第一性原理研究Be-S共掺杂AlN纳米片的电子结构和光学性质

基于密度泛函理论体系下广义梯度近似(GGA),利用第一性原理方法计算了Be替代Al、S替代N和Be-S共掺杂对氮化铝纳米片的电子结构和光学性质的影响.计算结果表明,掺杂改变了氮化铝纳米片的带隙,但仍显示半导体特性. Be掺杂类型对氮化铝纳米片的晶体结构影响不大,而S掺杂和Be-S共掺杂都使得氮化铝纳米片有不同程度的弯曲.同时Be-S共掺杂中S原子起到激活受主杂质Be原子的作用,使得受主能级向低能方向移动.共掺杂比单掺杂具有更高的受主原子浓度,并减小局域化程度.光学性质也发生较大改变:S原子掺杂氮化铝纳米片的介电函数虚部出现第二介电峰,Be掺杂和Be-S共掺杂使得损失谱的能量区间有所展宽,峰值降低并向高能区移动.     

W掺杂ZnO电子结构与光学性质第一性原理计算

采用了基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算本征ZnO和不同W掺杂浓度下W:ZnO体系的电子结构和光学性质.计算结果表明:W掺杂可以提高ZnO的载流子浓度,从而改善ZnO的导电性.掺杂后,吸收光谱发生红移现象,且光学性质变化集中在低能量区,而高能量区的光学性质没有太大变化,计算结果与相关实验结果相符合.最后,结合电子结构定性分析了光学性质的变化.     

第一性原理研究[112]硅锗异质结纳米线的电子结构与光学性质

基于密度泛函理论体系下的广义梯度近似,本文利用第一性原理方法着重研究了[112]晶向硅锗异质结纳米线的电子结构与光学性质.能带结构计算表明:随着锗原子数的增加,[112]晶向硅锗纳米线的带隙逐渐减小;对Si_(36)Ge_(24)H_(32)纳米线施加单轴应变,其能量带隙随拉应变的增加而单调减小.光学性质计算则表明:随着锗原子数的增加,[112]硅锗纳米线介电函数的峰位和吸收谱的吸收边均向低能量区移动;而随着拉应变的增大,吸收系数峰值呈现出逐渐减小的趋势,且峰位不断向低能量区移动,上述结果说明锗原子数的增加与施加拉应变均导致[112]硅锗纳米线的吸收谱产生红移.本文的研究为硅锗异质结纳米线光电器件研究与设计提供一定的理论参考.     

Enhanced robustness of zero-line modes in graphene via magnetic field

We systematically studied the influence of magnetic field on zero-line modes (ZLMs) in graphene and demonstrated the physical origin of their enhanced robustness by employing nonequilibrium Green’s functions and the Landauer–Büttiker formula. We found that a perpendicular magnetic field can separate the wavefunctions of the counter-propagating kink states into opposite directions. Specifically, the separation vanishes at the charge neutrality point and increases as the Fermi level deviates from the charge neutrality point and can reach a magnitude comparable to the wavefunction spread at a moderate field strength. Such spatial separation of oppositely propagating ZLMs effectively suppresses backscattering and is more significant under zigzag boundary condition than under armchair boundary condition. Moreover, the presence of magnetic field enlarges the bulk gap and suppresses the bound states, thereby further reducing the scattering. These mechanisms effectively increase the mean free paths of the ZLMs to approximately 1 μm in the presence of a disorder.     

RCOO-取代的镍(Ⅱ)配合物单组分高效催化乙烯均聚和共聚反应

合成并表征了含RCOO-基团的单核(Ni¹~Ni²)及双核(Ni³)镍配合物[(2,6-R₂-C₆H₃)—N=C(H)—(3-Ph-5-PhCOO-2-O-C₆H₂)-κ²-N,O]Ni(CH₃)(pyridine)](R=iPr;3,5-tBu₂C₆H₃),并用于催化乙烯均聚和共聚反应。 作为单组分催化剂,这些配合物可以有效地催化乙烯聚合得到中等相对分子质量的支化聚乙烯(PE)。 供电性的PhCOO—基团促进了催化剂Ni¹的引发,从而在低温下比Ni⁰活性更高。 引入大位阻的2,6-(3,5-二叔丁基苯基)苯胺基团,催化剂Ni²在5×10⁵ Pa下的活性高达1.8×10⁶ g PE mol^-1·Ni^-1·h^-1,是活性最高的水杨醛亚胺中性镍催化剂之一。 与相应的单核催化剂相比,双核催化剂Ni³对三苯基膦具有更好的耐受性。 这些催化剂可催化乙烯与1,5-己二烯、1,7-辛二烯、6-溴-1-己烯或10-十一烯酸甲酯的共聚合,制备功能化聚乙烯。     

