptotic behavior of eigenvalues and eigenfunctions of this problem is studied as ? → 0. There exist five qualitatively different cases in the asymptotic behavior of eigenmagnitudes as ? → 0, namely the case of ‘light’ concentrated (α ∈ (0,1)), ‘middle’ concentrated (α = 1), and ‘heavy’ concentrated masses (α ∈ (1, + ∞ )) that we divide into ‘slightly heavy’ concentrated (α ∈ (1,2)), ‘intermediate heavy’ concentrated (α = 2), and ‘very heavy’ concentrated masses (α > 2). In the paper, we study in detail the influence of the concentrated masses on the asymptotic behavior if α ∈ (1,2). We construct the leading terms of asymptotic expansions both for the eigenvalues and eigenfunctions and prove the corresponding asymptotic estimates. Copyright © 2013 John Wiley & Sons, Ltd.     

Directed transport and complex dynamics of vortices in a Josephson junction network driven by modulated currents

Directed transport of vortices in a Josephson junction network (JJN) with structural disorder is studied using a numerical simulation. Using spatiotemporal modulation of driving currents, the directed transport of vortices occurs even in the presence of disorder under certain conditions. From the analyses of the current–voltage and local voltage characteristics, it is found that the collective motion of vortices has an importance for the occurrence of directed transport.     

Electrochemical etching of silicon carbide

Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching of the p-type epilayer could be achieved. For a planar 6H-4H polytype junction (n-type, both polytypes with equal doping concentrations) the 4H region was selectively etched under UV illumination. Thus polytype junctions could be marked by electrochemical etching. With HCl instead of HF no etching of SiC occurs, but a SiO₂ layer (thickness up to 8 μm) is formed by anodic oxidation. Received: 29 October 1998 / Accepted: 27 January 1999     

Particle detection properties of charge coupled devices

A detailed quantitative analysis of particle events observed in Charge Coupled Devices (CCDs) requires the knowledge of particle detection properties of the employed CCDs such as the detection threshold for energy deposition, efficiency for different kinds of radiation and the relation between the signal and the deposited energy inside the sensitive volume. For this purpose the CCD-chip was described by a simple geometrical model containing the effective thicknesses of the p-n semiconductor junctions dj and a covering dead layer d_T above them as parameters. The corresponding geometrical quantities were experimentally estimated to be 1.3 μm and 0.9 μm respectively by using different kinds of radiation.     

增强金属-氧化物-金属隧道结的光发射

本文报道通过改进制作工艺将A1-A12O3-Au隧道结的耐压增加到5.3V,发光外量子效率增加到8.2×10-4,均高过迄今见到的关于该类结的最高耐压和最高效率的报道。我们观测到了该发光结上的Au膜厚度对发射光谱形状的影响,并对此作出了解释;还对该光谱中的截止频率和峰值的存在给出了理论解释。     

Exponentially Tapered Josephson Junction: Some Analytic Results

We investigate the dynamical properties of an exponentially tapered Josephson junction using a simple one-dimensional model described by a perturbed (nearly integrable) sine-Gordon equation. An approximate analytic solution is based on the linearization about a rapidly oscillating background. We compare the analytic results with direct numerical simulations for the magnetic field patterns in the junction. __________ Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 144, No. 2, pp. 348–353, August, 2005