On the inclusion of collisional correlations in quantum dynamics

We present a formalism to describe collisional correlations responsible for thermalization effects in finite quantum systems. The approach consists in a stochastic extension of time dependent mean field theory. Correlations are treated in time dependent perturbation theory and loss of coherence is assumed at some time intervals allowing a stochastic reduction of the correlated dynamics in terms of a stochastic ensemble of time dependent mean-fields. This theory was formulated long ago in terms of density matrices but never applied in practical cases because of its complexity. We propose here a reformulation of the theory in terms of wave functions and use a simplified 1D model of cluster and molecules allowing to test the theory in a schematic but realistic manner. We illustrate the performance in terms of several observables, in particular global moments of the density matrix and single particle entropy built on occupation numbers. The occupation numbers remain fixed in time dependent mean-field propagation and change when evaluating the correlations, then taking fractional values. They converge asymptotically towards Fermi distributions which is a clear indication of thermalization.     

劈裂纳米环多极表面等离激元共振及折射率传感特性分析

研究了在三开口劈裂金属纳米环中,当入射场偏振方向不同时出现的多极局域表面等离激元共振现象及折射率传感特性。研究表明,当入射场偏振方向分别沿x 轴和y 轴时,在可见光-近红外区域分别激发起两个和三个明显的共振峰。通过改变缺口的张角,能够实现对共振峰位和强度的可控调整。共振峰位处劈裂纳米环的近场分布表明,LHA(左半弧)和DRHA(双右半弧)之间等离激元的杂化耦合是形成上述共振的原因。劈裂纳米环的多极共振非常适合折射率传感应用。当改变周围环境折射率,入射场沿x 轴偏振时,折射率敏感度的最大值可达到1365nm/RIU;入射场沿y 轴偏振时,折射率敏感度最大值可达2229nm/RIU。     

TOT measurement implemented in FPGA TDC

Time measurement plays a crucial role for the purpose of particle identification in high energy physics experiments. With increasingly demanding physics goals and the development of electronics, modern time measurement systems need to meet the requirement of excellent resolution specification as well as high integrity. Based on Field Programmable Gate Arrays(FPGAs), FPGA time-to-digital converters(TDCs) have become one of the most mature and prominent time measurement methods in recent years. For correcting the time-walk effect caused by leading timing, a time-over-threshold(TOT) measurement should be added to the FPGA TDC. TOT can be obtained by measuring the interval between the signal leading and trailing edges. Unfortunately, a traditional TDC can recognize only one kind of signal edge, the leading or the trailing. Generally, to measure the interval, two TDC channels need to be used at the same time, one for leading, the other for trailing. However, this method unavoidably increases the amount of FPGA resources used and reduces the TDC's integrity.This paper presents one method of TOT measurement implemented in a Xilinx Virtex-5 FPGA. In this method,TOT measurement can be achieved using only one TDC input channel. The consumed resources and time resolution can both be guaranteed. Testing shows that this TDC can achieve resolution better than 15 ps for leading edge measurement and 37 ps for TOT measurement. Furthermore, the TDC measurement dead time is about two clock cycles, which makes it good for applications with higher physics event rates.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

双能级系统中的光场驱动吸收特性和粒子布居调控

摘要：原子系统中的相干效应一直是当前科学研究的热点。本文在典型的双能级系统中引入光场激发能级之间粒子的相干跃迁,通过讨论光场开启后直到系统达到稳定的量子相干过程,分析系统从瞬态到达稳态的吸收特性和粒子布居特性,并进一步讨论通过改变光场强度对其特性进行的调控。     

轴对称非静态电荷电流分布轴外场的交替迭代

在轴对称非静态电荷电流分布的情况下,利用麦克斯韦方程组和轴对称性,给出了计算轴外电磁场的交替迭代法.     

手机锂电池充放电过程的研究

利用COBRA3实验设备测试了锂电池待机充放电过程的电压、电流、锂电池电容量及充电量的变化情况。提出通过实时测量锂电池电压值,可精确换算出锂电池的剩余容量的方法。手机待机充电所需时间和关机充电所需时间基本一致。     

椭圆形和圆形翅片管流动与传热的数值研究

对椭圆管椭圆翅片间的流动与传热规律进行了三维数值研究,分析了不同翅片间距、迎面风速对表面换热系数和流动阻力的影响;与具有相同结构参数(相同的基管当量直径和翅片厚度、表面积)的圆管圆翅片进行比较表明,在相同条件下,两者的表面换热系数相差不大,但椭圆管椭圆翅片间流动阻力却有明显的减小.场协同分析表明,翅片迎风侧的换热要优于背风侧;通过适当增加迎风侧翅片面积,减小背风侧翅片面积,可以在强化换热的同时,减小流动阻力.     

Intermediate layer thickness dependence on switching field distribution in perpendicular recording media

The effect of intermediate layer (IL) thickness on crystallographic texture and magnetic properties of CoCrPtSiO₂ granular perpendicular recording media was investigated with switching field distribution (SFD) as the focus. Even though the c-axis orientation of the Co-based recording layer (RL) broadens with the reduction of IL thickness, the SFD becomes narrower. This result demonstrates that the intrinsic SFD is not directly dependent on c-axis orientation of the recording layer but instead dependent on the magnitude of exchange coupling. It is thus possible to have a medium with thin IL and narrow SFD. This is desirable for bit-patterned media (BPM), where highly exchange-coupled grains are required.     

膜蒸馏装置热容腔流场数值模拟的可行性分析

本文运用CFD软件,采用水作为工质,在第Ⅲ代膜组件基础上,对旋转切向入流空气隙膜蒸馏热容腔内的流场进行了模拟计算,通过数值模拟结果与实验数据的比较分析,验证了针对膜组件热容腔进行理论模拟所设置的物理模型和边界条件是符合实际的,理论模拟值和实验值的误差在20%范围内,其结果较为理想.