Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a ⁶⁰Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ～250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ～300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.     

新型高效太阳能电池研究进展

第三代太阳能电池以超高效率、薄膜化、低成本为主要目标,目前发展起来的有多结叠层太阳能电池、中间带太阳能电池、多激子产生太阳能电池、热载流子太阳能电池和热光伏太阳能电池等.文章简要介绍了以上几种新型太阳能电池的工作原理和最新进展,并对其发展前景作了分析和预测.     

液体火箭发动机中声腔抑制不稳定燃烧的声学分析

发展了声腔的分析和数值模型,对液体火箭发动机不稳定燃烧的抑制作用进行了评定,通过迭代计算研究了二维流动和温度分布变化对声腔调 谐和稳定性能的影响,对不同的声腔几何尺寸和温度梯度的稳定性计算结果表明,燃烧带有较大开口面积的声腔会更大程度地改变振荡的空间分布,这种改变而且影响了驱动和抑制燃烧的机理,讨论了在声腔设计安排中正确选择声腔的几何尺寸,且比较了不同长度和不同直径声腔的阻尼特性,通过考察声吸收系统的方法来最优化系统的阻尼,得到了可供设计参考的结论。     

用于干涉型光纤传感器的相位生成载波解调技术

相位生成载波技术是用于光纤传感器中很重要的一种信号解调方法。简要说明了相位生成载波调制的原理和两种基本的调制方法 ,着重介绍了相位生成载波调制信号的解调方法 ,包括 :零差法、伪外差法和合成外差法 ,并对以上各种方法进行了分析比较。对相位生成载波技术在干涉型光纤传感器中的应用作了详细的介绍。针对现在最有希望用于智能结构的光纤布拉格光栅传感器 ,介绍了相位生成载波技术在这方面的应用。     

Radiometric observations of the 752.033-GHz rotational absorption line of H2O from a laboratory jet

The intensity and lineshape of the Doppler-broadened 752.033-GHz (2₁₁ 2₀₂) rotational transition of H₂O has been studied passively using a high-resolution two-stage heterodyne radiometer with single-sideband system noise temperature of 45,000 K. The purpose of the experiments was to demonstrate the observability at submillimeter wavelengths of a high-altitude rocket plume simulated by a laboratory H₂O jet in a vacuum chamber. First-stage mixing was accomplished by means of a GaAs Schottky diode with first local-oscillator power supplied by a CO₂-laser pumped formic-acid laser (761.61 GHz), generating and X-band IF signal. Second localoscillator power was provided by a tunable C-band source. One-MHz resolution capability was obtained by means of a 3-GHz waveguide cavity filter with only 9-dB insertion loss. In the H₂O jet experiments, the center frequency of the line was determined to within 1 MHz of the previously reported value. A rotational temperature 75 K, a linewidth 5 MHz, and a Doppler shift 3 MHz (from a 45-degree rotation of the flow direction) were measured with the line-of-sight intersecting the jet axis at a distance downstream of 30 nozzle diameters. These absorption data were ogtained against continuum background radiation sources at temperatures of 1175 and 300 K.     

有机半导体的物理掺杂理论

基于最低未被占据分子轨道（LUMO）和最高被占据分子轨道（HOMO）的高斯态密度分布与载流子在允许量子态中的费米-狄拉克（Fermi-Dirac）分布,提出有机半导体中物理掺杂的理论模型;研究了掺杂浓度、温度和禁带宽度对载流子浓度的影响,并与一些报道的实验结果做了比较.研究发现无论是否掺杂,温度升高时,有机半导体中的载流子浓度都会增大,并且随温度倒数的线性减小而指数增大;对于本征有机半导体,载流子浓度随禁带宽度的增大而指数下降,随高斯分布宽度的平方指数增加;对杂质和主体不同能级关系的掺杂情形下掺杂浓度对载 关键词： 有机半导体 掺杂 高斯态密度 载流子浓度     

Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

基于混合空穴注入层的湿法制备高效蓝光热激活延迟有机发光二极管

在溶液法制备有机电致发光器件(OLEDs)的研究中, PEDOT∶PSS由于具有较好的成膜性与高透光性而常被用作器件的空穴注入层。但相关研究表明, PEDOT∶PSS本身稳定性较差以及功函数较低,这使得溶液法制备OLEDs的性能差且不稳定。蓝色作为全彩色的三基色之一,制备高效的蓝光器件对于实现高质量显示器件和固态照明装置必不可少。而目前溶液法制备蓝光OLEDs的器件效率普遍较差,针对此问题,本文利用传统的蓝光热激活延迟荧光发光(TADF)材料DMAC-DPS作为发光层,用溶液法制备了蓝光TADF OLEDs,通过在PEDOT∶PSS中掺杂PSS-Na制备混合空穴注入层(mix-HIL)来提高空穴注入层的功函数,研究其对于蓝光TADF OLEDs器件性能的影响。首先在PEDOT∶PSS水溶液中掺入不同体积的PSS-Na溶液,在相同条件下旋涂制膜,进行器件制备。通过观测各个实验组器件的电致发光(EL)光谱,发现掺入PSS-Na后器件EL谱存在光谱蓝移的现象,这是由于掺入PSS-Na水溶液后, mix-HIL层的厚度有所降低,使得在微腔效应作用下, EL光谱发生蓝移。通过对比各组器件的电流密度-电压-亮度(J-V-L)曲线及其计算所得器件的电流效率,结果显示随着PSS-Na的掺入,器件的亮度和电流都有所增大,器件的电流效率也得到了提升,当掺杂比例为0.5∶0.5(PEDOT∶PSS/PSS-Na)时提升幅度最大(亮度提升86.7%,电流效率提升34.3%)。通过在瞬态电致发光测试过程中施加或撤去驱动电压观测了器件EL强度的变化,分析了在混合空穴注入层/发光层(mix-HIL/EML)界面处的电荷积累情况。实验证明,通过在PEDOT∶PSS中掺杂PSS-Na制备mix-HIL获得了蓝光TADF OLEDs器件性能的提升,这是一个获得高效率溶液法制备OLEDs的可行方法。     

水火箭的制作与发射——初中物理教学课外活动拓展

物理课外实验能让学生真正动手操作、体验,从而提高学生的物理核心素养.水火箭的制作与发射,蕴含知识面广,发射效果震撼,能让学生对物理与科技的联系有直观深刻的认识.