一类非线性四阶波动方程初边值问题解的有限时间爆破

研究四阶带有阻尼项的非线性波动方程的解的初边值问题,利用位势井方法,证明了当初值满足一定条件时解发生爆破.将有关该系统爆破性质的研究结果一般化,通过证明得到了该系统较好的性质.     

Investigating the generation of ferrous sulfide nanoparticles in the produced fluid after acidizing oil wells and its influence on emulsifying stability between oil and water

Studies show that after acidizing operation of oil wells using the alkali/surfactant/polymer (ASP) flooding technology, the produced fluid is emulsified. Since the produced emulsion is stable, it affects the oil–water separation performance. In order to analyze the generation of stable emulsion in the produced fluid after acidizing an oil well, innovative separation experiments were carried out on real oil wells. During the experiments, solid particles in the middle layer of the emulsifying system in the produced fluid after acidizing ASP flooding were extracted and characterized. The generation of the stable emulsifying system in the produced fluid was studied through stability experiments and molecular dynamics simulations. The results showed that the synergistic effect of ferrous sulfide nanoparticles and surfactants was the fundamental reason for the strong emulsifying stability of the produced liquid after acidizing of the ternary composite system. The generation of ferrous sulfide solid particles mainly included two steps. First, sulfate reducing bacteria in injected water by ASP flooding reacted with sulfate in formation water to form hydrogen sulfide. Then, the hydrogen sulfide reacted with iron metal in oil wells and casing of wellbore to form ferrous sulfide particles. It was found that surfactants are adsorbed on the surface of ferrous sulfide nanoparticles. Subsequently, the control ability of surfactant on oil and water phases in the liquid film was enhanced. The performed analyses demonstrate that the adsorption of solid particles to the oil phase was enhanced, while the free motion of molecules in the oil phase at the liquid film position was weakened. The strength of the interfacial film between oil and water was further increased by the synergistic effect of ferrous sulfide nanoparticles and surfactant. The present study is expected to provide a guideline for a better understanding of the efficient treatment of produced fluids in ASP flooding.     

First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices

Using two versions of the first principles full potential linear muffin-tin orbitals method (FPLMTO) which enable an accurate treatment of the interstitial regions, the electronic and optical properties of (110) growth axis Si/SiGe superlattices are investigated. A comparative study with (001) growth axis superlattices is made. In particular, it is found that the bottom of the conduction band (CB) is closer to Γ$\Gamma$ in the (110) system but the optical activity is not enhanced. Furthermore, the absorption spectra of the superlattices are calculated and are found to be quite different from those of bulk Si and Ge but fairly close to their average.     

An efficient splitting technique for two‐layer shallow‐water model

We consider the numerical approximation of the weak solutions of the two‐layer shallow‐water equations. The model under consideration is made of two usual one‐layer shallow‐water model coupled by nonconservative products. Because of the nonconservative products of the system, which couple both one‐layer shallow‐water subsystems, the usual numerical methods have to consider the full model. Of course, uncoupled numerical techniques, just involving finite volume schemes for the basic shallow‐water equations, are very attractive since they are very easy to implement and they are costless. Recently, a stable layer splitting technique was introduced [Bouchut and Morales de Luna, M2AN Math Model Numer Anal 42 (2008), 683–698]. In the same spirit, we exhibit new splitting technique, which is proved to be well balanced and non‐negative preserving. The main benefit issuing from the here derived uncoupled method is the ability to correctly approximate the solution of very severe benchmarks. © 2014 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 31: 1396–1423, 2015     

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron–impurity binding energy in GaN/HfO₂ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron–impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron–impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO₂ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.     

MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性

研究了用金属有机物气相外延(MOVPE)法在蓝宝石衬底上生长的In组分浓度保持不变的InGaN/GaN单量子阱结构在室温下的发光特性和光吸收特性.实验结果表明,在InGaN厚度<3nm时,随着样品InGaN势阱层宽度的增加(1nm),光致发光(PL)谱的发光峰值波长出现明显的红移33nm现象,而且发光强度下降8%,谱线半峰全宽(FWHM)展宽,通过对样品的透射、反射光谱研究发现,量子阱层窄(1.5nm)的样品在波长接近红外区时出现无吸收的现象,即R+T达到了100%,而在阱层较宽的样品中没有发现这一现象,对引起这些现象的原因进行了讨论.这些结果有助于开发和优化三族氮化物半导体光电器件的进一步研究工作.     

一维无限深势阱中粒子运动的路径积分解法

用路径积分的分析方法求得了一维无限深势阱中粒子的传播函数,并由传播函数导出了粒子的波函数和能量,展示了路径积分与传统方法的等价性,同时还介绍了一种有用的数学函数——雅可比θ_3函数．