Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density.     

低能离子束诱导Ag表面纳米金字塔微结构

利用离子束溅射诱导实验方法,在单晶Si(100)基底上辅助沉积银膜,研究了低能Ar+离子束30°入射时,不同离子束能量和束流密度以及基底温度对Ag纳米结构的影响.结果表明:在较低基底温度下(32~100℃)辅助沉积银膜,膜层表面会呈现排列紧密、晶粒尺寸一致的金字塔状纳米结构.当温度升高时(32~200℃),纳米微结构横向尺寸λc迅速增加,而粗糙度先减小(32~100℃)后迅速增大(100~200℃);当离子束能量1 400eV、束流密度15~45μA/cm2时,在相同温度下,随着离子束束流密度的增大,纳米晶粒横向尺寸基本不变,粗糙度略有增加;当离子束流密度为15μA/cm2、能量1 000~1 800eV时,在相同温度下,随着离子束能量的增加,银纳米结构尺寸增加,而表面粗糙度先增加,然后缓慢减小.自组织纳米结构的转变是溅射粗糙化和表面驰豫机制相互作用的结果.     

利用边缘相位校正实现光束整形的高精度优化

提出利用边缘相位校正的新方法,校正用追迹法设计的产生环形光束的衍射光学元件的相位分布,从而实现光束整形中的高精度优化。通过将高斯光束整形为环形光束,将该方法、G-S(Gerchberg-Saxton)算法和改进的G-S算法设计得到的整形结果作了比较,结果表明,G-S算法的整形结果虽然衍射效率最大,但是均方根值和最大偏差也太大;改进的G-S算法可以有效的降低均方根值和最大偏差,但衍射效率也有较大的下降;而用边缘相位校正可以在衍射效率略微下降的情况下,更大的降低均方根值和最大偏差,其整形结果是综合了衍射效率、均方根值和最大偏差这三个评价指标以后得到的最优化结果,已接近理想的环形光束。     

速调管离子噪声特性的模拟分析

 离子噪声已成为影响现代微波管性能的一个重要因素，采用一维混合模型研究了速调管的离子噪声，用自编的1维粒子模拟程序对速调管的离子噪声特性进行了分析。采用小信号近似，从理论上推导出了速调管离子噪声与相位畸变关系的表达式，表明微波管相位噪声直接来源于管内离子量的变化。模拟了有离子噪声时速调管的相位特性，对模拟过程做了离子诊断并与实验结果进行比较，证明了模拟过程的正确性。探讨了电子束电流、电压以及聚焦磁场对离子噪声的影响规律，束电流与束电压改变后，离子噪声的周期与大小相应改变，增大束电流，离子噪声幅度会下降，并趋于稳定，而在束电流不变的情况下，离子噪声存在一个最小值。束电流与束电压确定，存在最佳的磁场使离子噪声幅度最小。     

高功率980nm垂直腔面发射激光器的亮度特性

在循环水冷却(工作环境温度控制在15℃)和连续注入电流条件下,从垂直腔面发射激光器(VCSEL)亮度基本定义出发,实验测量了不同注入电流时口径为400μm的高功率980nm InGaAs/GaAs应变量子阱垂直腔面发射激光器(VCSEL)的亮度特性。结果表明:在注入电流4 A时,随着注入电流的增加,亮度也跟着增加;当注入电流4A时,尽管输出功率在增加,但是器件的光束质量变差,M2因子升高,表明此时影响器件亮度的主导因素是M2因子,所以亮度减小;在注入电流为4A,输出功率为1.2W时,亮度达到最大值2.43kW/cm2.sr,此时的光束质量最好,M2因子为207。最后,分析了影响高功率VCSEL器件亮度特性的主要因素,提出了提高器件亮度特性的解决方法。     

基于平底孔反射体的双晶直探头测量模型

双晶探头在无损检测领域有着重要的应用,因而有必要建立一个超声测量模型来深入了解这类换能器的特点.通过将一个基于传递矩阵的多高斯声束模型和一个基尔霍夫近似方法获得的散射模型有效结合,建立了一个完整的纵波双晶直探头测量模型,用于预测平底孔缺陷体的回波信号.对比分析了平底孔反射回波信号的模型计算结果与实验测量结果,验证了该测量模型的准确性. 关键词： 超声测量模型 双晶直探头 多高斯声束模型     

湍流大气中高斯光束焦移的数值模拟研究

采用数值模拟方法对聚焦高斯光束在湍流大气中传输的焦移进行了研究.结果表明:湍流大气中高斯光束的焦点不再位于真空焦点位置,而是向发射点移动,且前移的幅度随湍流强度的增大而增大,这与理论预计结果一致.引用焦深概念描述光束在焦点附近的准直特性,结果显示:在弱起伏和中等强度起伏情况下,光束的焦深随着湍流强度的增大而增大,焦点附近光束准直度提高;在中等和强起伏情况下,光束在焦点附近高度准直.     

Spectral behavior of pulsed Bessel beams focused by a dispersive lens

Starting from the Huygens–Fresnel diffraction integral, the analytical expression for the power spectrum of pulsed Bessel beams focused by a dispersive aperture lens is derived and used to study the spectral anomalies of pulsed Bessel beams in the focused field. Numerical calculation results are given to illustrate the dependence of spectral anomalous behavior on the pulse parameters, truncation parameter and material dispersion of the lens. It is shown that near the phase singularities the spectral anomalies may take place. The potential applications of spectral anomalies of ultrashort pulsed beams in information encoding and information transmission are considered.     

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 × 10⁻¹⁷ J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power.     

Effect of external magnetic field on critical current for the onset of virtual cathode oscillations in relativistic electron beams

In this Letter we research the space charge limiting current value at which the oscillating virtual cathode is formed in the relativistic electron beam as a function of the external magnetic field guiding the beam electrons. It is shown that the space charge limiting (critical) current decreases with growth of the external magnetic field, and that there is an optimal induction value of the magnetic field at which the critical current for the onset of virtual cathode oscillations in the electron beam is minimum. For the strong external magnetic field the space charge limiting current corresponds to the analytical relation derived under the assumption that the motion of the electron beam is one-dimensional [D.J. Sullivan, J.E. Walsh, E. Coutsias, in: V.L. Granatstein, I. Alexeff (Eds.), Virtual Cathode Oscillator (Vircator) Theory, in: High Power Microwave Sources, vol. 13, Artech House Microwave Library, 1987, Chapter 13]. Such behavior is explained by the characteristic features of the dynamics of electron space charge in the longitudinal and radial directions in the drift space at the different external magnetic fields.