Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

卧式螺旋管内油－气两相流流型的研究

本文在两种不同尺寸的卧式螺旋管内进行了油－气两相流流型的实验研究，得到了流型图，并对各种流型之间的转变机理进行了讨论和分析，同时给出了各流型之间转变的准则关系式。     

适用于量子阱激光器的速率方程

首次在理论上用量子阱激光器增益与载流子密度的对数关系替代了原有速率方程中的线性关系，得到了改进了速率方程，分析了稳态和调制特性，从理论上得到了获得最低阈值的最佳阱数和最大调制带宽的最佳腔长。     

高速CCTS光双稳激光器的研究

从速率方程出发对双区共腔（ｃｏｍｍｏｎ－ｃａｖｉｔｙｔｗｏｓｅｃｔｉｏｎ简称ＣＣＴＳ）光双稳激光器进行了精确的理论分析与计算，并对其稳态特性进行了实验研究和测试，得出了定量和定性的分析结果，同时还首次发现当激光输出高态出又出现了一次光双稳和开关效应。经研究确认是量子阱探测器的自电光效应，并提出一种可集成双逻辑功能显示的新型网络模型器件。     

基于量子阱结构的高效磷光有机电致发光器件

采用多重量子阱结构制作了高效红色磷光有机电致发光器件。以4,4'-bis(N-carbazolyl)-1,10-biphenyl (CBP)掺杂bis(1-phenyl-isoquinoline)(Acetylacetonato) iridium(Ⅲ) (Ir(piq)₂(acac))为发光层,4,4'-bis(N-carbazolyl)-1,10-biphenyl(Bphen)为电荷控制层,形成了Ⅱ型双量子阱结构,器件的最大亮度为15 000 cd/m²,最大电流效率为7.4 cd/A,相对于参考器件提高了21%。研究结果表明:以Bphen为电荷控制层形成的Ⅱ型多重量子阱结构能有效地将载流子和激子限制在势阱中,并且使空穴和电子的注入更加平衡,从而提高了载流子复合的几率和器件的效率。     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

气侵期间环空气液两相流动研究

本文建立了描述钻井气侵期间井眼气液两相流偏微分方程组,该方程组既考虑了不同渗透率的储层与储层钻开不同厚度下的气体侵入井眼情况,也给出了这种情况下该偏微分方程组的求解方法。利用实验数据进行了模拟,揭示了环空气液两相流型与流动参数变化特征,据此,能够为安全有效地井控提供理论基础。     

有机聚合物量子阱结构及其应用

讨论了有机聚合物量子阱结构的生长方法,特性及其在改善发光器件性能和发展电泵有机激光中的应用。     

电场对量子阱中自由载流子光辐射线宽的影响

本文对固体中在较大空间范围运动的粒子采用轨道、动量及波包来描述。根据量子力学测不准关系, 粒子的能量测不准公式被导出。公式表明, 电场强烈地散射载流子, 使载流子所处能级大为展宽。应用该公式到Ｐ－Ｉ－Ｎ结构的ＧａＡｓ／ＧａＡｌＡｓ 多量子阱中, 理论计算的光辐射线宽与光致荧光实验测得的线宽吻合。     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.