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31.
A novel and direct method for the synthesis of α-halocarbonyl compounds using sequential treatment of carbonyl compounds with [hydroxy(tosyloxy)iodo]benzene followed by magnesium halides under solvent-free microwave irradiation conditions is described.  相似文献   
32.
The stress-strain state in the zone of load transfer in a uniaxially stretched specimen made of a unidirectional epoxy carbon-fiber-reinforced plastic (CFRP) is investigated. A parametric analysis of the influence of geometric and mechanical characteristics of the specimen on its stress-strain state is performed by means of finite-element modeling. The parameters allowing us to significantly reduce the dangerous concentration of transverse and tangential stresses are revealed. The mechanical tensile characteristics of a high-strength pultruded unidirectional CFRP are determined experimentally, and the size effect of its strength is estimated.  相似文献   
33.
The occurrence of time-dependent cavitation and tensile stress in an oscillatory oil squeeze film were investigated experimentally. The test apparatus was a simple thrust bearing consisting of two parallel circular plates separated by a thin viscous oil film. During the test, one plate was at rest while the other (transparent) oscillated in a direction normal to its surface. This test configuration was chosen to avoid the rotational motion and complicated geometry of a squeeze film journal bearing. The frequency of oscillation was in the range of 5 to 50 Hz and was controlled by an electro-magnetic exciter. The process of cavity formation and its subsequent development was recorded by a high-speed video camera. Concomitant pressure in the oil film was measured both within and without the cavitation region. It was found that both tensile stress and cavities existed in a squeeze film under certain working conditions.  相似文献   
34.
浮栅ROM器件辐射效应机理分析   总被引:1,自引:0,他引:1       下载免费PDF全文
分析了浮栅ROM器件的辐射效应机理,合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和60Co γ辐射效应都是总剂量效应 . 关键词: FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">60Co γ 总剂量效应  相似文献   
35.
Accelerated phase transformations and chemical reactions of metastable aluminas and kaolinite, doped with Cu2 +, Mn3 +/Mn2 + and Fe3 +/Fe2 + ions, are accompanied with accelerated decrease of surface area and pore volume values. The phenomena in metal ion doped samples are explained by a catalytic mechanism, in terms of the Jahn-Teller effect. This revised version was published online in June 2006 with corrections to the Cover Date.  相似文献   
36.
Anti-BZ-Structure in Effect Algebras   总被引:1,自引:0,他引:1  
The definitions of sharply approximating effect algebras, anti-BZ-effect algebras, central approximating effect algebras, and S-anti-BZ-effect algebras are given, the relationships between sharply approximating effect algebras and anti-BZ-effect algebras, between central approximating effect algebras and anti-BZ-effect algebras are established, and the set of anti-BZ-sharp elements in S-anti-BZ-effect algebras is proved to be an orthomodular lattice.  相似文献   
37.
介绍了可以用作物理奥林匹克实验培训的电学黑盒子实验的设计思想、实验内容和相应的参考答案 ,并对用该试题在中国物理奥林匹克集训队考试的结果进行了分析 .  相似文献   
38.
We carried out detailed calculations for photorefractive wave-mixing switches based on one of three crystals with high electro-optic coefficients, namely, BaTiO3, Strontium Barium Niobate (SBN (0.75)), and Potasium Sodium Strontium Barium Niobate (KNSBN). A comparison of results for the three crystals shows that a 0_-cut BaTiO3 crystal is suitable for a longitudinal switch and requires a voltage of about 80 for a 2-mm-thick crystal to induce sufficient phase mismatch. The electrodes must be transparent for the incident and diffracted beams. A 45_-cut SBN (0.75) crystal, however, is suitable for a lateral switch and requires a voltage of about 150 for a 1-mm-wide crystal. The electrodes do not need to be transparent.  相似文献   
39.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR.  相似文献   
40.
We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to manipulate and detect dynamic processes of spin/magnetic order in a ferromagnetic semiconductor InMnAs. We observed ultrafast photo-induced “softening” (i.e., transient decrease of coercivity) due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (2 ps) and returns to its original value as soon as the carriers recombine to disappear. Our data clearly demonstrates that magnetic properties, e.g., coercivity, can be strongly and reversibly modified in an ultrafast manner. We attribute the origin of this unusual phenomenon to carrier-mediated ferromagnetic exchange interactions between Mn ions. We discuss the dependence of data on the pump polarization, pump intensity, and sample temperature. Our observation opens up new possibilities for ultrafast optical manipulation of ferromagnetic order as well as providing a new avenue for studying the dynamics of long-range collective order in strongly correlated many-body systems.  相似文献   
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