微合金化元素对Fe—A1界面结合的第一性原理研究

利用第一性原理中的DFT理论研究了Fe／A1界面的能量学和电子结构，讨论了替位型掺杂的元素Zn、Mn、Ni在Fe／A1界面处的作用．结果表明：元素Zn、Mn、Ni都会优先替换界面处的Fe原子，使得界面结合能增加，体系更稳定，有利于界面的结合；跨界面的Fe原子与Al原子之间的电荷布居、键长以及差分电荷密度图的计算表明：掺杂后有利于跨界面的Fe-Al间成键，从而加强了Al层与Fe基体的结合，且结合强度由强到弱依次为：掺Zn〉掺Mn〉掺Ni；与实验比较吻合．最后对掺杂Zn的增韧机理加以解释．     

Average kinetic energy of ions ejected from pure Coulomb explosions of methane clusters

We use an electrostatic model to study the average kinetic energy of ions ejected from the pure Coulomb explosions of methane clusters (CA4)n (light atom A=H and D). It is found that the ratio of the average kinetic energy of the ions to their initial average electrostatic potential energy is irrelevant to the cluster size. This finding implies that as long as the ratio is given, the average kinetic energies of the ions can be simply estimated from their initial average electrostatic potential energies, rather than from the time- consuming simulations. The ratios for the different charge states of carbon ions are presented.     

压力膨化处理对正极性聚丙烯蜂窝膜的驻极体性质的影响

压力膨化处理工艺能够显著改善聚丙烯蜂窝薄膜（cellular polypropylene） 驻极体的压 电活性.通过热脉冲技术、表面电位衰减测量及TSD 电流谱分析等研究了经恒压正电晕充电 的聚丙烯蜂窝膜的陷阱能级分布特征，讨论了压力膨化处理工艺对这类蜂窝膜驻极体电荷稳 定性及电荷输运特性的影响.结果说明，PP 蜂窝膜内存在着位于中能级区的能值各异的三种 分立陷阱，深能值陷阱和浅能值陷阱的大多数位于孔洞膜近表面的体层或体内，而中等能值 陷阱则主要位于自由面附近.压力膨化处理改变了PP 蜂窝膜的能阱状态并在一定程度上降低 了这类孔洞膜驻极体的电荷储存稳定性，但没有明显影响其由慢再俘获效应占主导地位的脱 阱电荷输运特性. 关键词： 压力膨化处理 聚丙烯蜂窝膜 驻极体 电荷储存与陷阱分布 电荷输运     

表面传导电子发射显示器件电场分布的理论研究

利用电磁理论对表面传导电子发射显示器件的单个子像素在笛卡尔坐标系内建立合理的电学物理模型，对内部电场强度和电势进行了深入研究，推导出了模型不同部分的面电荷密度、电场强度和电势的表达式.为了形象地表征其电学特性，利用MATLAB 6.5对电场强度和电势的分布情况进行了模拟，从理论上对模拟曲面给出了合理的解释，分析了子像素内部电子的发射机理和电学行为，并与电子多重散射模型和惯性离心模型进行了对比，解释了SED阳极电流形成的重要原因.在误差允许的范围内，本模型有关电场强度分布的结论与惯性离心模型一致. 关键词： 表面传导电子发射显示 遂穿效应 面电荷密度 电场强度     

使用曲面微通道板和感应电荷位置灵敏阳极的软X射线-极紫外光子计数成像探测器研究

本项目对我国空间探测的极紫外(EUV)波段大视场相机所需求的球面光子计数成像探测器的关键技术进行了研究。首先,建立了光阴极材料次级电子产出模型,利用该模型计算了软X射线-EUV波段常用的光电阴极材料—碱卤化物的次级电子产出,分析了微通道板(MCP)的次级电子产出。建立了测量MCP量子探测效率的装置,并推导出MCP量子探测效率的计算公式,测量了MCP在软X射线-EUV波段的量子效率以及MCP量子效率随掠入射角的变化。其次,建立了球面实芯微通道板的制备装置,利用高温热成型方法制备出曲率半径为150 mm球面MCP,利用光刻技术制备出有效直径为48 mm的楔条形感应电荷位置灵敏阳极,在此基础上集成了一套使用球面MCP和感应电荷位置灵敏阳极的两维光子计数成像探测器。再次,研制出包括快速前端模拟电路与后续数字电路的成像读出电路,编制了能矫正图像畸变的图像实时采集和处理软件。最后,建立了MCP探测器空间分辨率、图像线性的检测装置,对研制出的探测器性能进行了检测,检测结果表明:探测器的各项技术指标完全满足要求。     

