范德堡方法在ZnO薄膜测试中的应用

近年来,随着对宽禁带半导体材料,氧化锌薄膜研究的快速发展,对其电学性质的研究也显得尤为重要。主要介绍范德堡方法在ZnO薄膜电学性质测量中的应用,并对初步测量结果作简要的讨论。     

基于粗糙度曲线统计特征的接触热阻模型

本文在对粗糙度曲线统计特征分析的基础上,提出了一种接触热阻的计算模型。分别采用四种接触峰的评定标准,对实际机械加工表面的接触热阻进行了计算。研究结果表明,评定标准的选取直接影响接触热阻的计算结果;在同一接触峰评定标准下,两块平均粗糙度值相差较大的表面,其接触热阻计算值的离散区域也有可能重叠。所以,在计算接触热阻时,仅仅使用一两个平均化的粗糙度统计参数来表征整个表面的形貌特征是不够的。     

光子晶体光纤在熔接夹具中的受力分析

运用接触力学和圆环压溃强度理论对由V型槽固定的光子晶体光纤进行了受力分析。分别考虑了两种极限情况,以推导光纤中的应力分布。第一种情况假设光纤是完全由纯石英材料制成的内部均匀的实芯圆柱体;第二种情况是把光纤假设成一个空芯圆柱体。根据这两种极限情况推导出了光子晶体光纤受力后光纤内部的最大应力点位于平行于接触面的外层空气孔的附近。采用有限元方法验证了此结论,计算出了光子晶体光纤可能承受的最大压力,并给出了光子晶体光纤在V型槽中的应力分布和变形情况。     

基于平底孔反射体的双晶直探头测量模型

双晶探头在无损检测领域有着重要的应用,因而有必要建立一个超声测量模型来深入了解这类换能器的特点.通过将一个基于传递矩阵的多高斯声束模型和一个基尔霍夫近似方法获得的散射模型有效结合,建立了一个完整的纵波双晶直探头测量模型,用于预测平底孔缺陷体的回波信号.对比分析了平底孔反射回波信号的模型计算结果与实验测量结果,验证了该测量模型的准确性. 关键词： 超声测量模型 双晶直探头 多高斯声束模型     

Surface modification of polyamide 12 angioplasty balloons by photochemical reaction with an aromatic azide

Polyamide 12 (PA12) is used in a variety of applications when low moisture absorption, good dimensional stability, and toughness are required. Polyamide 12 is one of the polymers most frequently employed to fabricate angioplasty balloon catheters; however, its high hydrophobicity and chemical inertness require the application of coatings to make its surface more hydrophilic and biocompatible. In this work, an alternative method, based on the photochemical reaction of PA12 with a hydrophilic aromatic azide, was developed. Static and dynamic contact angle measurements evidenced that the surface modification process was able to improve PA12 wettability and that the effects were retained even after 12 months from surface treatment. Polyamide 12 modification resulted in an increase of its surface free energy, as evaluated by the van Oss, Good, and Chaudhury method. X‐ray photoelectron spectroscopy confirmed the presence of the aromatic azide on PA12 surface. Finally, compliance tests showed that the modification process did not reduce the mechanical performance of balloons.     

Interface effect between blue phosphorus and metals

The contacted properties of metal substrates with single layer (monolayer) blue phosphorus are calculated by first principles. We analyze the charge transfer, atomic orbital overlap, electronic properties and potential barrier at the interface of metal contacted blue phosphorene (BuleP) to understand how to effectively inject electrons from the metal into the contacted blue phosphorus. We inquire into interfacial effect of blue phosphorene directly in contact with five representative metallic substrates – Au (111), Ag(111), Al(111), Co(111) and Sc(0001), which are having minimal lattice mismatch with the BlueP. We find that the contact properties of these five metals are ohmic contact and schottky contact. Of the five different contact metals, Co-BlueP heterojunction has the best electrical conductivity. The lower SBH in the Al contact can also lead to a good substrate for a Schottky contact for the heterojunction. These results can provide guidance for the future design of BlueP-based electronic devices and for the exploration of new low-dimensional semiconductor transport processes.     

金属Al背电极二维AZO光栅的制备和陷光特性

研究了背电极金属Al膜上二维ZnO:Al光栅的制备及其反射光谱特性.在厚度为300 nm的Al膜上溅射80 nm ZnO:Al薄膜,旋涂AZ5206光刻胶,用波长为325 nm的激光进行光刻制作光栅掩模.采用溶脱-剥离法在Al衬底上制备周期(624~1250 nm)和槽深(100~300 nm)可独立调控的ZnO:Al二维光栅.表面形貌采用原子力显微镜和扫描电镜观察,反射光谱用带积分球的分光光度计测试,双向反射分布函数用散射仪测量.结果表明,300 nm Al膜上织构二维ZnO:Al光栅背电极结构,当光栅槽深为228 nm,周期从624 nm增加到986 nm时,背电极总反射率、漫反射率以及雾度均随光栅周期增大而显著增加,而当周期从986 nm增加到1250 nm时,总反射率、漫反射率以及雾度略有增加.双向反射分布函数测试结果进一步证实了上述实验结果,即随着周期增大,漫反射峰值越大,衍射峰个数也增多.提示背反电极上槽深为228 nm、周期为986 nm的二维ZnO:Al光栅具有较好的散射效果,其中漫反射占总反射的百分比为45%.     

Local atomic and electronic structure in the LiVPO4(F,O) tavorite-type materials from solid-state NMR combined with DFT calculations

⁷Li, ³¹P, and ¹⁹F solid-state nuclear magnetic resonance (NMR) spectroscopy was used to investigate the local arrangement of oxygen and fluorine in LiVPO₄F_1-yO_y materials, interesting as positive electrode materials for Li-ion batteries. From the evolution of the 1D spectra versus y, 2D ⁷Li radiofrequency-driven recoupling (RFDR) experiments combined, and a tentative signal assignment based on density functional theory (DFT) calculations, it appears that F and O are not randomly dispersed on the bridging X position between two X–VO₄–X octahedra (X = O or F) but tend to segregate at a local scale. Using DFT calculations, we analyzed the impact of the different local environments on the local electronic structure. Depending on the nature of the VO₄X₂ environments, vanadium ions are either in the +III or in the +IV oxidation state and can exhibit different distributions of their unpaired electron(s) on the d orbitals. Based on those different local electronic structures and on the computed Fermi contact shifts, we discuss the impact on the spin transfer mechanism on adjacent nuclei and propose tentative signal assignments. The O/F clustering tendency is discussed in relation with the formation of short V^IVO vanadyl bonds with a very specific electronic structure and possible cooperative effect along the chain.     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.     

Certain condition on the second fundamental form of CR submanifolds of maximal CR dimension of complex Euclidean space

We treat m-dimensional real submanifolds M of complex space forms ̿M when the maximal holomorphic tangent subspace is (m−1)-dimensional. On these manifolds there exists an almost contact structure F which is naturally induced from the ambient space and in this paper we study the condition h(FX,Y)−h(X,FY) = g(FX,Y)η, η∊ T⊥(M), on the structure F and on the second fundamental form h of these submanifolds. Especially when the ambient space ̿M is a complex Euclidean space, we obtain a complete classification of submanifolds M which satisfy these conditions.Mathematics Subject Classifications (2000): 53C15, 53C40, 53B20.