基于多尺度分析的FCC金属应变率敏感性研究

 采用位错理论和分子动力学模拟研究了金属原子性质对其宏观应变率敏感性的影响。依据位错运动的Orowan关系,认为金属中位错速度对应力的依赖关系是此研究的关键,并分析提出研究金属原子性质与应变率敏感性关系的分析方法。构建了一个中等规模的二维分子动力学模型,应用此模型对单个位错在FCC金属中的运动进行模拟。综合位错理论分析和分子动力学模拟结果得出结论：影响金属应变率敏感性的原子性质是其原子量而不是其原子势。依据此结论分析得到的FCC金属应变率敏感性排序与试验结果相符。     

逆冲断层地震主震的突变理论分析

逆冲断层系统作准静态形变时的功、能量增量关系可以分解为关于体积应变能的功能增量关系和关于偏应力能的功能增量关系．采用突变理论方法对逆冲断层系统的偏应力功能量增量关系进行的分析表明:折迭突变模型展示的性状可对逆冲断层地震主震的发震条件、演化过程和若干震后特性作恰当描述．围岩的围压大,最大主应力大,逆冲潜断层面倾角小,围岩切向刚度与断层抗剪强度曲线软化段拐点处斜率的比值小, 则震时围岩弹性能释放量大、 震级高, 断层破裂半错距大, 围岩端面位移振幅也大．断层岩体破裂扩容和震时围岩体积应变能释放, 增强了前述效应．     

Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate

The threading dislocation (TD) density in GaN films grown directly on flat sapphire substrates is typically >10¹⁰/cm², which can deteriorate the properties of GaN-based LEDs significantly. This paper reports an approach to reducing the TD density in a GaN layer using a variety of patterned sapphire substrates (PSS). A cone-shaped PSS produced by metal organic chemical vapor deposition (MOVCD) was used for GaN deposition. Three types of GaN specimens were prepared at the initial nucleation stage, middle growth stage and final growth stage. The TDs generated on the cone-shaped PSS were analyzed by transmission electron microscopy (TEM) and a strain mapping simulation using HRTEM images, which evaluated the residual strain distribution. A large number of TDs were generated and the residual strain by the lattice distortions remained above the top of the cone-shaped regions. However, no TDs and residual strain were observed at the slope of the cone-shaped regions. This might be due to the formation of a GaN layer by lateral overgrowth at the slope of the cone-shaped regions, resulting in less lattice mismatch and incoherency between the GaN and sapphire. In conclusion, the TD density in the GaN layer could be reduced significantly, approximately 10⁷/cm², using the cone-shaped PSS.     

Elastic stress fields caused by a dislocation in Ge x Si1−x /Si film-substrate system

The elastic stress fields caused by a dislocation in Ge_xSi_(1-x) epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system,the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then,the unknown image dislocation densities are solved by using boundary conditions,i.e.,traction free conditions on the free surface. Numerical simulation focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness,position of the dislocation and crystallographic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress σxy,σyy,σyz on the interface are influenced by the layer thickness,but the former is stronger. In contrast to the weak dependence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.     

Torsion and noninertial effects on a nonrelativistic Dirac particle

We investigate torsion and noninertial effects on a spin-1/2$1/2$ quantum particle in the nonrelativistic limit of the Dirac equation. We consider the cosmic dislocation spacetime as a background and show that a rotating system of reference can be used out to distances which depend on the parameter related to the torsion of the defect. Therefore, we analyse torsion effects on the spectrum of energy of a nonrelativistic Dirac particle confined to a hard-wall potential in a Fermi–Walker reference frame.     

纳米孪晶界对可动位错演化特性与金属Al强化机理探究

位错是金属塑性变形普遍形式,对其可动位错演化特性与规律探寻并充分利用,将在金属强韧化提升中有着潜在基础前瞻性研究价值.本文基于分子动力学法对金属Al塑性变形的可动位错迁演特性展开研究,洞悉纳米压痕诱导的可动位错与孪晶界面间作用规律,揭示出金属强化微观机制,并分析单层孪晶界高度与多层孪晶界层间距对可动位错迁演、位错密度、硬度、黏着效应的影响.研究发现:高速变形下的金属非晶产生和密排六方结构的出现会协同主导Al基塑性变形,而孪晶界会阻碍可动位错滑移、诱导可动位错缠绕及交滑移产生,在金属承载提升中扮演了位错墙和诱导位错胞形成的微观作用.通过在孪晶界形成钉扎位错和限制位错迁移,在受限域形成高密度局域可动位错,显著强化了金属硬度和韧性,降低了卸载时黏附于探针表面的原子数.结果表明:Al基受载会诱导上表面局部非接触区原子失配斑出现;单层孪晶界高度离基底上表面距离减小时,位错缠绕和交滑移作用越明显,抗黏着效应也随之下降;载荷持续增加会诱驱孪晶界成为位错萌生处与发射源,并伴随塑性环的繁衍增殖.     

Theoretical study on the dislocations in the bubble rafts

The core structure of the dislocation in a bubble raft has been evaluated by using the improved P–N equation. The dislocation profile has been obtained explicitly for the bubble radius R=0.296, 0.592, 0.650, 0.888 mm. The results show that the core width of dislocation will increase rapidly when the bubble radius decreases, especially, this trend will become more significant as the radius is more smaller. Our calculated results agree well with the experimental data, and our method can be used to predict the core structure of the dislocation in a bubble raft where bubble-radius is given arbitrarily.     

一个单滑移取向铜单晶体疲劳位错结构的热稳定性研究

利用扫描电镜电子通道衬度(SEM-ECC)技术观察研究了[4 18 41]单滑移取向铜单晶体在不同塑性应变幅下的疲劳饱和位错结构及其在不同温度等时退火条件下的热稳定性. 结果表明, 在退火温度为300 °C时, 疲劳位错结构(如脉络结构、驻留滑移带PSB楼梯结构、PSB胞结构和迷宫结构等)均发生了明显回复. 当退火温度高于500 °C, 上述这些疲劳位错结构基本消失, 均发生了明显的再结晶现象, 并大都伴随有退火孪晶的形成. 分析认为, 再结晶的发生和退火孪晶的出现不仅与退火温度和外加塑性应变幅有关, 还与累积循环塑性应变量有着密切的关系.     

经光阑衍射的平顶涡旋光束位相奇点的演化特性

推导出了平顶涡旋光束通过有光阑ABCD光学系统的传输解析式,并以光阑透镜和矩形光阑系统为例,与平顶光束比较研究了截断参量、相对离轴距离和光束阶数对衍射场中位相奇点演化特性的影响.数值计算表明,平顶涡旋光束通过上述光学系统均存在位相奇点,即使源处涡旋被光阑阻拦时,衍射场中也会出现位相奇点;而平顶光束通过光阑透镜系统存在刃型位错,随着截断参量增大,会发生刃型位错的演化和湮灭现象,且平顶光束通过矩形光阑系统没有发现位相奇点.