Double Electric Layer on Liquid Sn-Ga Alloy in Acetonitrile Solutions of Electrolytes

The structure of the double electric layer (DEL) on a liquid dropping Sn-Ga electrode containing 8 at. % of Sn is studied in acetonitrile (AN) solutions of electrolytes. It is shown that the transition from aqueous to AN solutions of electrolytes makes it possible to expand the region of investigation of parameters of DEL on an Sn-Ga electrode from negative charges to a zero charge and to small positive charges. As follows from the obtained data, throughout the entire interval of charges studied, an excess, as compared with an Hg electrode, chemisorption interaction (Sn-Ga)-AN is absent. It is established that the distance of the closest approach of AN dipoles to an ionic core increases upon going from Hg to Sn-Ga to Ga. The Ga, Bi-Ga, and Sn-Ga electrodes, which possess close values of the “electrochemical work function,” are used as an example to show that the metal-solvent chemisorption interaction increases with decreasing distance of the closest approach of its dipoles to the ionic core of the metal. The effect of this factor becomes stronger as the donor number of the solvent increases.     

Thermal properties of rare earth dodecaborides

We have measured heat capacity and thermal expansion of rare earth dodecaborides REB₁₂ (RE=Y, Tb-Tm, Lu). YB₁₂ and LuB₁₂ are diamagnetics whereas the other dodecaborides are ordered antiferromagnetically. The amplitude of the heat capacity discontinuity at the Néel temperature and the shape of the heat capacity variation in the critical region for all these antiferromagnetics are characteristics for amplitude-modulated magnetic structures. In the ordered state TbB₁₂ reveals two first-order phase transitions, most likely due to magnetic structure changes. The heat capacity of ErB₁₂ just below the Néel point shows an anomaly of unclear origin. From the Schottky contribution to the heat capacity we have determined crystal field parameters. They are completely different than that is estimated from Point Charge Model.     

不同条件对硫酸钙结晶影响的实验研究

近年来由于微波化学的快速发展使人们认识到微波作为一种手段对化学反应的过程有着深刻的影响,在材料领域更是得到了日益广泛的应用,因此把微波应用于结晶过程也成为人们关注的热点。早在1966年磁场就被应用于晶体的生长。近年来,已有很多文献报道电场、磁场对晶体生长的影响。     

Steep pulsed electric fields modulate cell apoptosis through the change of intracellular calcium concentration

A steep electric pulsed field with low intensity (150–250 V/cm) and relative long time (10 min) was applied to adherent liver cancer cell line SMMC-7721 and the liver cell line HL-7702. Results showed that the electric field with intensity of 200 and 250 V/cm could trigger cell apoptosis, whereas the SMMC-7721 cell was more sensitive to the electric stimulation than the HL-7702 cell. Laser Scanning Confocal Microscope (LSCM) was used to measuring the real-time change of cytosolic free Ca²⁺ concentration. When cells were exposed electric pulses with 100 V/cm intensity for 10 min, there was no significant change of intracellular calcium concentration. With the intensity increased to 200 and 250 V/cm, intracellular calcium concentration decreased significantly. Results demonstrated the relationship between the apoptosis and change of intracellular calcium concentration. And the steep electric pulsed field can be used to the cancer therapy.     

感生电场与动生电场的等效性探究

本文认为在感生电场的情况下,磁场的强弱变化可以引起磁场自身的横向运动,使得线圈中电子相对于磁场发生运动,从而等效为一个动生电场,受到洛伦兹力的作用.借助磁感线模拟磁场的运动方式,得到圆形回路中任意一点与磁场相对运动速度的表达式,进而推得该＂等效动生电场＂中的洛伦兹力.以螺线管为例,验证该方法可以解释感生电场所满足的规律.将感生电场与动生电场的产生原因统一为导体中电子与磁场的相对运动,相应电动势的非静电力统一为洛伦兹力.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.     

Electrical Impedance Spectroscopic Study of CNT/Ethylene-alt-CO/Propylene-alt-CO Polyketones Nanocomposite

Impedance spectroscopy was utilized to investigate the dielectric properties, ac conductivity and charge transport mechanisms in propylene-alt-CO/ethylene-alt-CO (EPEC) random terpolymer filled with multi-walled carbon nanotubes (MWCNT) as a function of nanofiller content, frequency, and temperature. Equivalent resistor-capacitor (RC) circuit models were proposed to describe the impedance characteristics of the unfilled terpolymer and the nanocomposite at different temperatures. For the nanocomposites, the ac conductivity tended to be frequency independent at low frequencies. At high frequencies, the ac conductivity increased with frequency. The dc conductivity (i.e., plateau of the ac conductivity at low frequencies) at room temperature increased from 10^?9 (Ω·m)^?1 for the unfilled polymer to l0^?3 (Ω·m)^?1 for the 6 wt% MWCNT/EPEC nanocomposite. At low temperatures, the equivalent RC model for EPEC-0 and EPEC-2 was found to consist of a parallel RC circuit. However, for 6 wt% MWCNT/EPEC nanocomposite, an RC model consisting of an R/constant phase element (CPE) circuit and a resistor in series was required to describe the impedance behavior of the nanocomposite.     

静电场中电场强度的数值意义

“近场强远场弱”是静电场的普遍特点,宏观带电体的静电场是点电荷电场叠加的结果.本文以静电场中两个实际的电场强度问题为例,用相对数值比较了电荷分布对电场强度的贡献,阐述电场强度“近场强远场弱”的数值意义.