FORMATION AND DEVELOPMENT OF TAIHU LAKE AND RECENT DEPOSITION

Situated in the Taihu plain between the mouth of the Changjiang River and theHangzhou Bay, the Taihu Lake is a large shallow-water lake in China with a surface area of 2427.8 km~2.The lake bottom mainly consists of loess-like sediment. Some buried and silted up channels and residual depressions can be found at the bottom and a lot of Neolithic cultural relics on the loess-like sediment. This indicated that the Taihu Lake was formed on the alluvial plain charaterized by widely deposited loess-like sediment because of siltation and stagnancy of water, instead of by development from lagoons as reported in the past.Recent deposition including influent-effluent current accumulation, wind-driven current and storm deposition in this lake occurred mainly in the south, the west shore and the midst of the lake.The sedimentary rate in the east Taihu Lake is about 1.7-1.8 mm/a, whereas in the west Taihu Lake it is about 0.41 ram/a, only 23％ of that of the former.     

STRUCTRE AND PROPERTIES OF COMPOSITE Ni/HARD CARBON FILMS PREPARED BY PLASMA DEPOSITION

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The Reactivity of Cr‐Te Superlattice Reactants and of Co‐deposited Cr‐Te Films: Studies with in‐situ X‐ray Diffractometry

The reactivity of a Cr‐Te multilayer film consisting of 326 Cr/Te double‐layers with about 88(3) at% Te was investigated with in‐situ X‐ray diffraction. The occurrence of a superstructure reflection caused by the multilayer system is observed. During the annealing procedure between 80 and 90 °C the layer‐by‐layer arrangement is destroyed and elemental Te crystallizes. After 6 h isothermal annealing at 140 °C CrTe₃ starts to crystallize. The amount and the crystal size of CrTe₃ increase with raising temperature and Te is consumed during the growth process. At 220 °C the formation of crystalline Cr₂Te₃ is observed and between 220 and 260 °C CrTe₃ is completely decomposed into Cr₂Te₃. The two Cr tellurides grow as highly textured materials. The size of CrTe₃ crystals is significantly larger than that of Cr₂Te₃. For a co‐deposited Cr‐Te film with composition 77(3) at% Te the tri‐telluride and elemental Te crystallize simultaneously. The texture of CrTe₃ is less pronounced and different reflections of the tri‐telluride occur besides the (h00)‐reflections. Up to 160 °C a pronounced increase of the crystallite size is observed and the crystals are significantly larger than those obtained with the multifilm sample. At 130 °C the crystallization kinetics seem to be controlled by nucleation.     

Characterization of the Converging Jet Region in a Triple Torch Plasma Reactor

Enthalpy probe measurements were taken of the converging plasma plume in a triple torch plasma reactor and related to substrate heat flux measurements. Results show excellent entrainment of process gases injected into the converging plasma plume by way of the central injection probe. At lower pressures (40 kPa), the plasma volume is equivalent to at least a 3 cm diameter, 4 cm long cylinder, with relatively uniform temperature, velocity, and substrate heat flux profiles when compared to a typical dc arc jet. Converging plasma plume size, substrate heat flux, and enthalpy profiles are also shown to be a strong function of applied system power. Substrate heat flux measurements show smaller radial gradients than enthalpy probe measurements, because of the high radial velocity component of gases above the substrate boundary layer. Enthalpy probe measurements were also conducted for diamond deposition conditions and approximate temperature and velocity profiles obtained. Problems with the uniform gas mixture assumption prohibited more accurate measurements. Reproducibility of enthalpy measurement results was shown with an average standard deviation of 11.8% for the velocity and 7.6% for the temperature measurements.     

甲醇在欠电位沉积Ru修饰Pt电极上的催化氧化

采用欠电位沉积(upd)方法在Pt 表面沉积亚单层的Ru制备出upd-Ru/Pt 电极. 通过欠电位沉积前后电极在0.5 mol·L-1 H2SO4溶液中循环伏安图-152 - 128 mV(vs Ag/AgCl)电位范围内对氢区的数值积分确定Pt表面Ru 的覆盖度. 用电化学方法测试了甲醇在upd-Ru/Pt电极上的催化氧化, 并讨论分析了欠电位沉积电位和Ru的表面覆盖度对甲醇氧化的影响. 结果表明, Ru能够欠电位沉积到Pt表面. Pt表面欠电位沉积少量的Ru 即能大大促进甲醇的氧化.只要控制upd-Ru的沉积量, upd-Ru原子就能大大促进甲醇氧化而与沉积电位无关. Ru原子对甲醇氧化的促进作用与Ru和Pt是否形成合金无关, 而取决于Ru 在Pt表面的百分含量.     

