Quadrupole interactions at 57Fe and 119Sn in 3d-metal antimonides

3d-metal antimonides: Fe_1+x Sb, N_+x Sb, Co_+x Sb and the (Ni_1?y Fe _y )Sb solid solution have been studied by the Mössbauer effect method at ⁵⁷Fe and ¹¹⁹Sn. It was found that the quadrupole interactions at the Fe and Sn nucleus in 3d-metal antimonides are very sensitive to the filling of different crystallographic sites with metal atoms. The metal atoms in trigonal-bipyramidal sites have a strong effect on the quadrupole splitting of ¹¹⁹Sn. They are nearest to anions (Sb or Sn) with the typical axial ratio of c/a = 1.25. The QS(x) dependence of ¹¹⁹ Sn in 3d-metal antimonides in the 0 ≤ x ≤ 0.1 concentration range can be used to determine x – the concentration of transition metal excess relative to the stoichiometric composition.     

High power diode single-end-pumped Nd:YVO4 laser

A fiber-coupled diode-single-end-pumped Nd:YVO₄ laser with an Nd:YVO₄ crystal of 0.3 at% doping concentration and 3×3×10 mm³ dimensions was reported. 14.850 W of continuous-wave output power in an M² factor of 1.12 was obtained under pump power of 27.365 W, with an optical conversion efficiency of 60.49%, and a slope efficiency of 64.5%.     

有界对称域上的Dp乘子

设Ω是Cⁿ中包含原点的有界对称域。本文在Ω上得到了关于D^p空间的两个乘子定理。     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

Concentration factors for functions with harmonic bounded mean variation

We discuss determination of jumps for functions with generalized bounded variation. The questions are motivated by A. Gelb and E. Tadmor [1], F. Móricz [5] and [6] and Q. L. Shi and X. L. Shi [7]. Corollary 1 improves the results proved in B. I. Golubov [2] and G. Kvernadze [3]. Supported by NSFC 10671062.     

Concentration inequalities for random fields via coupling

We present a new and simple approach to concentration inequalities in the context of dependent random processes and random fields. Our method is based on coupling and does not use information inequalities. In case one has a uniform control on the coupling, one obtains exponential concentration inequalities. If such a uniform control is no more possible, then one obtains polynomial or stretched-exponential concentration inequalities. Our abstract results apply to Gibbs random fields, both at high and low temperatures and in particular to the low-temperature Ising model which is a concrete example of non-uniformity of the coupling.      

关于两类重要微分不等式

本文研究了两类重要微分不等式有界解的性质。引入了赋范线性空间(f,‖‖M),利用比较定理和黎卡提方程解的性质,给出了有界解的上界估计式,推广和改进了文[1,2]中的有关结果.     

某类线性系统的指数型二分性和概周期解及有界解的存在性

得到εdx/dt=A(t)x的扰动系统具有指数型二分性一个充分条件，作为应用得到其扰动系统概周期解及有界解的存在性，推广了[1,2,3]的结果。     

Concentration for self‐bounding functions and an inequality of Talagrand

We see that the entropy method yields strong concentration results for general self‐bounding functions of independent random variables. These give an improvement of a concentration result of Talagrand much used in discrete mathematics. © 2006 Wiley Periodicals, Inc. Random Struct. Alg., 2006