原子级壳层厚度Ru@Pt核壳结构纳米粒子的制备与表征

采用连续多元醇法,以RuCl₃·xH₂O和PtCl₂为前驱体,乙二醇为还原剂,聚乙烯吡咯烷酮为稳定剂的反应体系,并通过调节PtCl₂用量和还原温度成功制备了壳层厚度约为1.5个Pt原子层的单分散Ru@Pt核壳结构纳米粒子,利用透射电子显微镜(TEM)、X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)等分析方法对其微观结构、粒径分布、晶型结构、物相组成进行了表征。 结果表明,该纳米粒子分布均匀且基本为球形,平均粒径约为3.57 nm,其中内核直径约为2.49 nm,外壳厚度约为0.55 nm,壳层金属Pt具有很好的晶型,Pt原子主要为{111}晶面,内核金属Ru与外壳金属Pt互相产生了电子效应使Pt的衍射峰和Ru、Pt的电子结合能产生了一定偏移,并初步研究了有效控制该核壳结构纳米粒子壳层厚度和增强核与壳两种金属之间电子效应的因素,使其有望在催化等领域发挥潜在的应用价值。     

Magnetically Controlled Electronic Transport Properties of a Ferromagnetic Junction on the Surface of a Topological Insulator

We have investigated the transport properties of the Dirac fermions through a ferromagnetic barrier junction on the surface of a strong topological insulator.The current-voltage characteristic curve and the tunneling conductance are calculated theoretically.Two interesting transport features are predicted:observable negative differential conductances and linear conductances tunable from unit to nearly zero.These features can be magnetically manipulated simply by changing the spacial orientation of the magnetization.Our results may contribute to the development of high-speed switching and functional applications or electrically controlled magnetization switching.     

First-principles investigation of structural,mechanical, electronic,and bonding properties of NaZnSb

The structural, mechanical, electronic, and bonding properties and phase transition of NaZnSb are explored using the generalized gradient approximation based on ab initio plane-wave pseudopotential density functional theory. With the help of the quasi-harmonic Debye model, we probe the Grüneisen parameter, thermal expansivity, heat capacity, Debye temperature, and entropy of NaZnSb in the tetragonal phase. The results indicate that the lattice constants and the bulk modulus and its first pressure derivative agree well with the available theoretical and experimental data. NaZnSb in its ground state structure exhibits a distinct energy gap of about 0.41 eV, which increases with increasing pressure. Our conclusions are consistent with the theoretical predictions obtained by the ABINIT package, but are different from those obtained through the tight-binding linear muffin-tin orbital method. As a result, further experimental and theoretical researches need to be carried out. For the purpose of providing a comparative and complementary study for future research, we first investigate the thermodynamic properties of NaZnSb.     

Vibrational assignments and electronic structure calculations for 6‐thioguanine

The Fourier transform Raman and Fourier transform infrared (FT‐IR) spectra of thioguanine have been recorded. Ab initio and density functional computations of the vibrational (IR) spectrum, the molecular geometry, Highest Occupied Molecular Orbital (HOMO)–Lowest Unoccupied Molecular Orbital (LUMO) energy gaps and polarizabilities were studied. On the basis of the comparison between calculated and experimental results and the comparison with related molecules, assignments of fundamental vibrational modes are examined. The observed and simulated spectra were found to be well comparable. The electronic transition energies and intensities of spectral lines were carried out using TDDFT and ZINDO methods. Copyright © 2009 John Wiley & Sons, Ltd.     

第一性原理比较研究MnPm(M=Al,Ga,In,2≤n+m≤3)团簇

利用密度泛函理论对MnPm (M=Al,Ga,and In,2≤n+m≤3)团簇的几何和电子结构性质及稳定性进行了研究.结果表明,三原子的MnPm团簇是二重态,而单体则是三重态.富P的MP2团簇是具有C2V对称性的等腰三角形结构,而富M的M2P团簇则是具有Cs对称性的三角形结构.在三原子磷化物团簇中,MP2团簇比M2P团簇稳定,而后者中M-P键的强度比前者强.对于这些小的磷化物团簇,电离势高于裂解能,表明裂解比电离占优势.Ga2P比Al2P和In2P的HOMO-LUMO能隙和电离势都高,归咎于在富金属的M2P团簇中,相对较强的Ga-P键.