Characteristics of Subtractive Anodic Stripping Voltammetry of Lead,Cadmium and Thallium at Silver‐Gold Alloy Electrodes

Silver‐gold alloy electrodes have been studied for the purpose of the quantitative determination of heavy metals by subtractive anodic stripping voltammetry, (SASV). The results have been compared with those obtained with the silver and gold electrodes. The 50/50 a/o Ag/Au alloy electrode is the most suitable for quantifying thallium in the presence of lead and cadmium. The separation of its peak from those of lead and cadmium is 200 mV, which is about twice the separation obtained on the pure metal electrodes and is also better than on mercury. The silver electrode is suitable for the simultaneous determination of thallium, lead and cadmium. The peaks of lead and cadmium overlap on the 50/50 alloy. Pure silver or pure gold can be used for simultaneous quantification of these two metals. The use of gold for quantifying lead and cadmium is more limited because the peak potential of cadmium is shifted in the negative direction as its concentration increases and at [Cd²⁺]>200 nM, the two peaks merge. SASV enables correction for background currents and is of utmost importance for obtaining well‐defined peaks. The peaks of lead, cadmium and thallium appear over a relatively narrow potential range (ca. 200 mV) on all the electrodes presented in this work. For this reason, the quantifying of a peak is based on the derivative at the inflection point of only one of its branches (ascending or descending). All SASV measurements were carried out without removal of oxygen.     

Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Plasma-chemical reduction of SiCl₄ in mixtures with H₂ and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H₂ ratio strongly affects the plasma composition as well as the deposition (r _D) and etch (r _E) rates of Si: H, Cl films and that the electron impact dissociation is the most important channel for the production of SiCl_x species, which are the precursors of the film growth. Chemisorption of SiCl_x and the reactive surface reaction SiCl_x+H–SiCl_(x–1)0+HCl are important steps in the deposition process. The suggested deposition model givesr _D [SiCl_x][H], in agreement with the experimental data. Etching of Si: H, Cl films occurs at high Ar: H₂ ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.     

Cathodic deposition of ternary In+As+Sb alloys and formation of InAsxSb1−x

In+As+Sb alloys have been deposited onto Ni and Ti cathodes from tartaric acid solutions at pH 2. Homogeneous deposits of composition suitable for achieving InAs_xSb_1−x can be obtained from this medium. The As-to-Sb ratio can be controlled by properly selecting solution composition and deposition potential.X-ray photoelectron spectroscopy and X-ray diffraction analyses show that formation of III–V compounds occurs at room temperature. In reacts preferentially with As rather than with Sb, but crystalline phases formed at room temperature are Sb-rich. After annealing the In+As+Sb alloys at 250°C, the composition calculated from cell parameters appears similar to that measured by energy-dispersive X-ray analysis, suggesting that the entire deposit has been converted into the InAs_xSb_1−x crystalline phase.     

Chemical deposition of semiconducting cadmium selenide quantum dots in thin film form and investigation of their optical and electrical properties

Cadmium selenide quantum dots with cubic crystal structure are chemically deposited in thin film form using selenosulfate as a precursor for selenide ions and ammonia buffer with double role: as a ligand and as a pH value controller. The optical band gap energies of as-deposited and thermally treated cadmium selenide thin films, calculated within the framework of parabolic approximation for the dispersion relation, on the basis of equations which arise from the Fermi's golden rule for electronic transitions from valence to conduction band, are 2.08 and 1.77 eV, correspondingly. The blue shift of band gap energy of 0.34 eV for as-deposited thin films with respect to the bulk value is due to the quantum size effects (i.e., nanocrystals behave as quantum dots) and this finding is in agreement with the theoretical predictions. During the thermal treatment the nanocrystals are sintered, the increase of crystal size being in correlation with the decrease of band gap energy. The annealed thin films are practically non-quantized. From the resistance-temperature measurements, on the basis of the dependence of ln(R/Ω) vs 1/T in the region of intrinsic conduction, the thermal band gap energy (at 0 K) of 1.85 eV was calculated.     

Investigation of nucleation processes under the influence of magnetic fields

The present work demonstrates the possibilities and the limits of the in situ electrochemical scanning tunneling microscopy for investigation of nucleation processes in magnetic fields on the examples of Cu and Co electrodeposition onto Au(111) electrodes from sulfate electrolytes with pH 3. Cyclic voltammograms of Cu in the underpotential range (UPD) exhibit no significant change in the cathodic and anodic peaks recorded in magnetic fields parallel to the surface. In magnetic fields of a permanent magnet, the reconstruction of Au has been annihilated during UPD of Cu. In the overpotential range, the dissolution of Cu is inhibited. This triggers the formation of a Cu–Au surface alloy. The UPD deposition of Co onto Au(111) could be proven without magnetic field, which leads to the formation of two monolayers. The nucleation in an applied field could not be observed due to higher induced fluctuations and microconvective effects. Contribution to special issue “Magnetic field effects in Electrochemistry”.