Like‐Charge Attraction: A Combined Electrostatic–Hydrodynamic Approach

Abstract

This article discusses the like‐charge attraction of colloidal spheres close to a charged plate and compares results produced by an electrostatic and a hydrodynamic model with experimental data. Hydrodynamic coupling is shown to be the dominating effect, while the electrostatic influence may often be neglected. Some observations, however, can be explained only by means of a combined electrostatic–hydrodynamic model, which is derived in this work. The combined model is able to predict not only the attractive force between particles of similar charge close to a charged plate but also the change to a purely repulsive force once the sphere‐plate distance is further reduced. This prediction matches qualitatively results of experiments reported in the literature.     

Li-defect interactions in electron-irradiated n-type silicon by EPR measurements

Single crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ～10¹⁷/cm², irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li-one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spinof ½. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40 °K followed by annealing at higher temperatures show that both EPR defects described above begin to form at about 200 °K and begin to decrease at about 275 °K-just as does the 250 °K reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) complex in O-containing Si, and a (Li-interstitial) complex in O-free Si.     

Synthesis and characterization of thermally crosslinkable hole‐transporting polymers for PLEDs

Two new thermally crosslinkable hole‐transporting polymers, X‐PTPA and X‐PCz, were synthesized via Yamamoto coupling reactions. The number‐averaged molecular weights (M_n) of X‐PTPA and X‐PCz were found to be 45,000 and 48,000, respectively, and therewith, polydispersity indices were of 1.8 and 1.7, respectively. Thermally crosslinked X‐PTPA and X‐PCz exhibit excellent solvent resistance and stable optoelectronic properties. The UV–visible maximum absorption peaks of X‐PTPA and X‐PCz in the thin film state are at 389 and 322 nm, respectively. The HOMO levels of X‐PTPA and X‐PCz are estimated to be ?5.27 and ?5.39 eV, respectively. Multilayered devices (ITO/crosslinked X‐PTPA or X‐PCz/SY‐PPV/LiF/Al) were fabricated with SY (SuperYellow) as the emitting layer. The maximum efficiency of the multilayered device with a crosslinked X‐PTPA layer is approximately three times higher than that of the device without a crosslinked X‐PTPA layer and much higher than that of the crosslinked X‐PCz device. This result can be explained by the observations that crosslinked X‐PTPA produces increased electron accumulation within the emitter, SY, and also efficient exciton formation due to improved charge balance. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013 , 51, 5111–5117     

黄芩素激发态分子内质子转移耦合电荷转移反应的实验和理论研究

通过稳态光谱实验和量子化学计算相结合,研究了黄芩素激发态质子转移耦合电荷转移的反应. 实验和计算中S₁态吸收峰的缺失表明S₁态是暗态. S₁暗态导致在实验中观察不到黄芩素在乙醇溶液中的荧光峰,且固体的荧光峰很弱. 黄芩素分子的前线分子轨道和电荷差异密度表明S₁态是电荷转移态,然而S₂态是局域激发态. 计算的黄芩素分子的势能曲线在激发态只有一个稳定点,这表明了黄芩素激发态分子内质子转移的过程是一个无     

电荷耦合器件的γ辐照剂量率效应研究

对电荷耦合器件进行了不同剂量率的γ辐照实验,通过多种参数的测试探讨了剂量率与电荷耦合器件性能退化的关系,并对损伤的物理机理进行分析。辐照和退火结果表明:暗信号和暗信号非均匀性是γ辐照的敏感参数,电荷转移效率和饱和输出电压随剂量累积有缓慢下降的趋势;暗场像素灰度值整体抬升,像元之间的差异显著增加;电荷耦合器件的暗信号增量与剂量率呈负相关性,器件存在潜在的低剂量率损伤增强效应。分析认为,剂量率效应是由界面态和氧化物陷阱电荷竞争导致的。通过电子-空穴对复合模型、质子输运模型和界面态形成对机理进行了解释。