Mass transport in metals under intensive impulse reactions

An unusually high mobility of atoms under intensive impulse reactions is explained by the behavior of point defects at the shock wave front. It is shown that either a shock wave front or moving dislocations can capture the interstitials, or they can be thermally activated in the direction of the shock wave propagation.     

Closed-form solutions for a rectangular layer with central crack under anti-plane shear stress

We consider the problem of determining the stress distributionin a finite rectangular elastic layer containing a Griffithcrack which is opened by internal shear stress acting alongthe length of the crack. The mode III crack is assumed to belocated in the middle plane of the rectangular layer. The followingtwo problems are considered: (A) the central crack is perpendicularto the two fixed lateral surfaces and parallel to the othertwo stress-free surfaces; (B) all the lateral surfaces of therectangular layer are clamped and the central crack is parallelto the two lateral surfaces. By using Fourier transformations,we reduce the solution of each problem to the solution of dualintegral equations with sine kernels and a weight function whichare solved exactly. Finally, we derive closed-form expressionsfor the stress intensity factor at the tip of the crack andthe numerical values for the stress intensity factor at theedges of the cracks are presented in the form of tables.     

The study of the influence of uniaxial stress on impurity complexes in silicon

The influence of external uniaxial stress on the different indium-donor complexes in silicon has been studied using the perturbed γ –γ angular correlation (PAC) method. Such effect of an applied stress is detected by means of the probe atoms situated at different complexes in the sample. The current results showed that the responses of the probes in an extrinsic silicon samples are found to be dissimilar for the same value of stress. Such change in the local environments of the probe atoms could be associated with the various strain field created by the implantations of varied size of impurities. The phosphorous implantation in silicon has even lead to the complete absence of observable effect of the applied stress suggesting significant lose of the elasticity of the sample.     

Intramolecular energy transferable (2,2‐diphenylvinyl)phenyl substituted poly(p‐phenylenevinylene) derivative with efficient photoluminescence and electroluminescence

A poly(p‐phenylenevinylene) (PPV) derivative containing a bulky (2,2‐diphenylvinyl)phenyl group in the side chain, EHDVP‐PPV, was synthesized by Gilch route. The reduced tolane‐bisbenzyl (TBB) defects, as well as the structure of the polymer, was confirmed by various spectroscopic methods. The intramolecular energy transfer from the (2,2‐diphenylvinyl)phenyl side group to the PPV backbone was studied by UV‐vis and photoluminescence (PL) of the obtained polymer and model compound. The polymer film showed maximum absorption and emission peaks at 454 and 546 nm, respectively, and high PL efficiency of 57%. A yellow electroluminescence (λ_max = 548 nm) was obtained with intensities of 6479 cd/m² when the light‐emitting diodes of ITO/PEDOT/EHDVP‐PPV/LiF/Al were fabricated. The maximum power efficiency of the devices was 0.729 lm/W with a turn‐on voltage of 3.6 V. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 5636–5646, 2004     

Localized bifurcations and defect instabilities in the convection of a nematic liquid crystal

The stationary and the time-dependent homogeneous ordered states in convection may both become unstable against localized perturbations. Defects are then created and they may contribute to the disorganization of the homogeneous state. We present an experimental study of defects in some homogeneous stationary structures as well as in the traveling-wave states of convection of a nematic liquid crystal. We show that the core of the defects is a germ of the unstable state and it can become unstable under the external stress. Then, either fully homogeneous states with the symmetry of the core, or complex disordered states can develop from the local instability of defects in processes quite similar to displacive transitions in solids. Some of the main features are qualitatively similar to numerical simulations of an appropriate Landau-Ginzburg equation.     

Shape sensitivity of a plane crack front

The 3D‐elasticity model of a solid with a plane crack under the stress‐free boundary conditions at the crack is considered. We investigate variations of a solution and of energy functionals with respect to perturbations of the crack front in the plane. The corresponding expansions at least up to the second‐order terms are obtained. The strong derivatives of the solution are constructed as an iterative solution of the same elasticity problem with specified right‐hand sides. Using the expansion of the potential and surface energy, we consider an approximate quadratic form for local shape optimization of the crack front defined by the Griffith criterion. To specify its properties, a procedure of discrete optimization is proposed, which reduces to a matrix variational inequality. At least for a small load we prove its solvability and find a quasi‐static model of the crack growth depending on the loading parameter. Copyright © 2003 John Wiley & Sons, Ltd.     

Influence of annealing and chain defects on the melting behaviour of poly(vinylidene fluoride)

The melting behaviour of poly(vinylidene fluoride) (PVDF) was investigated by differential scanning calorimetry (DSC) and small- and wide-angle X-ray scattering in order to study the influence of the chain defects content and of the temperature of annealing on the crystallization and melting behaviour.All the DSC scans show a double endotherm and the analysis of the data suggests that the low temperature endotherm is due to the melting of a population of thin lamellae, whose thickness increases during the annealing, but a high content of chain defects prevents the lamellar thickening and the main effect in this case is the crystallization of thin lamellae from a portion of polymer which did not crystallize during the quenching from the melt. Furthermore, the two melting endotherms, which are observed, can be partially ascribed to a melting-recrystallization process.Furthermore, stepwise isothermal cooling was performed in a differential scanning calorimeter followed by melting scans of fractionated PVDF samples to point out the possible presence of a series of endothermic peaks.     

Anti-Stokes Bands of Intrinsic Radiation in Undoped GaAs Crystals

It has been established that undoped gallium crystals exhibit anti-Stokes radiation with energy corresponding to the interband recombination of these crystals. Its appearance is most probably determined by EL2 defects, and its intensity depends on the product of the cross sections for photoionization of electrons and the holes from these defects.     

Microstructure Evolution in Laser RS Co-base Metastable Alloy

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Cathodoluminescence study of extended defects in hydrothermal ZnO crystals

Understanding the luminescence of ZnO is very important for some applications. In spite of the many studies carried out, there are still some points concerning the origin of some of the luminescence emissions in ZnO crystals that require additional study; in particular, the role of extended defects remains to be a matter of controversy. We present here a cathodoluminescence analysis of the defects generated by Vickers indentation in hydrothermal HTT crystals. Special emphasis was paid to the luminescence band peaking around 3.3 eV. The origin of this band is a matter of controversy, since it has been related to different causes, extended defects being one of the candidates for this emission. The CL images were acquired around crystal defects. It is observed that the 3.3 eV emission is enhanced around the crystal defects; though it is also observed, but weaker, out of the defect regions, which suggests that there exist two luminescence emissions peaking very close to 3.3 eV. The two emissions, one related to structural defects and the other to the LO phonon replica of the free excitonic band, appear very close each other and their relative intensity should determine the shape of the spectrum.