A screw dislocation near a non-elliptical piezoelectric inhomogeneity with internal uniform electroelastic field

Conformal mapping and analytic continuation are employed to prove the existence of an internal uniform electroelastic field inside a non-elliptical piezoelectric inhomogeneity interacting with a screw dislocation. We focus specifically on the case when the piezoelectric matrix surrounding the inhomogeneity is subjected to uniform remote anti-plane mechanical and in-plane electrical loading and a constraint is imposed between the remote loading and the screw dislocation. The constraint can be expressed in a relatively simple decoupled form by utilizing orthogonality relationships between two corresponding eigenvectors. The internal uniform electroelastic field is found to be independent of the presence of the screw dislocation; moreover, it can be expressed in decoupled form.     

位错偶极子和Ⅲ型界面裂纹的干涉效应

研究了多晶体材料中螺型位错偶极子和界面裂纹的弹性干涉作用.利用复变函数方法,得到了该问题复势函数的封闭形式解答.求出了由位错偶极子诱导的应力场和裂纹尖端应力强度应子,分析了偶极子的方向,偶臂和位置以及材料失配对应力强度因子的影响.推导了作用在螺型位错偶极子中心的像力和力偶矩,并讨论了界面裂纹几何条件和不同材料特征组合对位错偶极子平衡位置的影响规律.结果表明,裂纹尖端的螺型位错偶极子对应力强度因子会产生强烈的屏蔽或反屏蔽效应.同时,界面裂纹对螺型位错偶极子在材料中运动有很强的扰动作用.     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

脆性断裂的微观机理和非平衡统计特性

Ⅰ.引言如何才能将断裂的微观机理与宏观特性结合起来,把断裂理论建立于微裂纹演化的微观动力学基础上,从而统一导出所有重要的宏观力学量并以某些更基本的物理量表示之?这是人们为实现材料的强度和韧性设计必需解决的一个重要理论课题。就脆性断裂来说,尽管现有几个主要代表性的理论如断裂力学理论、位错理论和统计理论都各取得一定成就,但就其理论框架来说,由于明显的局限性,却难以发展成可供指导设计的理论。因此,人们在探索微观与宏观相结合的断裂理论。最近的工作表明:从微裂纹演      

硅酸钇晶体的生长、腐蚀形貌和光谱性能研究

本文采用中频感应提拉法成功生长了未掺杂的Y2SiO5(YSO)晶体,经过定向、切割、抛光后得到样品.经过腐蚀后,利用大视场显微镜和扫描电镜在样品表面上观察到了菱形和四边形的位错蚀坑、小角晶界和包裹物等缺陷;测试了经过氢气、空气退火前后,辐照前后YSO晶体的透过谱,结果表明:YSO晶体的吸收边大约在202nm,氢气退火后在200～300nm波段透过率增加,空气退火后透过率显著降低;辐照后,氢气退火的样品在200～500nm波段透过率显著降低.     

DKDP晶体的柱面形貌与缺陷分析

采用原子力显微镜观测全方位生长的DKDP晶体的{100}面形貌,发现有螺旋位错,由此推断DKDP晶体{100}面以螺旋位错机制生长;利用同步辐射X射线白光形貌术观测了DKDP晶体缺陷,探讨了不同生长条件及生长阶段对晶体完整性的影响.     

刃型位错和圆弧形刚性线夹杂的干涉效应

位错和夹杂的干涉效应对于理解材料的强化和韧化机理具有十分重要的意义。文中研究了晶体材料中刃型位错和多条共圆弧刚性线夹杂的干涉作用。利用Riemann—Schwarz反照原理和复势函数的奇性主部分析技术，得到了问题的一般解答；对于只含一条刚性线夹杂的情况，给出了复势函数的封闭形式解。由Peach-Koehler公式求出了作用在刃型位错上的位错力，并讨论了圆弧形刚性线夹杂对位错力的影响规律，发现弧形刚性线对刃型位错有很强的排斥作用。本文解答不但可作为格林函数获得任意分布位错的相应解答，而且可以用于研究刚性线夹杂和任意形状裂纹的干涉效应问题。     

Experimental study about nano-deformation field near quasi-cleavage crack tip

Using the nano-moiré method, we measure the near tip nanoscopic deformation on the [111] plane of single crystal silicon with a loaded quasi-cleavage crack running in the [110] direction. The measured strain distribution ahead of the crack tip agrees with the linear elastic fracture mechanics prediction up to 10 nm from the crack tip. Dislocations of Peierls type are detected and they extend from the crack tip over a length of hundreds of Burgers vectors.     

A chronological test of ocean-bottom spreading in the North Atlantic

Fission-track and K-Ar dating of basaltic glass from the Mid-Atlantic Ridge gives results which are consistent with the proposal of ocean-floor spreading. Correlation exists between the magnetic anomaly patterns over the Crest Mountains at 45°N and the age of the outcropping basalts. The observed sequences of ages progressing outward from the Median Valley 11,000, 230,000, 310,000, 750.000, 8,000,000, and 16,000,000 years constitute strong, direct support for the idea of ocean-bottom spreading.     

Atomistic simulation of kink structure on edge dislocation in bcc iron

Based on the general theory of dislocation and kink, we have constructed the three kink models corresponding to the 1/2 （111）{011} and 1/2 （111）{112} edge dislocations （EDs） in bcc Fe using the molecular dynamics method. We found that the geometric structure of a kink depends on the type of ED and the structural energies of the atom sites in the dislocation core region, as well as the geometric symmetry of the dislocation core and the characteristic of the stacking sequence of atomic plane along the dislocation line. The formation energies and widths of the kinks on the 1/2 （111）{011} and 1/2 （111）{112} EDs are calculated, the formation energies are 0.05eV and 0.04eV, and widths are 6.02b and 6.51b, respectively （b is the magnitude of the Burgers vector）. The small formation energies indicate that the formation of kink in the edge dislocation is very easy in bcc Fe.