磁电弹性体中多条位错与Griffith裂纹

根据本征方程，研究磁电弹性体中若干平行螺型位错与Griffith裂纹的相互作用.结合Muskhelishvili方法和算子理论，得到磁电弹性体中由位错和裂纹所诱导的应力场、电场和磁场的解析解.数值算例表明：在裂纹的端点及位错点上仍然存在应力的奇异性，离位错点越远处广义力越小，结论与已有的结果相符，证明了结论的正确性.当位错点与裂纹端点距离越近时，裂纹与位错间的应力场越小，并逐渐趋近于零.     

Climb via vacancy diffusion of edge dislocations in 2D dislocation microstructures

The prevention of strength degradation of components is one of the great challenges in solid mechanics. In particular, at high temperatures material may deform even at low stresses, a deformation mode known as deformation creep. One of the microstructural mechanisms that governs deformation creep is dislocation motion due to the absorption or emission of vacancies, which results in motion perpendicular to the glide plane, called dislocation climb. However, the importance of the dislocation network for the deformation creep remains far from being understood. In this study, a climb model that accounts for the dislocation network is developed, by solving the diffusion equation for vacancies in a region with a general dislocation distribution. The definition of the sink strength is extended, to account for the contributions of neighbouring dislocations to the climb rate. The model is then applied to dislocation dipoles and dislocation pile-ups, which are dense dislocation structures and it is found that the sink strength of dislocations in a pile-up is reduced since the vacancy field is distributed between the dislocations. Finally, the importance of the results for modelling deformation creep is discussed.     

氢离子辐照纯钒中形成的位错环

钒合金作为聚变堆候选材料, 其辐照损伤行为一直是关注的重点. 研究辐照时形成的位错环的性质, 其意义在于揭示纯钒中辐照空洞的长大机理. 这种机理表现为不同类型位错环对点缺陷吸收的偏压不同, 从而影响金属的辐照肿胀. 本文利用加速器对纯钒薄膜样品进行氢离子辐照, 然后, 利用透射电镜的inside-outside方法分析氢离子辐照所形成的位错环的类型. 结果表明, 在氢离子辐照纯钒中没有发现柏氏矢量b=<110>的位错环, 只有柏氏矢量b=1/2<111>和b=<110>的位错环, 这两种位错环的惯性面处于{110}-{112}之间. 能确定性质的位错环全部为间隙型位错环, 未发现空位型位错环.     

晶体位错尺寸效应的多尺度分析

本文采用准连续介质多尺度方法,分析了面心立方（fcc）晶体铝阶梯孪晶界在不同尺寸情况下（试件尺寸长高比从1：1到8：1）受剪切作用的晶界变形。了解在不同尺寸下,晶界结构位错的成核过程,得到了大试件比值与小试件比值下作用力与应变的关系曲线及不同试件尺寸下应变能的变化曲线。其中随着试件比值的增加,作用力在应变比较小的时候变化情况相似,但当应变达到3％以后,呈现出明显的不同;应变能随试件长高比的增大而减小,各个试件在各自不同的加载阶段,应变能变化趋势同作用力变化趋势相一致。本计算揭示了不同尺寸下阶梯孪晶界在剪切作用下的微观机理,证实其尺寸效应性质。     

Dislocation theory as a 3‐dimensional translation gauge theory

We consider the static elastoplastic theory of dislocations in an elastoplastic material. We use a Yang‐Mills type Lagrangian (the teleparallel equivalent of Hilbert‐Einstein Lagrangian) and some Lagrangians with anisotropic constitutive laws. The translational part of the generalized affine connection is utilized to describe the theory of elastoplasticity in the framework of a translation gauge theory. We obtain a system of Yang‐Mills field equations which express the balance of force and moment.     

Dislocation Structure and Strain Localisation in Nickel Single Crystals Cyclically Deformed at 77 K

An experimentally based investigation is presented of the dislocation structure and of glide effects occurring in single slip oriented nickel crystals cyclically deformed at 77 K until saturation of the stress amplitude. Special attention is paid to a comparison of slip and structure phenomena observed in fatigue tests at 77 K and those found after cycling at room temperature (RT) and elevated temperatures. At strain amplitudes within the plateau region of the cyclic stress‐strain curve, where at higher temperatures in the crystal two structure types co‐exist, at 77 K nearly the entire specimen volume is occupied by one structure “phase”, a dislocation‐“condensed” wall configuration. On different scale levels the main characteristics of this extended wall structure were found to be independent of the imposed amplitude, and they turned out to fit in the temperature dependence of the structure features of the ladder‐like wall phase characterising the zones of intense slip (persistent slip bands) at RT and elevated temperatures. At 77 K the strain is localised in narrow slip bands (SBs) in the same way as at higher temperatures, although there is no indication of a “two‐phase” structure. From the experimental findings it is concluded that WINTERs “two‐phase” model remains valid, when averaging the plastic strain values over all SBs and over a sufficient number of cycles.     

人造金刚石晶体缺陷的同步辐射X射线衍射形貌像浅析

利用同步辐射X射线对人造金刚石晶体缺陷进行了形貌学研究,实验采用了透射(劳埃)形貌术和反射形貌术两种方法.所得的X射线透射劳埃图上大部分斑点分别分布在四条主晶带上,经分析发现,该金刚石晶体主要的晶体缺陷为位错,并推导出晶体内部存在Frank不全位错.该晶体的反射形貌像中位错呈网状分布,说明其表层缺陷多于内部缺陷.此外,由形貌像分析发现该人造金刚石晶体的晶体缺陷明显少于天然金刚石.     

压头不同晶向下纳米压痕的多尺度研究

为了研究压头晶体各向异性对纳米压痕的影响,采用多尺度准连续介质(QC)法模拟了不同晶向Ni压头与Ag薄膜的纳米压痕过程。通过对比不同晶向下压头在薄膜上触发的原子滑移,发现压头的晶向引起的界面失配位错在很大程度上决定薄膜开启初始原子滑移系的难易。然后对比了压头在不同晶向下测得的薄膜纳米硬度,发现其计算值是一样的。最后研究压头表面和压痕表面的正应力和切应力的分布,分析了应力分布与原子滑移系的关系。     

光电探测器组件光纤耦合移位特性分析

光电探测器组件响应度下降会造成光纤陀螺输出异常,响应度下降的主要原因为光纤耦合移位,分析光纤耦合移位的原因并采取有效措施可提高探测器组件的使用可靠性。通过对探测器尾纤出射高斯光斑在探测器管芯端面数学积分,计算出光纤耦合效率系数与光纤耦合间距及光纤偏转角度的关系,计算结果与实际封装探测器组件指标一致。根据计算结果,从光纤移位、探测器管芯移位和管壳形变三个方面分析了耦合移位的影响因素,提出避免探测器使用中发生耦合移位的措施,并通过试验验证了耦合焊接缺陷会造成探测器试验后响应度下降,采取耦合对准控制措施后封装的探测器试验后响应度保持稳定。